Patent classifications
H03F3/193
Power amplification module
A power amplification module includes a first transistor which amplifies and outputs a radio frequency signal input to its base; a current source which outputs a control current; a second transistor connected to an output of the current source, a first current from the control current input to its collector, a control voltage generation circuit connected to the output and which generates a control voltage according to a second current from the control current; a first FET, the drain being supplied with a supply voltage, the source being connected to the base of the first transistor, and the gate being supplied with the control voltage; and a second FET, the drain being supplied with the supply voltage, the source being connected to the base of the second transistor, and the gate being supplied with the control voltage.
Power amplification module
A power amplification module includes a first transistor which amplifies and outputs a radio frequency signal input to its base; a current source which outputs a control current; a second transistor connected to an output of the current source, a first current from the control current input to its collector, a control voltage generation circuit connected to the output and which generates a control voltage according to a second current from the control current; a first FET, the drain being supplied with a supply voltage, the source being connected to the base of the first transistor, and the gate being supplied with the control voltage; and a second FET, the drain being supplied with the supply voltage, the source being connected to the base of the second transistor, and the gate being supplied with the control voltage.
WIRELESS POWER RECEIVER WITH A TRANSISTOR RECTIFIER
Embodiments disclosed herein describe a wireless power receiver including a synchronous transistor rectifier using a Class-E or a Class-F amplifier. The wireless power receiver includes at least one radio frequency (RF) antenna configured to generate an alternating current (AC) waveform from received RF waves. The wireless power receiver further includes a power line configured to carry a first signal based on the AC current generated by the least one RF antenna, and a tap-line coupled to the power line, the tap-line being configured to carry a second signal. The second signal is based on the AC current generated by the least one RF antenna and distinct from the first signal. The wireless power receiver also includes a transistor coupled to at least the power line and the tap-line. The transistor is configured to provide a direct current (DC) waveform to a load based on the first and second signals.
WIRELESS POWER RECEIVER WITH A TRANSISTOR RECTIFIER
Embodiments disclosed herein describe a wireless power receiver including a synchronous transistor rectifier using a Class-E or a Class-F amplifier. The wireless power receiver includes at least one radio frequency (RF) antenna configured to generate an alternating current (AC) waveform from received RF waves. The wireless power receiver further includes a power line configured to carry a first signal based on the AC current generated by the least one RF antenna, and a tap-line coupled to the power line, the tap-line being configured to carry a second signal. The second signal is based on the AC current generated by the least one RF antenna and distinct from the first signal. The wireless power receiver also includes a transistor coupled to at least the power line and the tap-line. The transistor is configured to provide a direct current (DC) waveform to a load based on the first and second signals.
APPARATUS AND METHODS FOR BIAS SWITCHING OF POWER AMPLIFIERS
Apparatus and methods for bias switching of power amplifiers are provided herein. In certain configurations, a power amplifier system includes a power amplifier that provides amplification to a radio frequency (RF) signal, a power management circuit that controls a voltage level of a supply voltage of the power amplifier, and a bias control circuit that biases the power amplifier. The power management circuit is operable in multiple supply control modes, such as an average power tracking (APT) mode and an envelope tracking (ET) mode. The bias control circuit is configured to switch a bias of the power amplifier based on the supply control mode of the power management circuit.
APPARATUS AND METHODS FOR BIAS SWITCHING OF POWER AMPLIFIERS
Apparatus and methods for bias switching of power amplifiers are provided herein. In certain configurations, a power amplifier system includes a power amplifier that provides amplification to a radio frequency (RF) signal, a power management circuit that controls a voltage level of a supply voltage of the power amplifier, and a bias control circuit that biases the power amplifier. The power management circuit is operable in multiple supply control modes, such as an average power tracking (APT) mode and an envelope tracking (ET) mode. The bias control circuit is configured to switch a bias of the power amplifier based on the supply control mode of the power management circuit.
SEMICONDUCTOR DEVICES HAVING A PLURALITY OF UNIT CELL TRANSISTORS THAT HAVE SMOOTHED TURN-ON BEHAVIOR AND IMPROVED LINEARITY
A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in parallel, and each unit cell transistor including a respective gate finger. Respective threshold voltages of first and second of the unit cell transistors differ by at least 0.1 volts and/or threshold voltages of first and second segments of a third of the unit cell transistors differ by at least 0.1 volts.
SEMICONDUCTOR DEVICES HAVING A PLURALITY OF UNIT CELL TRANSISTORS THAT HAVE SMOOTHED TURN-ON BEHAVIOR AND IMPROVED LINEARITY
A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in parallel, and each unit cell transistor including a respective gate finger. Respective threshold voltages of first and second of the unit cell transistors differ by at least 0.1 volts and/or threshold voltages of first and second segments of a third of the unit cell transistors differ by at least 0.1 volts.
Power amplification device, terminal having the same, and base station having the same
The method and system for converging a 5th-generation (5G) communication system for supporting higher data rates beyond a 4th-generation (4G) system with a technology for internet of things (IoT) are provided. The method includes intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. The system includes a power amplification device capable of minimizing the effect of envelope impedance. The power amplification device may be incorporated in a terminal and a base station.
Power amplification device, terminal having the same, and base station having the same
The method and system for converging a 5th-generation (5G) communication system for supporting higher data rates beyond a 4th-generation (4G) system with a technology for internet of things (IoT) are provided. The method includes intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. The system includes a power amplification device capable of minimizing the effect of envelope impedance. The power amplification device may be incorporated in a terminal and a base station.