The present application provides a filtering circuit and a TV antenna amplifier, the filtering circuit includes a switching module, and the switching module includes a control unit and at least two filtering units. The present application switchably render one of the at least two filtering units conductive through the control unit, and filter the signals of different frequencies in the input signals through the at least two filtering units, so that different filtering units can be switched according to the filtering requirements of the frequency signal in different regions, which makes it a wide application range.

A power amplifier module can be formed that includes metamaterial matching circuits. This power amplifier module can be included as part of a front-end module of a wireless device. The front-end module can replace a passive duplexer with an active duplexer that uses the power amplifier module in combination with a low noise amplifier circuit that can include a metamaterial matching circuit. The combination of PA and LNA circuits that utilize metamaterials can provide the functionality of a duplexer without including a stand-alone or passive duplexer. Thus, in certain cases, the front-end module can provide duplexer functionality without including a separate duplexer. Advantageously, in certain cases, the size of the front-end module can be reduced by eliminating the passive duplexer. Further, the loss introduced into the signal path by the passive duplexer is eliminated improving the performance of the communication system that includes the active duplexer.

A tank circuit (200) includes a tunable resonator subcircuit (210) having a first control input and having an effective parallel resistance that varies with tuning of the tunable resonator subcircuit (210). The tank circuit (200) further comprises a variable negative-resistance subcircuit (250) having a second control input and coupled in parallel to the tunable resonator subcircuit (210), where the variable negative-resistance subcircuit (250) is configured to provide a variable negative resistance, responsive to the control input, so as to increase the effective parallel resistance of the tank circuit (200).

Reduced power amplifier size through elimination of matching network. In some embodiments, a power amplification system can include a power amplifier (PA) configured to receive and amplify a radio-frequency (RF) signal. The power amplification system can further include a filter coupled to the PA and configured to condition the amplified RF signal. The PA can be further configured to drive approximately a characteristic load impedance of the filter. Such a configuration of the PA can be achieved by operating the PA with a high-voltage supply. Such a power amplification system can allow elimination of a matching network to, for example, reduce loss and device size.

Reduced power amplifier size through elimination of matching network. In some embodiments, a power amplification system can include a power amplifier (PA) configured to receive and amplify a radio-frequency (RF) signal. The power amplification system can further include a filter coupled to the PA and configured to condition the amplified RF signal. The PA can be further configured to drive approximately a characteristic load impedance of the filter. Such a configuration of the PA can be achieved by operating the PA with a high-voltage supply. Such a power amplification system can allow elimination of a matching network to, for example, reduce loss and device size.

A high frequency amplifier circuit includes a transistor including a drain, a gate, and a source, an inductance-capacitor (LC) tank connected to the drain, and a transformer connected to the gate and the source.

A radio frequency (RF) power amplifier circuit includes an input and an output. A power amplifier transistor has a first terminal connected to the input, a second terminal connected to the output, and a third terminal defined by a degeneration inductance. A first capacitor is connected to the third terminal of the power amplifier transistor, along with a negative capacitance circuit connected in series with the first capacitor. The negative capacitance and the first capacitor define a series resonance at a predefined operating frequency band, which shunts the degeneration inductance of the third terminal.

A power amplifier comprising an amplifying element for amplifying a signal input to the amplifier, a matching network for varying the reactance presented to the output of the amplifying element at the fundamental frequency of the input signal, the matching network being switchable between first and second operating configurations, wherein in the first operating configuration, a net inductive reactance is presented to the output at the fundamental frequency and in the second operating configuration, a net capacitive reactance is presented to the output at the fundamental frequency.

A power amplification module includes a first amplification transistor that receives a first signal outputs an amplified second signal from the collector thereof; and a bias circuit that supplies a bias current to the base of the first amplification transistor. The first bias circuit includes a first transistor that is diode connected and is supplied with a bias control current; a second transistor that is diode connected, the collector thereof being connected to the emitter of the first transistor; a third transistor, the base thereof being connected to the base of the first transistor, and the bias current being output from the emitter thereof; a fourth transistor, the collector thereof being connected to the emitter of the third transistor and the base thereof being connected to the base of the second transistor; and a first capacitor between the base and the emitter of the third transistor.

A power amplification module includes a first amplification transistor that receives a first signal outputs an amplified second signal from the collector thereof; and a bias circuit that supplies a bias current to the base of the first amplification transistor. The first bias circuit includes a first transistor that is diode connected and is supplied with a bias control current; a second transistor that is diode connected, the collector thereof being connected to the emitter of the first transistor; a third transistor, the base thereof being connected to the base of the first transistor, and the bias current being output from the emitter thereof; a fourth transistor, the collector thereof being connected to the emitter of the third transistor and the base thereof being connected to the base of the second transistor; and a first capacitor between the base and the emitter of the third transistor.