Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are possible where the amplifier is configured to operate in at least an active mode and a standby mode. Circuital arrangements can reduce bias circuit and stacked transistors standby current during operation in the standby mode and to reduce impedance presented to the gates of the stacked transistors during operation in the active mode while maintaining voltage compliance of the stacked transistors during both modes of operation.

An LNA having a plurality of paths, each of which can be controlled independently to achieve a gain mode. Each path includes at least an input FET and an output FET coupled in series. A gate of the output FET is controlled to set the gain of the LNA. Signals to be amplified are applied to the gate of the input FET. Additional stacked FETs are provided in series between the input FET and the output FET.

An LNA having a plurality of paths, each of which can be controlled independently to achieve a gain mode. Each path includes at least an input FET and an output FET coupled in series. A gate of the output FET is controlled to set the gain of the LNA. Signals to be amplified are applied to the gate of the input FET. Additional stacked FETs are provided in series between the input FET and the output FET.

Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage. According to one aspect, the gate of the input transistor of the amplifier is biased with a fixed voltage whereas the gates of the other transistors of the amplifier are biased with variable voltages that are linear functions of the varying supply voltage. According to another aspect, the linear functions are such that the variable voltages coincide with the fixed voltage at a value of the varying supply voltage for which the input transistor is at the edge of triode. According to another aspect, biasing of the stacked transistors is such that, while the supply voltage varies, the drain-to-source voltage of the input transistor is maintained to a fixed value whereas the drain-to-source voltages of all other transistors are equal to one another.

Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage. According to one aspect, the gate of the input transistor of the amplifier is biased with a fixed voltage whereas the gates of the other transistors of the amplifier are biased with variable voltages that are linear functions of the varying supply voltage. According to another aspect, the linear functions are such that the variable voltages coincide with the fixed voltage at a value of the varying supply voltage for which the input transistor is at the edge of triode. According to another aspect, biasing of the stacked transistors is such that, while the supply voltage varies, the drain-to-source voltage of the input transistor is maintained to a fixed value whereas the drain-to-source voltages of all other transistors are equal to one another.

Described are concepts, systems, circuits and techniques directed toward methods and apparatus for generating one or more pulse width modulated (PWM) waveforms with the ability to dynamically control pulse width and phase with respect to a reference signal.

Described are concepts, systems, circuits and techniques directed toward methods and apparatus for generating one or more pulse width modulated (PWM) waveforms with the ability to dynamically control pulse width and phase with respect to a reference signal.

An exemplary embodiment of a low noise amplifier has integral noise cancellation to provide a low noise figure and operation over a frequency range of 40 GHz-60 GHz. An amplifier amplifies an input signal as well as noise present with the amplified signal and amplified noise being out of phase and in phase, respectively, with the corresponding inputs. An auxiliary amplifier amplifies the same inputs and generates an amplified signal and amplified noise both being out of phase relative to the inputs. A summation circuit combines all of these amplified signals with the noise being cancelled since the auxiliary amplifier provides the same amount of amplification as the amplifier and the amplified noise signals being summed are 180 degrees out of phase to each other. Preferably, the amplifier, auxiliary amplifier and the summation device utilize CMOS transistors disposed on an SOI substrate with impedance stabilization over the frequency range.

A method for increasing efficiency of a radio frequency (RF) amplifier employing laterally diffused metal oxide semiconductor (LDMOS) transistors coupled to an RF exciter including determining an emission mode of modulated RF input signals generated by the exciter, if the emission mode is of a type where the modulated RF input signals have a continuously varying envelope, biasing the LDMOS transistors in the RF amplifier for linear operation, and if the emission mode is of a type where the modulated RF input signals do not have a continuously varying envelope, biasing the LDMOS transistors in the RF amplifier with a fixed quiescent drain current and a fixed drain supply voltage for the LDMOS transistors selected to cause the LDMOS transistors to operate in compression.

A method for increasing efficiency of a radio frequency (RF) amplifier employing laterally diffused metal oxide semiconductor (LDMOS) transistors coupled to an RF exciter including determining an emission mode of modulated RF input signals generated by the exciter, if the emission mode is of a type where the modulated RF input signals have a continuously varying envelope, biasing the LDMOS transistors in the RF amplifier for linear operation, and if the emission mode is of a type where the modulated RF input signals do not have a continuously varying envelope, biasing the LDMOS transistors in the RF amplifier with a fixed quiescent drain current and a fixed drain supply voltage for the LDMOS transistors selected to cause the LDMOS transistors to operate in compression.