Monolithic microwave integrated circuits are provided that include a substrate, a transmit/receive selection device that is formed on the substrate, a high power amplifier formed on the substrate and coupled to a first RF port of the transmit/receive selection device, a low noise amplifier formed on the substrate and coupled to a second RF port of the transmit/receive selection device and a protection circuit that is coupled to a first control port of the transmit/receive selection device.

Monolithic microwave integrated circuits are provided that include a substrate, a transmit/receive selection device that is formed on the substrate, a high power amplifier formed on the substrate and coupled to a first RF port of the transmit/receive selection device, a low noise amplifier formed on the substrate and coupled to a second RF port of the transmit/receive selection device and a protection circuit that is coupled to a first control port of the transmit/receive selection device.

A radio frequency (RF) power amplifier device package includes a substrate and a first die attached to the substrate at a bottom surface of the first die. The first die includes top gate or drain contacts on a top surface of the first die opposite the bottom surface. At least one of the top gate or drain contacts is electrically connected to a respective bottom gate or drain contact on the bottom surface of the first die by a respective conductive via structure. An integrated interconnect structure, which is on the first die opposite the substrate, includes a first contact pad on the top gate contact or the top drain contact of the first die, and at least one second contact pad connected to a package lead, a contact of a second die, impedance matching circuitry, and/or harmonic termination circuitry.

A radio frequency (RF) power amplifier device package includes a substrate and a first die attached to the substrate at a bottom surface of the first die. The first die includes top gate or drain contacts on a top surface of the first die opposite the bottom surface. At least one of the top gate or drain contacts is electrically connected to a respective bottom gate or drain contact on the bottom surface of the first die by a respective conductive via structure. An integrated interconnect structure, which is on the first die opposite the substrate, includes a first contact pad on the top gate contact or the top drain contact of the first die, and at least one second contact pad connected to a package lead, a contact of a second die, impedance matching circuitry, and/or harmonic termination circuitry.

A current output circuit includes an input circuit that outputs a second current in response to a first current when the first current is inputted, an output circuit that outputs a third current in response to the second current, and a control circuit that causes the output circuit to output a current when a control signal is inputted before the first current is inputted to the input circuit. The output circuit includes transistors of a first group and the input circuit includes transistors of a second group.

A current output circuit includes an input circuit that outputs a second current in response to a first current when the first current is inputted, an output circuit that outputs a third current in response to the second current, and a control circuit that causes the output circuit to output a current when a control signal is inputted before the first current is inputted to the input circuit. The output circuit includes transistors of a first group and the input circuit includes transistors of a second group.

A multi-gain LNA with inductive source degeneration is presented. The inductive source degeneration is provided via a tunable degeneration network that includes an inductor in parallel with one or more switchable shunting networks. Each shunting network includes a shunting capacitor that can selectively be coupled in parallel to the inductor. A capacitance of the shunting capacitor is calculated so that a combined impedance of the inductor and the shunting capacitor at a narrowband frequency of operation is effectively an inductance. The inductance is calculated according to a desired gain of the LNA. According to one aspect, the switchable shunting network includes a resistor in series connection with the shunting capacitor to provide broadband frequency response stability of the tunable degeneration network. According to another aspect, the LNA includes a plurality of selectable branches to further control gain of the LNA.

A multi-gain LNA with inductive source degeneration is presented. The inductive source degeneration is provided via a tunable degeneration network that includes an inductor in parallel with one or more switchable shunting networks. Each shunting network includes a shunting capacitor that can selectively be coupled in parallel to the inductor. A capacitance of the shunting capacitor is calculated so that a combined impedance of the inductor and the shunting capacitor at a narrowband frequency of operation is effectively an inductance. The inductance is calculated according to a desired gain of the LNA. According to one aspect, the switchable shunting network includes a resistor in series connection with the shunting capacitor to provide broadband frequency response stability of the tunable degeneration network. According to another aspect, the LNA includes a plurality of selectable branches to further control gain of the LNA.

A power control circuit includes a negative feedback loop, and a radio frequency signal path including a first NMOS transistor having a gate configured as a radio frequency signal input end, a drain connected with a source of a second NMOS transistor, and a source connected with a ground terminal. A drain of the second NMOS transistor is configured as a radio frequency signal output end and connected with a first voltage source. The negative feedback loop includes a third NMOS transistor having a gate connected with an output end of a differential amplifier, a source connected with the ground terminal, and a drain connected with a source of a fourth NMOS transistor having a gate connected with a reverse input end of the differential amplifier and with a second voltage source, and a drain connected with a forward input end and a first bias current source.

A power control circuit includes a negative feedback loop, and a radio frequency signal path including a first NMOS transistor having a gate configured as a radio frequency signal input end, a drain connected with a source of a second NMOS transistor, and a source connected with a ground terminal. A drain of the second NMOS transistor is configured as a radio frequency signal output end and connected with a first voltage source. The negative feedback loop includes a third NMOS transistor having a gate connected with an output end of a differential amplifier, a source connected with the ground terminal, and a drain connected with a source of a fourth NMOS transistor having a gate connected with a reverse input end of the differential amplifier and with a second voltage source, and a drain connected with a forward input end and a first bias current source.