An active device and circuits utilized therewith are disclosed. In an aspect, the active device comprises an n-type transistor having a drain, gate and bulk and a p-type transistor having a drain, gate and bulk. The n-type transistor and the p-type transistor include a common source. The device includes a first capacitor coupled between the gate of the n-type transistor and the gate of the p-type transistor, a second capacitor coupled between the drain of the n-type transistor and the drain of p-type transistor and a third capacitor coupled between the bulk of the n-type transistor and the bulk of p-type transistor. The active device has a high breakdown voltage, is memory less and traps even harmonic signals.

An amplification circuit has a field effect transistor, an input side matching circuit, an output side matching circuit, a capacitor, and a resistor. The input side matching circuit is connected between an input port and the source terminal of the field effect transistor and outputs an input signal that changes with a bias voltage as a center value. The output side matching circuit is connected between an output port and the drain terminal of the field effect transistor. The capacitor is connected between the gate terminal of the field effect transistor and a first reference voltage source. The resistor is connected between the gate terminal of the field effect transistor and the first reference voltage source.

A wireless communication device includes a first low-noise amplifier (LNA). The wireless communication device also includes a first LNA load circuit coupled to an output of the LNA. The wireless communication device further includes a power splitter switchably coupled to the first LNA load circuit. The power splitter includes a negatively coupled transformer and is switchably coupled to multiple outputs.

A wireless communication device includes a first low-noise amplifier (LNA). The wireless communication device also includes a first LNA load circuit coupled to an output of the LNA. The wireless communication device further includes a power splitter switchably coupled to the first LNA load circuit. The power splitter includes a negatively coupled transformer and is switchably coupled to multiple outputs.

A circuit includes a differential input pair stage including bipolar transistors and configured to receive an RF input signal; a cascode stage coupled between the differential input pair stage and an output node, the cascode stage including bipolar transistors; and a current source including a first bipolar transistor coupled to a first output of the differential input pair stage and a second bipolar transistor coupled to a second output of the differential input pair stage.

Power amplification system with variable supply voltage. A power amplification system can include a power amplifier and a boost converter configured to provide a supply voltage to the power amplifier. The power amplification system can include a control system configured to provide a boost converter control signal to the boost converter to adjust the supply voltage based on a parameter associated with the power amplifier.

Power amplification system with variable supply voltage. A power amplification system can include a power amplifier and a boost converter configured to provide a supply voltage to the power amplifier. The power amplification system can include a control system configured to provide a boost converter control signal to the boost converter to adjust the supply voltage based on a parameter associated with the power amplifier.

An RF amplifier module that has a plurality of amplifiers wherein at least one of the amplifiers is powered via an envelope tracking module. The biasing input of at least one of the amplifiers is provided to the first amplifier to power the first amplifier to reduce power consumption. The first amplifier may also be powered via fixed biasing to provide greater stability of the module.

Embodiments of an RF amplifier include a transistor with a control terminal and first and second current carrying terminals, and a shunt circuit coupled between the first current carrying terminal and a ground reference node. The shunt circuit includes a first shunt inductive element, a second shunt inductance, and a shunt capacitor coupled in series. Instead of a separate inductive element, the second shunt inductance may be achieved via magnetic coupling of the first shunt inductive element and an envelope inductive element of a video bandwidth circuit that is coupled between an RF cold point node (between the first and second shunt inductances) and the ground. Alternatively, an envelope inductance in the video bandwidth circuit may be achieved via magnetic coupling of first and second shunt inductive elements. A better RF cold point may be achieved without physically incorporating separate inductive elements, allowing for reduction in cost and size.

A dual operation mode power amplifier is disclosed. In the power amplifier in accordance with an embodiment of the present invention, a bias circuit part can be converted to decrease power consumption. Different from the prior art, performance of the present invention is not reduced in a high power mode, and no additional passive components like inductors or transformers with a large area are necessary to be further added. Furthermore, a tunable impedance matching circuit provides impedances respectively matching impedances of a fully differential amplifier and a single-ended amplifier, thereby improving the performance of the power amplifier.