A power amplification module includes: a first bipolar transistor in which a radio frequency signal is input to a base and an amplified signal is output from a collector; a second bipolar transistor that is thermally coupled with the first bipolar transistor and that imitates operation of the first bipolar transistor; a third bipolar transistor in which a first control voltage is supplied to a base and a first bias current is output from an emitter; a first resistor that generates a third control voltage corresponding to a collector current of the second bipolar transistor at a second terminal; and a fourth bipolar transistor in which a power supply voltage is supplied to a collector, the third control voltage is supplied to a base, and a second bias current is output from an emitter.

A multi-frequency tunable low-noise amplifier and a multi-frequency tuning implementation method therefor. The amplifier comprises: a system controller (13) and a micro-electro-mechanical system (MEMS) matching tuner (12) connected to the system controller (13). The system controller (13) is configured to respond to a first operation executed by a user via a user interface (15) when in a first mode, to acquire a first matching value produced on the basis of the first operation, and to output the first matching value to the MEMS matching tuner (12). The MEMS matching tuner (12) is configured to be controlled by the system controller (13) and to support the amplifier working on different frequency bands in tuning processing, thus allowing the matching value of the MEMS matching tuner (12) itself to match a current working frequency band.

A multi-frequency tunable low-noise amplifier and a multi-frequency tuning implementation method therefor. The amplifier comprises: a system controller (13) and a micro-electro-mechanical system (MEMS) matching tuner (12) connected to the system controller (13). The system controller (13) is configured to respond to a first operation executed by a user via a user interface (15) when in a first mode, to acquire a first matching value produced on the basis of the first operation, and to output the first matching value to the MEMS matching tuner (12). The MEMS matching tuner (12) is configured to be controlled by the system controller (13) and to support the amplifier working on different frequency bands in tuning processing, thus allowing the matching value of the MEMS matching tuner (12) itself to match a current working frequency band.

The present invention provides an amplifier arrangement for amplifying a broadband signal, the amplifier arrangement comprising a signal splitter configured to receive the broadband signal and output a first split signal and a second split signal, and a balanced amplifier that is coupled to the signal splitter and is configured to amplify the first split signal and the second split signal and is configured to output a single amplified broadband signal based on the amplified first split signal and the amplified second split signal. The present invention further provides a respective method.

Aspects of this disclosure relate to systems and methods of performing dynamic impedance tuning. Certain aspects may be performed by or include a dynamic impedance matching network. The dynamic impedance matching network can determine a desired output power for a power amplifier, true power information for the power amplifier, and an output power delivered to a load by the power amplifier. In addition, the dynamic impedance matching network can determine whether the output power satisfies the true power information. Responsive to this determination, the dynamic impedance matching network may modify a load line impedance for the power amplifier using an impedance tuning network.

An impedance matching circuit be connected to a non-linear impedance including a superconductor, includes a first terminal designated first connection port to be connected to a first connector of the non-linear impedance, a second terminal designated second connection port to be connected to a second connector of the non-linear impedance, a third terminal designated input/output terminal to receive the signal to amplify and a fourth terminal designated supply terminal to be connected to a polarisation source and configured so that a voltage V is applied between the first connection port and the second connection port. The circuit further includes a plurality of passive electrical components.

An amplifier circuit includes an RF amplifier that is configured to amplify an RF signal between a first terminal and a second terminal across an RF frequency range. The amplifier circuit includes a multi-stage impedance matching network having a broadband impedance transformer, a phase shifter, and a high-pass impedance transformer connected in series with one another between a first port of the amplifier circuit and the first terminal. The broadband impedance transformer provides impedance transformation in the RF frequency range. The phase shifter shifts a phase output port reflection coefficient in a second order harmonic frequency range that overlaps with a second order harmonic of the fundamental RF frequency. The high-pass impedance transformer transmits an RF signal in the RF frequency range while providing impedance transformation in the RF frequency range and transmits RF signals in the second order harmonic frequency range with low impedance.

An amplifier circuit includes an RF amplifier that is configured to amplify an RF signal between a first terminal and a second terminal across an RF frequency range. The amplifier circuit includes a multi-stage impedance matching network having a broadband impedance transformer, a phase shifter, and a high-pass impedance transformer connected in series with one another between a first port of the amplifier circuit and the first terminal. The broadband impedance transformer provides impedance transformation in the RF frequency range. The phase shifter shifts a phase output port reflection coefficient in a second order harmonic frequency range that overlaps with a second order harmonic of the fundamental RF frequency. The high-pass impedance transformer transmits an RF signal in the RF frequency range while providing impedance transformation in the RF frequency range and transmits RF signals in the second order harmonic frequency range with low impedance.

A wireless communication device includes a first low-noise amplifier (LNA). The wireless communication device also includes a first LNA load circuit coupled to an output of the LNA. The wireless communication device further includes a power splitter switchably coupled to the first LNA load circuit. The power splitter includes a negatively coupled transformer and is switchably coupled to multiple outputs.

A wireless communication device includes a first low-noise amplifier (LNA). The wireless communication device also includes a first LNA load circuit coupled to an output of the LNA. The wireless communication device further includes a power splitter switchably coupled to the first LNA load circuit. The power splitter includes a negatively coupled transformer and is switchably coupled to multiple outputs.