Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding wires bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding wires may be copper bonding wires having a diameter of between about 10 microns and about 100 microns.

In order to operate a power amplifier for synthesizing a plurality of amplifier circuits with high efficiency, the gate voltages of the field-effect transistors (FETs) of the plurality of amplifier circuits are adjusted according to an individual difference in saturated power between the amplifier circuits. Specifically, the output ratios of the amplifier circuits (AMP-4, 8) with low saturated power are reduced, whereas the output ratios of the amplifier circuits (AMP-2, 6) with high saturated power are increased. Thus, a device is operated with high efficiency.

An amplification circuit includes a first amplifier provided between an input terminal and an output terminal and a second amplifier connected in parallel with the first amplifier between the input terminal and the output terminal. The first amplifier includes a transistor and a transistor, which are cascode connected with each other. The second amplifier includes a transistor. The transistor has a gate connected to the input terminal, a source connected to ground, and a drain. The transistor has a gate, a source connected to the drain of the transistor, and a drain connected to the output terminal. The transistor has a gate connected to the input terminal, a source connected to ground, and a drain connected to the output terminal.

An amplification circuit includes a first amplifier provided between an input terminal and an output terminal and a second amplifier connected in parallel with the first amplifier between the input terminal and the output terminal. The first amplifier includes a transistor and a transistor, which are cascode connected with each other. The second amplifier includes a transistor. The transistor has a gate connected to the input terminal, a source connected to ground, and a drain. The transistor has a gate, a source connected to the drain of the transistor, and a drain connected to the output terminal. The transistor has a gate connected to the input terminal, a source connected to ground, and a drain connected to the output terminal.

Various methods and circuital arrangements for reducing a turn ON time of a cascode amplifier are presented. According to one aspect, a configurable switching arrangement coupled to a cascode transistor of the amplifier shorts a gate of the cascode transistor to a reference ground during an inactive mode of operation of the amplifier. During an active mode of operation of the amplifier, the configurable switching arrangement couples a gate capacitor to the gate of the cascode transistor that is pre-charged to a voltage that is higher than a gate biasing voltage to the cascode transistor, which ensures that cascode transistor turns ON much quicker than the traditional method of grounding the cap, hence provide a final current flow through the cascode amplifier in a shorter time by not limiting the turn ON time of the input transistor. The gate biasing voltage is coupled to the gate capacitor via a resistor. A relationship between the pre-charged voltage, and minimum saturation voltages and threshold voltages of the transistors of the cascode amplifier is also provided.

Various methods and circuital arrangements for reducing a turn ON time of a cascode amplifier are presented. According to one aspect, a configurable switching arrangement coupled to a cascode transistor of the amplifier shorts a gate of the cascode transistor to a reference ground during an inactive mode of operation of the amplifier. During an active mode of operation of the amplifier, the configurable switching arrangement couples a gate capacitor to the gate of the cascode transistor that is pre-charged to a voltage that is higher than a gate biasing voltage to the cascode transistor, which ensures that cascode transistor turns ON much quicker than the traditional method of grounding the cap, hence provide a final current flow through the cascode amplifier in a shorter time by not limiting the turn ON time of the input transistor. The gate biasing voltage is coupled to the gate capacitor via a resistor. A relationship between the pre-charged voltage, and minimum saturation voltages and threshold voltages of the transistors of the cascode amplifier is also provided.

A control method of a minimum power input applicable to a wireless power transfer system including a power transmission unit and at least one power receiving unit is provided. The power transmission unit is electrically connected with a control voltage signal and an input voltage signal and accordingly generates the minimum power input. The power transmission unit transmits the minimum power input wirelessly through a wireless transmission to the at least one power receiving unit for receiving. By adjusting the input voltage signal, the duty ratio and resonant frequency of the control voltage signal, the present invention ensures an optimal power transmission efficiency of the wireless power transmission system. Moreover, parameters of a charge pump reservoir and gate driving circuit can be further designed in view of the trend feedback of its gate drive waveforms so as to optimize the effect of the proposed invention.

A low noise amplifier includes a transistor that amplifies and outputs inputted signals, a buffer that propagates outputs of the transistor to a subsequent circuit, a variable current source that supplies a bias current to the transistor, and a variable resistor connected between a gate terminal of the transistor and a terminal of the transistor to which the variable current source is connected, wherein in a case in which the inputted signals do not pass through the low noise amplifier, the buffer blocks outputs of the transistor, and settings of the variable current source and the variable resistor differ from settings in a case in which the inputted signals pass through the low noise amplifier.

A low noise amplifier includes a transistor that amplifies and outputs inputted signals, a buffer that propagates outputs of the transistor to a subsequent circuit, a variable current source that supplies a bias current to the transistor, and a variable resistor connected between a gate terminal of the transistor and a terminal of the transistor to which the variable current source is connected, wherein in a case in which the inputted signals do not pass through the low noise amplifier, the buffer blocks outputs of the transistor, and settings of the variable current source and the variable resistor differ from settings in a case in which the inputted signals pass through the low noise amplifier.

Described are concepts, systems, circuits and techniques directed toward methods and apparatus for generating one or more pulse width modulated (PWM) waveforms with the ability to dynamically control pulse width and phase with respect to a reference signal.