A low noise amplifier includes a first input transistor coupled to an input signal and a second input transistor coupled to the input signal. The low noise amplifier also includes a first output transistor, coupled between the first input transistor and a first carrier aggregation load, configured to connect the first input transistor to the first carrier aggregation load. Additionally, the low noise amplifier includes a second output transistor, coupled between the first input transistor and a second carrier aggregation load, configured to connect the first input transistor to the second carrier aggregation load. Further, the low noise amplifier includes a third output transistor, coupled between the second input transistor and the second carrier aggregation load, configured to connect the second input transistor to the second carrier aggregation load. Also included are a method of operating a low noise amplifier and an extended carrier low noise amplifier.

A low noise amplifier includes a first input transistor coupled to an input signal and a second input transistor coupled to the input signal. The low noise amplifier also includes a first output transistor, coupled between the first input transistor and a first carrier aggregation load, configured to connect the first input transistor to the first carrier aggregation load. Additionally, the low noise amplifier includes a second output transistor, coupled between the first input transistor and a second carrier aggregation load, configured to connect the first input transistor to the second carrier aggregation load. Further, the low noise amplifier includes a third output transistor, coupled between the second input transistor and the second carrier aggregation load, configured to connect the second input transistor to the second carrier aggregation load. Also included are a method of operating a low noise amplifier and an extended carrier low noise amplifier.

Devices and methods for implementing an RF integrated circuit device operatively configured to provide the function of RF power splitter with programmable output phase shift are described. Configurable and adjustable phase shift units for use in such IC device are also described.

Devices and methods for implementing an RF integrated circuit device operatively configured to provide the function of RF power splitter with programmable output phase shift are described. Configurable and adjustable phase shift units for use in such IC device are also described.

A low noise amplifier (LNA) includes a first transistor and a second transistor. A source of the second transistor is connected to a drain of the first transistor. The LNA further includes a feedback transformer. A gate of the first transistor is connected to a primary winding of the feedback transformer and a gate of the second transistor is connected to a secondary winding of the feedback transformer.

A low noise amplifier (LNA) includes a first transistor and a second transistor. A source of the second transistor is connected to a drain of the first transistor. The LNA further includes a feedback transformer. A gate of the first transistor is connected to a primary winding of the feedback transformer and a gate of the second transistor is connected to a secondary winding of the feedback transformer.

A power amplifier including a power amplifier stage. The power amplifier stage may be configured to receive a signal, amplify the signal at saturation with substantially zero amplitude-phase (AM-PM) distortion, and output the amplified signal as an output signal. The power amplifier may be a single stage power amplifier or a multi-stage power amplifier.

A power amplifier including a power amplifier stage. The power amplifier stage may be configured to receive a signal, amplify the signal at saturation with substantially zero amplitude-phase (AM-PM) distortion, and output the amplified signal as an output signal. The power amplifier may be a single stage power amplifier or a multi-stage power amplifier.

A circuit includes a transistor, a signal generating circuit and a noise sensing circuit. The signal generating circuit is arranged to provide an input signal. The noise sensing circuit is coupled to the transistor and the signal generating circuit, and the noise sensing circuit is arranged for receiving the input signal provided by the signal generating circuit to generate an output signal to the transistor, wherein a signal component of the output signal generated by the noise sensing circuit cancels out a signal component of the input signal provided by the signal generating circuit, and the output signal and the input signal have opposite polarities.

Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.