Each sub-stage of an amplifier stage includes a resistor coupled to another resistor in an adjacent sub-stage or to a high DC voltage, the resistor and the other resistor forming part of a string of equal valued resistors; an FET having a source coupled to a cathode of a Zener diode coupled in parallel with a capacitor, a drain coupled to another sub-stage in the string, an output node of the amplifier stage, or the high DC voltage; and at least one active device coupled to a gate of the FET and coupled to the resistor for providing high impedance between a voltage on a node of the resistor and the gate of the FET and a low impedance between the at least one active device and the gate of the FET, the at least one active device coupled to both the cathode and an anode of the Zener diode.

A transistor stack can include a combination of floating and body tied devices. Improved performance of the RF amplifier can be obtained by using a single body tied device as the input transistor of the stack, or as the output transistor of the stack, while other transistors of the stack are floating transistors. Transient response of the RF amplifier can be improved by using all body tied devices in the stack.

A transistor stack can include a combination of floating and body tied devices. Improved performance of the RF amplifier can be obtained by using a single body tied device as the input transistor of the stack, or as the output transistor of the stack, while other transistors of the stack are floating transistors. Transient response of the RF amplifier can be improved by using all body tied devices in the stack.

A distributed amplifier system constituted of: an input transmission line exhibit a plurality of sections; an output transmission line; an amplifier stage, an output of the amplifier stage coupled to the output transmission line and an input of the amplifier stage coupled to the input transmission line between a respective pair of the plurality of sections; a PIN diode coupled between a first end of the input transmission line and a common potential; and a circuitry coupled between a second end of the input transmission line and the common potential, the second end opposing the first end, such that there is a direct current (DC) flow through the first unidirectional electronic valve, the input transmission line and the circuitry.

A distributed amplifier system constituted of: an input transmission line exhibit a plurality of sections; an output transmission line; an amplifier stage, an output of the amplifier stage coupled to the output transmission line and an input of the amplifier stage coupled to the input transmission line between a respective pair of the plurality of sections; a PIN diode coupled between a first end of the input transmission line and a common potential; and a circuitry coupled between a second end of the input transmission line and the common potential, the second end opposing the first end, such that there is a direct current (DC) flow through the first unidirectional electronic valve, the input transmission line and the circuitry.

A transformer has a first inductor that includes a first port. The transformer also has a second inductor magnetically coupled to the first inductor. The second inductor includes a second port. The second inductor includes a first portion configured to permit current flow in a clockwise direction and a second portion configured to permit current flow in a counter-clockwise direction. The transformer also has a third inductor magnetically coupled to the first inductor. The third inductor includes a third port. The counter-clockwise direction is opposite the clockwise direction to reduce magnetic coupling between the second inductor and the third inductor based on magnetic coupling cancellation.

In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.

In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.

A signal processing circuit is described. The signal processing circuit includes a power amplifier. The power amplifier is composed of at least a p-type metal oxide semiconductor (PMOS) transistor and an n-type metal oxide semiconductor (NMOS) transistor. The signal processing circuit also includes a driver circuit. The driver circuit includes a first linear voltage regulator having an output coupled to a power supply input of a second linear voltage regulator. The first linear voltage regulator and the second linear voltage regulator are each coupled to the power amplifier.

A signal processing circuit is described. The signal processing circuit includes a power amplifier. The power amplifier is composed of at least a p-type metal oxide semiconductor (PMOS) transistor and an n-type metal oxide semiconductor (NMOS) transistor. The signal processing circuit also includes a driver circuit. The driver circuit includes a first linear voltage regulator having an output coupled to a power supply input of a second linear voltage regulator. The first linear voltage regulator and the second linear voltage regulator are each coupled to the power amplifier.