Patent classifications
H03F3/193
Source switched split LNA
A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a common source configured input FET and a common gate configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. Further switches used for switching degeneration inductors, gate capacitors and gate to ground caps for each legs can be used to further improve the matching performance of the invention.
Source switched split LNA
A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a common source configured input FET and a common gate configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. Further switches used for switching degeneration inductors, gate capacitors and gate to ground caps for each legs can be used to further improve the matching performance of the invention.
Envelope tracking amplifier circuit
An envelope tracking (ET) amplifier circuit is provided. In examples discussed herein, an amplifier circuit(s) is configured to amplify a radio frequency (RF) signal based on an ET modulated voltage. A tracker circuit is configured to generate the ET modulated voltage based on a number of target voltage amplitudes derived from a time-variant signal envelope of the RF signal. However, the tracker circuit can cause the ET modulated voltage to deviate from the target voltage amplitudes due to various impedance variations. In this regard, a voltage memory digital pre-distortion (mDPD) circuit digitally pre-distorts the target voltage amplitudes based on the time-variant signal envelope such that the ET modulated voltage can closely track the target voltage amplitudes. As such, it is possible to mitigate ET modulated voltage deviation, thus helping to improve overall linearity performance of the ET amplifier circuit.
Envelope tracking amplifier circuit
An envelope tracking (ET) amplifier circuit is provided. In examples discussed herein, an amplifier circuit(s) is configured to amplify a radio frequency (RF) signal based on an ET modulated voltage. A tracker circuit is configured to generate the ET modulated voltage based on a number of target voltage amplitudes derived from a time-variant signal envelope of the RF signal. However, the tracker circuit can cause the ET modulated voltage to deviate from the target voltage amplitudes due to various impedance variations. In this regard, a voltage memory digital pre-distortion (mDPD) circuit digitally pre-distorts the target voltage amplitudes based on the time-variant signal envelope such that the ET modulated voltage can closely track the target voltage amplitudes. As such, it is possible to mitigate ET modulated voltage deviation, thus helping to improve overall linearity performance of the ET amplifier circuit.
Systems and methods providing a matching circuit that bypasses a parasitic impedance
A circuit including a radio frequency (RF) amplifier including a transistor configured to receive an RF signal at its control terminal, a capacitor coupled to a first terminal of the transistor, an inductor coupled to a second terminal of the transistor, wherein the capacitor and inductor form a loop from the first terminal to the second terminal, wherein the loop bypasses a parasitic inductance between the second terminal and ground.
Systems and methods providing a matching circuit that bypasses a parasitic impedance
A circuit including a radio frequency (RF) amplifier including a transistor configured to receive an RF signal at its control terminal, a capacitor coupled to a first terminal of the transistor, an inductor coupled to a second terminal of the transistor, wherein the capacitor and inductor form a loop from the first terminal to the second terminal, wherein the loop bypasses a parasitic inductance between the second terminal and ground.
Apparatus for and method of a supply modulator for a power amplifier
An apparatus for and method of a supply modulator (SM) for a power amplifier (PA) is provided. The apparatus includes a buck-boost converter, including a supply input connected to a battery voltage (Vbat), and an output; and a buck converter, including a supply input connected to Vbat, an input connected to the output of the buck-boost converter, and an output.
Apparatus for and method of a supply modulator for a power amplifier
An apparatus for and method of a supply modulator (SM) for a power amplifier (PA) is provided. The apparatus includes a buck-boost converter, including a supply input connected to a battery voltage (Vbat), and an output; and a buck converter, including a supply input connected to Vbat, an input connected to the output of the buck-boost converter, and an output.
LOW NOISE AMPLIFIER WITH REACTIVE FEEDBACK
An amplifier, comprising: an amplifying element having an input side and an output side; a first transformer on the output side of the amplifying element arranged to mutually couple a fraction of the output current from the amplifying element onto the input side of the amplifying element; a second transformer on the input side of the amplifying element arranged to increase the input voltage on the input side via mutual coupling of its primary and secondary windings; wherein a primary winding of the first transformer is connected to an output of the amplifying element; wherein a secondary winding of the first transformer is ac connected to a secondary winding of the second transformer; and wherein the primary winding of the first transformer is dc blocked from the secondary winding of the second transformer. The negative and the positive reactive feedback loops are not formed from the same trifilar transformer.
SWITCH CIRCUITS HAVING INTEGRATED OVERDRIVE PROTECTION AND RELATED TRANSMIT/RECEIVE CIRCUITS AND MMIC AMPLIFIERS
Monolithic microwave integrated circuits are provided that include a substrate, a transmit/receive selection device that is formed on the substrate, a high power amplifier formed on the substrate and coupled to a first RF port of the transmit/receive selection device, a low noise amplifier formed on the substrate and coupled to a second RF port of the transmit/receive selection device and a protection circuit that is coupled to a first control port of the transmit/receive selection device.