An amplifying apparatus is provided, which includes a power-source main line, a plurality of amplifying control devices which include an amplifier, a power-source branch line, an over current protector. The amplifier amplifies a high-frequency signal. The power-source branch line is branched from the power-source main line. The over current protector disposed for the power-source branch line is connected to the amplifier and configured to disconnect the power-source branch line based on drive current flowing through the amplifier from the power-source branch line. The power-source main line is common to the plurality of amplifying control devices.

An amplifying apparatus is provided, which includes a power-source main line, a plurality of amplifying control devices which include an amplifier, a power-source branch line, an over current protector. The amplifier amplifies a high-frequency signal. The power-source branch line is branched from the power-source main line. The over current protector disposed for the power-source branch line is connected to the amplifier and configured to disconnect the power-source branch line based on drive current flowing through the amplifier from the power-source branch line. The power-source main line is common to the plurality of amplifying control devices.

The present disclosure provides a power amplifier and an electrical device. The two-stage power amplifier architecture is tuned staggered before power combining. A previous stage matching network and its input matching are split into a cascaded staggered tuning, such that the center frequency is at frequency point 1 less than the design frequency point and frequency point 2 greater than design frequency point, and then the power combining stage is tuned at the design frequency point. At advanced process nodes (such as 65 nm or below), compared with the known architecture, in-band signal quality and out-of-band filtering effect of the power amplifier chip integrating this architecture will be better when using the same number of transformers (same area), the reliability will be better. Due to its good flatness within the band, this architecture is especially suitable for carrier aggregation communication occasions.

Disclosed in the present invention are a balanced radio frequency power amplifier, a chip and a communication terminal. The radio frequency power amplifier divides, by means of a 90-degree power splitter unit, a radio frequency input signal into two equal-amplitude signals having a phase difference of 90 degrees, the two radio frequency input signals are amplified and then inputted into an adjustable 90 -degree power combiner, and the values of a adjustable capacitor and an adjustable resistor in the adjustable 90-degree power combiner are controlled by means of a control unit, so as to synthesize the two radio frequency input signals into one radio frequency input signal when the phase difference and amplitude difference of the two signals at different frequencies are the smallest, and to input the radio frequency input signal into a circuit of the next stage by means of a specific radio frequency transmission path.

Disclosed in the present invention are a balanced radio frequency power amplifier, a chip and a communication terminal. The radio frequency power amplifier divides, by means of a 90-degree power splitter unit, a radio frequency input signal into two equal-amplitude signals having a phase difference of 90 degrees, the two radio frequency input signals are amplified and then inputted into an adjustable 90 -degree power combiner, and the values of a adjustable capacitor and an adjustable resistor in the adjustable 90-degree power combiner are controlled by means of a control unit, so as to synthesize the two radio frequency input signals into one radio frequency input signal when the phase difference and amplitude difference of the two signals at different frequencies are the smallest, and to input the radio frequency input signal into a circuit of the next stage by means of a specific radio frequency transmission path.

An amplifier device includes a regulator circuit, a first voltage converting circuit, a first control circuit, and an amplifier circuit. The regulator circuit is configured to output a first driving voltage. The first voltage converting circuit is coupled to the regulator circuit, and is configured to output one of the first driving voltage and at least one first voltages related to the first driving voltage, as a first operating voltage. The first control circuit is coupled to the first voltage converting circuit through a first node, and is configured to receive the first operating voltage and generate a first operating signal according to the first operating voltage and a first control signal. The amplifier circuit is coupled to the first control circuit and the regulator circuit, and is configured to receive the first driving voltage, and is controlled by the first operating signal to generate an output voltage.

An amplifier device includes a regulator circuit, a first voltage converting circuit, a first control circuit, and an amplifier circuit. The regulator circuit is configured to output a first driving voltage. The first voltage converting circuit is coupled to the regulator circuit, and is configured to output one of the first driving voltage and at least one first voltages related to the first driving voltage, as a first operating voltage. The first control circuit is coupled to the first voltage converting circuit through a first node, and is configured to receive the first operating voltage and generate a first operating signal according to the first operating voltage and a first control signal. The amplifier circuit is coupled to the first control circuit and the regulator circuit, and is configured to receive the first driving voltage, and is controlled by the first operating signal to generate an output voltage.

RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.

RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.

An integrated circuit that includes a die with an active radio frequency (RF) unit embedded thereon; a first port for receiving an output signal from the active RF unit; a harmonic filter that comprises a first harmonic filter inductor; and a first RF inductive load that is electrically coupled to the first port and is magnetically coupled to the first harmonic filter inductor.