In one embodiment, a dual-mode power amplifier that can operate in different modes includes: a first pair of metal oxide semiconductor field effect transistors (MOSFETs) to receive and pass a constant envelope signal; a second pair of MOSFETs to receive and pass a variable envelope signal, where first terminals of the first pair of MOSFETs are coupled to first terminals of the second pair of MOSFETs, and second terminals of the first pair of MOSFETs are coupled to. second terminals of the second pair of MOSFETs; and a shared MOSFET stack coupled to the first pair of MOSFETs and the second pair of MOSFETs.

An active electronic device that enables bidirectional communication over a single antenna or path is disclosed. The device may be characterized by a forward path (from an input to an antenna port) offering high gain, and a reverse path (to a receiver port) that can be configured as an finite impulse response (“FIR”) filter. An amplifier of the device is disclosed, the amplifier allowing for tuning of output resistance using passive mixers.

An active electronic device that enables bidirectional communication over a single antenna or path is disclosed. The device may be characterized by a forward path (from an input to an antenna port) offering high gain, and a reverse path (to a receiver port) that can be configured as an finite impulse response (“FIR”) filter. An amplifier of the device is disclosed, the amplifier allowing for tuning of output resistance using passive mixers.

A semiconductor structure for RF applications comprises: a first μTP GaN transistor on an SOI wafer or die; and a first resistor connected to the gate of said first transistor.

A semiconductor structure for RF applications comprises: a first μTP GaN transistor on an SOI wafer or die; and a first resistor connected to the gate of said first transistor.

An amplitude modulation-phase modulation compensation circuit includes a detection circuit, a reconfigurable current control voltage source circuit and a phase shifting circuit, in which, the detection circuit is configured to detect the power of an input signal and output a control current according to the power of the input signal when the power of the input signal is greater than a preset power threshold; the reconfigurable current control voltage source circuit is configured to generate a bias voltage according to the control current; the phase shifting circuit is configured to compensate the AM-PM distortion of the radio frequency power amplifier according to the bias voltage. In this way, by the compensation circuit, when the power of the input signal is greater than a preset power threshold, the AM-PM distortion of the radio frequency power amplifier can be compensated according to the power of the input signal.

A bias circuit includes a mirror current source and a current-to-voltage converter. A first terminal of the mirror current source is connected to a supply voltage terminal, a second terminal of the mirror current source is connected to a reference voltage terminal, and a third terminal of the mirror current source is connected to the current-to-voltage converter. A mirror current source is configured to acquire a supply voltage transmitted at the supply voltage terminal through the first terminal, acquire a reference voltage transmitted at the reference voltage terminal through the second terminal, and regulate the supply voltage by using the reference voltage and a preset parameter to obtain a mirror current corresponding to the supply voltage. The preset parameter is parameter information of the mirror current source. The current-to-voltage converter is configured to convert the mirror current into a voltage to provide a bias voltage based on the voltage.

Amplifier circuits, radio communication circuits, radio communication devices, and methods provided in this disclosure provide an amplifier circuit. The amplifier circuit may include an amplifier configured to amplify an input signal to provide an output signal. The amplifier circuit may further include an amplifier stack including a first transistor coupled to the amplifier. The amplifier stack may be configured to receive the output signal to amplify the output signal. The amplifier stack may be configured to receive an input control signal to control the first transistor based on an envelope of the input signal.

Methods and devices used in mobile receiver front end to support multiple paths and multiple frequency bands are described. The presented devices and methods provide benefits of scalability, frequency band agility, as well as size reduction by using one low noise amplifier per simultaneous outputs. Based on the disclosed teachings, variable gain amplification of multiband signals is also presented.

A harmonic processing circuit includes a first inductor having a first end connected to a connection line connected between an amplifier and an impedance matching circuit, and a second end connected to a first node, a first transmission line having a third end connected to the first node and a fourth end connected to a second node, and a parallel resonant circuit having a fifth end connected to the second node and a sixth end connected to a reference potential, wherein a second inductor and a first capacitor are connected in parallel between the fifth end and the sixth end, wherein when the first inductor is viewed from the connection line, an impedance at a frequency of a fundamental wave amplified by the amplifier is larger than an impedance at a frequency of a second harmonic having twice the frequency of the fundamental wave.