A low noise amplifier and a method of controlling an amplifier circuit that can enable detection of a fault are provided. The low noise amplifier includes an amplifier circuit. The amplifier circuit includes an amplification transistor configured to amplify a signal input from an input terminal and to output the amplified signal to a first node, a current mirror circuit configured to supply a bias current to the amplification transistor, a resistor provided on a feedback path for feeding an output of the first node back to the input terminal, and a first switch provided on the feedback path and configured to set up or cut off the feedback path. The feedback path is cut off by the first switch when detection of a fault of the amplification transistor is performed.

A front end module (FEM) integrated circuit (IC) architecture that uses the same LNA in each of several frequency bands extending over a wide frequency range. In some embodiments, switched impedance circuits distributed throughout the front end circuit allow selection of the frequency response and impedances that are optimized for particular performance parameters targeted for a desired device characteristic. Such switched impedance circuits tune the output and input impedance match and adjust the gain of the LNA for specific operating frequencies and gain targets. In addition, adjustments to the bias of the LNA can be used to optimize performance trade-offs between the total direct current (DC) power dissipated versus radio frequency (RF) performance. By selecting appropriate impedances throughout the circuit using switched impedance circuits, the LNA can be selectively tuned to operate optimally at a selected bias for operation within selected frequency bands.

A front end module (FEM) integrated circuit (IC) architecture that uses the same LNA in each of several frequency bands extending over a wide frequency range. In some embodiments, switched impedance circuits distributed throughout the front end circuit allow selection of the frequency response and impedances that are optimized for particular performance parameters targeted for a desired device characteristic. Such switched impedance circuits tune the output and input impedance match and adjust the gain of the LNA for specific operating frequencies and gain targets. In addition, adjustments to the bias of the LNA can be used to optimize performance trade-offs between the total direct current (DC) power dissipated versus radio frequency (RF) performance. By selecting appropriate impedances throughout the circuit using switched impedance circuits, the LNA can be selectively tuned to operate optimally at a selected bias for operation within selected frequency bands.

Embodiments disclosed herein describe a wireless power receiver including a synchronous transistor rectifier using a Class-E or a Class-F amplifier. The wireless power receiver includes at least one radio frequency (RF) antenna configured to generate an alternating current (AC) waveform from received RF waves. The wireless power receiver further includes a power line configured to carry a first signal based on the AC current generated by the least one RF antenna, and a tap-line coupled to the power line, the tap-line being configured to carry a second signal. The second signal is based on the AC current generated by the least one RF antenna and distinct from the first signal. The wireless power receiver also includes a transistor coupled to at least the power line and the tap-line. The transistor is configured to provide a direct current (DC) waveform to a load based on the first and second signals.

Embodiments disclosed herein describe a wireless power receiver including a synchronous transistor rectifier using a Class-E or a Class-F amplifier. The wireless power receiver includes at least one radio frequency (RF) antenna configured to generate an alternating current (AC) waveform from received RF waves. The wireless power receiver further includes a power line configured to carry a first signal based on the AC current generated by the least one RF antenna, and a tap-line coupled to the power line, the tap-line being configured to carry a second signal. The second signal is based on the AC current generated by the least one RF antenna and distinct from the first signal. The wireless power receiver also includes a transistor coupled to at least the power line and the tap-line. The transistor is configured to provide a direct current (DC) waveform to a load based on the first and second signals.

An amplifying apparatus is provided, which includes a power-source main line, a plurality of amplifying control devices which include an amplifier, a power-source branch line, an over current protector. The amplifier amplifies a high-frequency signal. The power-source branch line is branched from the power-source main line. The over current protector disposed for the power-source branch line is connected to the amplifier and configured to disconnect the power-source branch line based on drive current flowing through the amplifier from the power-source branch line. The power-source main line is common to the plurality of amplifying control devices.

An amplifying apparatus is provided, which includes a power-source main line, a plurality of amplifying control devices which include an amplifier, a power-source branch line, an over current protector. The amplifier amplifies a high-frequency signal. The power-source branch line is branched from the power-source main line. The over current protector disposed for the power-source branch line is connected to the amplifier and configured to disconnect the power-source branch line based on drive current flowing through the amplifier from the power-source branch line. The power-source main line is common to the plurality of amplifying control devices.

A high-frequency device includes a metal base, a dielectric substrate mounted on the metal base, an insulator layer provided on the metal base, covering the dielectric substrate, and having a dielectric constant smaller than that of the dielectric substrate, and a first line that overlaps the dielectric substrate as seen from a thickness direction of the insulator layer and is provided on an upper surface of the insulator layer to form a first microstrip line.

Embedded blocking capacitor structures for wideband amplifier circuits are disclosed. A wideband amplifier circuit includes transistors that output radio frequency (RF) signals. An embedded blocking capacitor structure is operably connected between the terminals of the transistors and an RF output. The embedded blocking capacitor structure distributes a bias voltage to the terminals of the transistors and blocks the bias voltage from passing to the RF output. The embedded blocking capacitor structure also propagates an RF signal to an RF output.

A transistor stack can include a combination of floating and body tied devices. Improved performance of the RF amplifier can be obtained by using a single body tied device as the input transistor of the stack, or as the output transistor of the stack, while other transistors of the stack are floating transistors. Transient response of the RF amplifier can be improved by using all body tied devices in the stack.