H03F3/193

RADIO FREQUENCY AMPLIFIER CIRCUITRY WITH IMPROVED LINEARITY
20200313630 · 2020-10-01 ·

Radio frequency (RF) amplifier circuitry includes an input node, an output node, an amplifier, and bootstrap circuitry. The amplifier includes a control node coupled to the input node, a first amplifier node coupled to the output node, and a second amplifier node coupled to a fixed potential. The amplifier is configured to receive an input signal having a first frequency at the control node and change an impedance between the first amplifier node and the second amplifier node based on the input signal. The bootstrap circuitry is coupled between the control node and the second amplifier node. The bootstrap circuitry is configured to provide a low impedance path between the control node and the second amplifier node for signals having a second frequency that is equal to about twice the first frequency and provide a high impedance path for signals having a frequency outside the second frequency.

Injection lock power amplifier with back-gate bias
10790789 · 2020-09-29 · ·

In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.

Injection lock power amplifier with back-gate bias
10790789 · 2020-09-29 · ·

In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.

Impedance converter to achieve negative capacitance and/or negative inductance for radio frequency front end matching
10790805 · 2020-09-29 · ·

An impedance converter circuit achieves negative capacitance and/or negative inductance for radio frequency (RF) front end impedance matching for low noise amplifier (LNA) designs. The impedance converter circuit includes a first transistor coupled to a first RF input at a source of the first transistor. The impedance converter circuit also includes a second transistor coupled to a second RF input at a source of the second transistor. The second transistor is cross-coupled to the first transistor to form a cross-coupled pair of transistors. The cross-coupled pair of transistors is configured to generate a negative capacitance or a negative inductance based on a load impedance coupled to a drain of the first transistor and a drain of the second transistor.

Impedance converter to achieve negative capacitance and/or negative inductance for radio frequency front end matching
10790805 · 2020-09-29 · ·

An impedance converter circuit achieves negative capacitance and/or negative inductance for radio frequency (RF) front end impedance matching for low noise amplifier (LNA) designs. The impedance converter circuit includes a first transistor coupled to a first RF input at a source of the first transistor. The impedance converter circuit also includes a second transistor coupled to a second RF input at a source of the second transistor. The second transistor is cross-coupled to the first transistor to form a cross-coupled pair of transistors. The cross-coupled pair of transistors is configured to generate a negative capacitance or a negative inductance based on a load impedance coupled to a drain of the first transistor and a drain of the second transistor.

Generation and synchronization of pulse-width modulated (PWM) waveforms for radio-frequency (RF) applications

Described are concepts, systems, circuits and techniques directed toward methods and apparatus for generating one or more pulse width modulated (PWM) waveforms with the ability to dynamically control pulse width and phase with respect to a reference signal.

Generation and synchronization of pulse-width modulated (PWM) waveforms for radio-frequency (RF) applications

Described are concepts, systems, circuits and techniques directed toward methods and apparatus for generating one or more pulse width modulated (PWM) waveforms with the ability to dynamically control pulse width and phase with respect to a reference signal.

RESONATOR CIRCUIT

The invention relates to a resonator circuit, the resonator circuit comprising a transformer comprising a primary winding and a secondary winding, wherein the primary winding is inductively coupled with the secondary winding, a primary capacitor being connected to the primary winding, the primary capacitor and the primary winding forming a primary circuit, and a secondary capacitor being connected to the secondary winding, the secondary capacitor and the secondary winding forming a secondary circuit, wherein the resonator circuit has a common mode resonance frequency at an excitation of the primary circuit in a common mode, wherein the resonator circuit has a differential mode resonance frequency at an excitation of the primary circuit in a differential mode, and wherein the common mode resonance frequency is different from the differential mode resonance frequency.

METHOD AND APPARATUS FOR DIGITAL ENVELOPE TRACKING WITH DYNAMICALLY CHANGING VOLTAGE LEVELS FOR POWER AMPLIFIER
20200304082 · 2020-09-24 ·

A device for digital envelope tracking with dynamically changing voltage levels for a radio frequency (RF) power amplifier is disclosed. A power management unit generates a set of supply voltages for a power amplifier based on a control signal. A setpoint generator in the power management integrated circuit gradually increases or decreases a target voltage such that the set of supply voltages output from the voltage converter gradually increase or decrease in response to a gradual transition of the target voltage. A transceiver includes digital models for replicating a behavior of the setpoint generator and a voltage regulator in the voltage converter such that a signal pre-distortion unit may use an instantaneous voltage level for signal predistortion.

POWER AMPLIFICATION APPARATUS AND ELECTROMAGNETIC RADIATION APPARATUS
20200304075 · 2020-09-24 · ·

An apparatus includes: a transistor including an input terminal for an input signal and an output terminal for an output signal; a matching circuit configured to match a load impedance regarding a fundamental harmonic of at least one of the input signal and the output signal to an impedance of the transistor and include a first conductive film being laminated over the transistor and coupled to at least one of the input terminal and the output terminal; and a processing circuit configured to adjust an impedance regarding a harmonic of at least one of the input signal and the output signal and include a second conductive film being laminated over the first conductive film and coupled to at least one of the input terminal and the output terminal through a via which penetrates through a dielectric layer sandwiched between the first conductive film and the second conductive film.