The disclosed embodiments relate to the design of a system that implements an up-conversion mixer. This system includes a regulator-based linearized transconductance (g.sub.m) stage, which converts a differential intermediate frequency (IF) voltage signal into a corresponding pair of IF currents. It also includes a pair of current mirrors, which duplicates the pair of IF currents into sources of a set of switching transistors. The set of switching transistors uses a differential local oscillator (LO) signal to gate the duplicated pair of IF currents to produce a differential radio frequency (RF) output signal. Finally, a combination of capacitors and/or inductors is coupled to common source nodes of the set of switching transistors to suppress higher order harmonics in an associated common source node voltage signal.

A wide modulation bandwidth radio frequency (RF) circuit is provided. In examples discussed herein, the RF front-end circuit includes a tracker circuit configured to generate a modulated voltage at a wide modulation bandwidth. The modulated voltage can be used by an amplifier circuit(s) for amplifying an RF signal(s). Notably, the tracker circuit may have inherent frequency-dependent impedance that can interact with a load current of the amplifier circuit(s) to cause degradation in the modulated voltage, which can further lead to distortions in an RF offset spectrum. In this regard, a notch circuit is provided and configured to operate at an appropriate notch frequency and a notch bandwidth to filter the modulated voltage in the RF offset spectrum. As a result, it may be possible to reduce the distortions caused by the modulated voltage degradation in the RF offset spectrum, thus helping to improve linearity and efficiency of the amplifier circuit(s).

A wide modulation bandwidth radio frequency (RF) circuit is provided. In examples discussed herein, the RF front-end circuit includes a tracker circuit configured to generate a modulated voltage at a wide modulation bandwidth. The modulated voltage can be used by an amplifier circuit(s) for amplifying an RF signal(s). Notably, the tracker circuit may have inherent frequency-dependent impedance that can interact with a load current of the amplifier circuit(s) to cause degradation in the modulated voltage, which can further lead to distortions in an RF offset spectrum. In this regard, a notch circuit is provided and configured to operate at an appropriate notch frequency and a notch bandwidth to filter the modulated voltage in the RF offset spectrum. As a result, it may be possible to reduce the distortions caused by the modulated voltage degradation in the RF offset spectrum, thus helping to improve linearity and efficiency of the amplifier circuit(s).

With a conventional high-frequency measurement method, it is difficult to accurately grasp variation in high-frequency performance when a high-frequency signal is input to an amplifier. One aspect of a high-frequency measurement method according to the present invention includes generating a test signal (TS), which is a sine-wave signal having a predetermined frequency, in which a period () during which the power level is at a first power level and a period (T-) during which the power level is at a second power level lower than the first power level are periodically repeated, inputting the test signal (TS) to a device under test (10) as an input signal, and measuring the difference between an output signal (OUT) of the device under test (10) and an ideal value of the output signal (OUT).

With a conventional high-frequency measurement method, it is difficult to accurately grasp variation in high-frequency performance when a high-frequency signal is input to an amplifier. One aspect of a high-frequency measurement method according to the present invention includes generating a test signal (TS), which is a sine-wave signal having a predetermined frequency, in which a period () during which the power level is at a first power level and a period (T-) during which the power level is at a second power level lower than the first power level are periodically repeated, inputting the test signal (TS) to a device under test (10) as an input signal, and measuring the difference between an output signal (OUT) of the device under test (10) and an ideal value of the output signal (OUT).

When a potential difference V.sub.1 between a source terminal of an E-type FET (11) and a source terminal of a D-type FET (12) is larger than a threshold voltage V.sub.th, a protection circuit (13) starts an operation to reduce the potential difference V.sub.1 such that the potential difference V.sub.1 is smaller than the threshold voltage V.sub.th. This makes it possible to prevent destruction of the E-type FET (11) even when a signal to be amplified is an RF signal.

When a potential difference V.sub.1 between a source terminal of an E-type FET (11) and a source terminal of a D-type FET (12) is larger than a threshold voltage V.sub.th, a protection circuit (13) starts an operation to reduce the potential difference V.sub.1 such that the potential difference V.sub.1 is smaller than the threshold voltage V.sub.th. This makes it possible to prevent destruction of the E-type FET (11) even when a signal to be amplified is an RF signal.

A variable gain amplifier includes a pair of amplification and recentering branches. Each branch includes: a resistive element of variable resistance configured to be driven by a variable gain controller; a digitally-driven variable current source configured to be driven by a compensation current driver unit; a first transistor comprising a gate terminal coupled to an input terminal of the variable gain amplifier, and a source terminal coupled to a first terminal of the resistive element; and a second transistor comprising a gate terminal coupled to a drain terminal of the first transistor, and a source terminal coupled to an output terminal of the variable gain amplifier.

An amplifier circuit configuration capable of processing non-contiguous intra-band carrier aggregate (CA) signals using amplifiers is disclosed herein. In some cases, each of a plurality of amplifiers is an amplifier configured as a cascode (i.e., a two-stage amplifier having two transistors, the first configured as a common source input transistor, e.g., input field effect transistor (FET), and the second configured in a common gate configuration as a cascode output transistor, (e.g. cascode output FET). In other embodiments, the amplifier may have additional transistors (i.e., more than two stages and/or stacked transistors). The amplifier circuit configuration can be operated in either single mode or split mode. A switchable coupling is placed between the drain of the input FETs of each amplifier within the amplifier circuit configuration. During split mode, the coupling is added to the circuit to allow some of the signal present at the drain of each input FET to be coupled to the drain of the other input FET.

An amplifier circuit configuration capable of processing non-contiguous intra-band carrier aggregate (CA) signals using amplifiers is disclosed herein. In some cases, each of a plurality of amplifiers is an amplifier configured as a cascode (i.e., a two-stage amplifier having two transistors, the first configured as a common source input transistor, e.g., input field effect transistor (FET), and the second configured in a common gate configuration as a cascode output transistor, (e.g. cascode output FET). In other embodiments, the amplifier may have additional transistors (i.e., more than two stages and/or stacked transistors). The amplifier circuit configuration can be operated in either single mode or split mode. A switchable coupling is placed between the drain of the input FETs of each amplifier within the amplifier circuit configuration. During split mode, the coupling is added to the circuit to allow some of the signal present at the drain of each input FET to be coupled to the drain of the other input FET.