Patent classifications
H03F3/193
High-power amplifier package
Package assemblies for improving heat dissipation of high-power components in microwave circuits are described. A laminate that includes microwave circuitry may have cut-outs that allow high-power components to be mounted directly on a heat slug below the laminate. Electrical connections to circuitry on the laminate may be made with wire bonds. The packaging allows more flexible design and tuning of packaged microwave circuitry.
High-power amplifier package
Package assemblies for improving heat dissipation of high-power components in microwave circuits are described. A laminate that includes microwave circuitry may have cut-outs that allow high-power components to be mounted directly on a heat slug below the laminate. Electrical connections to circuitry on the laminate may be made with wire bonds. The packaging allows more flexible design and tuning of packaged microwave circuitry.
Source follower
A source follower with an input node and an output node includes a first transistor, a second transistor, and a DC (Direct Current) tracking circuit. The first transistor has a control terminal, a first terminal coupled to a first node, and a second terminal coupled to a second node. The second transistor has a control terminal, a first terminal coupled to a ground voltage, and a second terminal coupled to the first node. The DC tracking circuit sets the second DC voltage at the second node to a specific level. The specific level is determined according to the first DC voltage at the first node. The output node of the source follower is coupled to the first node.
Source follower
A source follower with an input node and an output node includes a first transistor, a second transistor, and a DC (Direct Current) tracking circuit. The first transistor has a control terminal, a first terminal coupled to a first node, and a second terminal coupled to a second node. The second transistor has a control terminal, a first terminal coupled to a ground voltage, and a second terminal coupled to the first node. The DC tracking circuit sets the second DC voltage at the second node to a specific level. The specific level is determined according to the first DC voltage at the first node. The output node of the source follower is coupled to the first node.
pHEMT switch circuits with enhanced linearity performance
pHEMT-based switch circuits, devices including same, and methods of improving the linearity thereof. In one example, an antenna switch module includes a pHEMT switching circuit connected in series between an input signal terminal and a load terminal, the pHEMT switching circuit including at least one pHEMT configured to produce a first harmonic signal at the load terminal responsive to being driven by an input signal of a fundamental frequency received at the input signal terminal, the first harmonic signal having a first phase, and a gate resistance circuit connected to a gate of the at least one pHEMT and having a resistance value selected to produce a second harmonic signal at the load terminal, the second harmonic signal having a second phase opposite to the first phase.
pHEMT switch circuits with enhanced linearity performance
pHEMT-based switch circuits, devices including same, and methods of improving the linearity thereof. In one example, an antenna switch module includes a pHEMT switching circuit connected in series between an input signal terminal and a load terminal, the pHEMT switching circuit including at least one pHEMT configured to produce a first harmonic signal at the load terminal responsive to being driven by an input signal of a fundamental frequency received at the input signal terminal, the first harmonic signal having a first phase, and a gate resistance circuit connected to a gate of the at least one pHEMT and having a resistance value selected to produce a second harmonic signal at the load terminal, the second harmonic signal having a second phase opposite to the first phase.
Envelope-shaped bias for power amplifier
This disclosure provides systems, methods and apparatuses for characterizing and operating a power amplifier. Before being placed into operation, output phase and output gain characteristics of the power amplifier may be determined over various operating conditions including varying two independent control signals and a supply voltage. The output phase and output gain characteristics may be stored for later retrieval. The power amplifier may be operated by determining a control signal profile for the two independent control signals based on operating conditions and radio-frequency (RF) envelope information associated with an input signal received by the power amplifier. The independent control signals may be generated in accordance with the control signal profile.
Envelope-shaped bias for power amplifier
This disclosure provides systems, methods and apparatuses for characterizing and operating a power amplifier. Before being placed into operation, output phase and output gain characteristics of the power amplifier may be determined over various operating conditions including varying two independent control signals and a supply voltage. The output phase and output gain characteristics may be stored for later retrieval. The power amplifier may be operated by determining a control signal profile for the two independent control signals based on operating conditions and radio-frequency (RF) envelope information associated with an input signal received by the power amplifier. The independent control signals may be generated in accordance with the control signal profile.
AMPLIFIER DEVICES WITH PHASE DISTORTION COMPENSATION AND METHODS OF MANUFACTURE THEREOF
The embodiments described herein include amplifiers that are typically used in radio frequency (RF) applications. Specifically, the amplifiers described herein include a phase distortion compensation circuit that can compensate for input impedance variations that could otherwise lead to reduced efficiency and power performance. In one specific embodiment, the phase distortion compensation circuit is used to compensate for input impedance variations in the peaking amplifiers of a Doherty amplifier. In such embodiments, the phase distortion compensation circuit can absorb the non-linear input impedances of the peaking amplifiers in a way that may facilitate improved phase maintenance between the carrier and peaking stages of the Doherty amplifier.
AMPLIFIER DEVICES WITH PHASE DISTORTION COMPENSATION AND METHODS OF MANUFACTURE THEREOF
The embodiments described herein include amplifiers that are typically used in radio frequency (RF) applications. Specifically, the amplifiers described herein include a phase distortion compensation circuit that can compensate for input impedance variations that could otherwise lead to reduced efficiency and power performance. In one specific embodiment, the phase distortion compensation circuit is used to compensate for input impedance variations in the peaking amplifiers of a Doherty amplifier. In such embodiments, the phase distortion compensation circuit can absorb the non-linear input impedances of the peaking amplifiers in a way that may facilitate improved phase maintenance between the carrier and peaking stages of the Doherty amplifier.