Patent classifications
H03F3/193
INTERNAL TRANSMIT/RECEIVE SWITCH WITH HARDWARE REUSE
An apparatus includes a low-noise amplifier having an input and an output, a first switch coupled between the input of the low-noise amplifier and the output of the low-noise amplifier, and a transformer including a first inductor and a second inductor, wherein the first inductor is coupled to the output of the low-noise amplifier. The apparatus also includes a power amplifier having an input and an output, and a switching circuit coupled between the output of the power amplifier and the second inductor.
High-frequency power amplifier
A high-frequency power amplifier is configured in such a way as to include an input matching circuit, an amplifying element, an output matching circuit, a coupling circuit, a detection circuit, and an output terminal, and in such a way that either the input matching circuit or the output matching circuit has an active element, the detection circuit receives a signal outputted by the coupling circuit and outputs a control voltage into which the detection circuit converts the signal to the active element, and the active element changes the impedance of the active element in accordance with the control voltage outputted by the detection circuit, thereby changing the power of a signal outputted by either the input matching circuit having the active element or the output matching circuit having the active element, to change the power of a signal which the coupling circuit outputs to the output terminal.
High-frequency power amplifier
A high-frequency power amplifier is configured in such a way as to include an input matching circuit, an amplifying element, an output matching circuit, a coupling circuit, a detection circuit, and an output terminal, and in such a way that either the input matching circuit or the output matching circuit has an active element, the detection circuit receives a signal outputted by the coupling circuit and outputs a control voltage into which the detection circuit converts the signal to the active element, and the active element changes the impedance of the active element in accordance with the control voltage outputted by the detection circuit, thereby changing the power of a signal outputted by either the input matching circuit having the active element or the output matching circuit having the active element, to change the power of a signal which the coupling circuit outputs to the output terminal.
Ultra compact multi-band transmitter with robust AM-PM distortion self-suppression techniques
A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. An output passive network can further generate a flat-phase response between dual resonances of operation.
Ultra compact multi-band transmitter with robust AM-PM distortion self-suppression techniques
A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. An output passive network can further generate a flat-phase response between dual resonances of operation.
STACKED RF CIRCUIT TOPOLOGY USING TRANSISTOR DIE WITH THROUGH SILICON CARBIDE VIAS ON GATE AND/OR DRAIN
A radio frequency (RF) power amplifier device package includes a substrate and a first die attached to the substrate at a bottom surface of the first die. The first die includes top gate or drain contacts on a top surface of the first die opposite the bottom surface. At least one of the top gate or drain contacts is electrically connected to a respective bottom gate or drain contact on the bottom surface of the first die by a respective conductive via structure. An integrated interconnect structure, which is on the first die opposite the substrate, includes a first contact pad on the top gate contact or the top drain contact of the first die, and at least one second contact pad connected to a package lead, a contact of a second die, impedance matching circuitry, and/or harmonic termination circuitry.
STACKED RF CIRCUIT TOPOLOGY USING TRANSISTOR DIE WITH THROUGH SILICON CARBIDE VIAS ON GATE AND/OR DRAIN
A radio frequency (RF) power amplifier device package includes a substrate and a first die attached to the substrate at a bottom surface of the first die. The first die includes top gate or drain contacts on a top surface of the first die opposite the bottom surface. At least one of the top gate or drain contacts is electrically connected to a respective bottom gate or drain contact on the bottom surface of the first die by a respective conductive via structure. An integrated interconnect structure, which is on the first die opposite the substrate, includes a first contact pad on the top gate contact or the top drain contact of the first die, and at least one second contact pad connected to a package lead, a contact of a second die, impedance matching circuitry, and/or harmonic termination circuitry.
TUNABLE ATTENUATOR
In accordance with a first aspect of the present disclosure, a tunable attenuator is provided, comprising: one or more transformer windings configured to facilitate attenuating a signal; one or more conductive loops provided underneath the transforming windings; a controller configured to control an amount of current flowing through the conductive loops, thereby providing a tunable attenuation of said signal. In accordance with a second aspect of the present disclosure, a corresponding method of producing a tunable attenuator is conceived.
TUNABLE ATTENUATOR
In accordance with a first aspect of the present disclosure, a tunable attenuator is provided, comprising: one or more transformer windings configured to facilitate attenuating a signal; one or more conductive loops provided underneath the transforming windings; a controller configured to control an amount of current flowing through the conductive loops, thereby providing a tunable attenuation of said signal. In accordance with a second aspect of the present disclosure, a corresponding method of producing a tunable attenuator is conceived.
Tunable bandpass low noise amplifier
A tunable bandpass low-noise amplifier (LNA). The LNA includes a plurality of N-path filters and a plurality of cascode amplifiers. The cascode amplifiers are configured to amplify an input signal. Each N-path filter is coupled to a different one of the plurality of cascode amplifiers. The plurality of N-path filters are driven by local oscillator (LO) signals having different frequencies, and output nodes of the plurality of cascode amplifiers are coupled in parallel. The frequencies of the LO signals may be symmetrically spaced around a desired frequency (f.sub.LO). Each N-path filter may be coupled to a source of the common-gate device of the coupled cascode amplifier. The LO signals may be generated by a digital-to-time converter (DTC)-based frequency synthesizer. The frequencies of the LO signals supplied to the N-path filters may be adjusted to tune the bandwidth of the bandpass LNA.