The embodiments described herein provide radio frequency (RF) amplifiers, and in some embodiments provide amplifiers that can be used in high power RF applications. Specifically, the amplifiers described herein may be implemented with multiple resonant circuits to provide class F and inverse class F amplifiers and methods of operation. In general, the resonant circuits are implemented inside a device package with a transistor die to provide high efficiency amplification for a variety of applications.

The embodiments described herein provide radio frequency (RF) amplifiers, and in some embodiments provide amplifiers that can be used in high power RF applications. Specifically, the amplifiers described herein may be implemented with multiple resonant circuits to provide class F and inverse class F amplifiers and methods of operation. In general, the resonant circuits are implemented inside a device package with a transistor die to provide high efficiency amplification for a variety of applications.

The embodiments described herein provide radio frequency (RF) amplifiers, and in some embodiments provide amplifiers that can be used in high power RF applications. Specifically, the amplifiers described herein may be implemented with multiple resonant circuits to provide class F and inverse class F amplifiers and methods of operation. In general, the resonant circuits are implemented inside a device package with a transistor die to provide high efficiency amplification for a variety of applications.

The embodiments described herein provide radio frequency (RF) amplifiers, and in some embodiments provide amplifiers that can be used in high power RF applications. Specifically, the amplifiers described herein may be implemented with multiple resonant circuits to provide class F and inverse class F amplifiers and methods of operation. In general, the resonant circuits are implemented inside a device package with a transistor die to provide high efficiency amplification for a variety of applications.

A power amplification module includes a first transistor which amplifies and outputs a radio frequency signal input to its base; a current source which outputs a control current; a second transistor connected to an output of the current source, a first current from the control current input to its collector, a control voltage generation circuit connected to the output and which generates a control voltage according to a second current from the control current; a first FET, the drain being supplied with a supply voltage, the source being connected to the base of the first transistor, and the gate being supplied with the control voltage; and a second FET, the drain being supplied with the supply voltage, the source being connected to the base of the second transistor, and the gate being supplied with the control voltage.

A power amplification module includes a first transistor which amplifies and outputs a radio frequency signal input to its base; a current source which outputs a control current; a second transistor connected to an output of the current source, a first current from the control current input to its collector, a control voltage generation circuit connected to the output and which generates a control voltage according to a second current from the control current; a first FET, the drain being supplied with a supply voltage, the source being connected to the base of the first transistor, and the gate being supplied with the control voltage; and a second FET, the drain being supplied with the supply voltage, the source being connected to the base of the second transistor, and the gate being supplied with the control voltage.

A PA power supply, which includes a first ET power supply, power supply control circuitry, a first PMOS switching element, and a second PMOS switching element, is disclosed. During a first operating mode, the power supply control circuitry selects an OFF state of the first PMOS switching element, selects an ON state of the second PMOS switching element, and adjusts a voltage of a first switch control signal to maintain the OFF state of the first PMOS switching element using a voltage at a source of the first PMOS switching element and a voltage at a drain of the first PMOS switching element; the PA power supply provides a first PA power supply signal; and the first ET power supply provides a first ET power supply signal, such that the first PA power supply signal is based on the first ET power supply signal.

A PA power supply, which includes a first ET power supply, power supply control circuitry, a first PMOS switching element, and a second PMOS switching element, is disclosed. During a first operating mode, the power supply control circuitry selects an OFF state of the first PMOS switching element, selects an ON state of the second PMOS switching element, and adjusts a voltage of a first switch control signal to maintain the OFF state of the first PMOS switching element using a voltage at a source of the first PMOS switching element and a voltage at a drain of the first PMOS switching element; the PA power supply provides a first PA power supply signal; and the first ET power supply provides a first ET power supply signal, such that the first PA power supply signal is based on the first ET power supply signal.

Wideband power combiners and splitters are provided herein. In certain embodiments, a power combiner/splitter is implemented with a first coil connecting a first port and a second port, and a second coil connecting a third port and a fourth port. The first coil and the second coil are inductively coupled to one another. For example, the first coil and the second coil can be formed using adjacent conductive layers of a semiconductor chip, an integrated passive device, or a laminate. The power combiner/splitter further includes a fifth port tapping a center of the first coil and a sixth port tapping a center of the second coil. The fifth port and the sixth port serve to connect capacitors and/or other impedance to the center of the coils to thereby provide wideband operation.

Wideband power combiners and splitters are provided herein. In certain embodiments, a power combiner/splitter is implemented with a first coil connecting a first port and a second port, and a second coil connecting a third port and a fourth port. The first coil and the second coil are inductively coupled to one another. For example, the first coil and the second coil can be formed using adjacent conductive layers of a semiconductor chip, an integrated passive device, or a laminate. The power combiner/splitter further includes a fifth port tapping a center of the first coil and a sixth port tapping a center of the second coil. The fifth port and the sixth port serve to connect capacitors and/or other impedance to the center of the coils to thereby provide wideband operation.