Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are possible where the amplifier is configured to operate in at least an active mode and a standby mode. Circuital arrangements can reduce bias circuit standby current during operation in the standby mode while allowing a quick recovery to normal operating conditions of the amplifier. Biasing an input transistor of the stacked transistors can be obtained by using a replica stack circuit.

Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are possible where the amplifier is configured to operate in at least an active mode and a standby mode. Circuital arrangements can reduce bias circuit standby current during operation in the standby mode while allowing a quick recovery to normal operating conditions of the amplifier. Biasing an input transistor of the stacked transistors can be obtained by using a replica stack circuit.

Radio frequency (RF) amplifiers with overload protection are provided herein. In certain configurations, an RF amplifier system includes an RF amplifier that receives an RF signal from an input terminal. The RF amplifier includes an amplification field-effect transistor (FET) having a gate that receives the RF signal, and a degeneration circuit connected between a source of the amplifier FET and a ground voltage. The RF amplifier system further includes an electrostatic discharge protection circuit including a plurality of protection diodes electrically connected in series between the input terminal and the ground voltage, and a detector having an input connected along an electrical path through the plurality of protection diodes and an output that generates a detection signal operable to control an amount of degeneration provided by the degeneration circuit.

Radio frequency (RF) amplifiers with overload protection are provided herein. In certain configurations, an RF amplifier system includes an RF amplifier that receives an RF signal from an input terminal. The RF amplifier includes an amplification field-effect transistor (FET) having a gate that receives the RF signal, and a degeneration circuit connected between a source of the amplifier FET and a ground voltage. The RF amplifier system further includes an electrostatic discharge protection circuit including a plurality of protection diodes electrically connected in series between the input terminal and the ground voltage, and a detector having an input connected along an electrical path through the plurality of protection diodes and an output that generates a detection signal operable to control an amount of degeneration provided by the degeneration circuit.

An amplifier circuit configuration capable of processing non-contiguous intra-band carrier aggregate (CA) signals using amplifiers is disclosed herein. In some cases, each of a plurality of amplifiers is an amplifier configured as a cascode (i.e., a two-stage amplifier having two transistors, the first configured as a “common source” input transistor, e.g., input field effect transistor (FET), and the second configured in a “common gate” configuration as a cascode output transistor, (e.g. cascode output FET). In other embodiments, the amplifier may have additional transistors (i.e., more than two stages and/or stacked transistors). The amplifier circuit configuration can be operated in either single mode or split mode. A switchable coupling is placed between the drain of the input FETs of each amplifier within the amplifier circuit configuration. During split mode, the coupling is added to the circuit to allow some of the signal present at the drain of each input FET to be coupled to the drain of the other input FET.

An amplifier circuit configuration capable of processing non-contiguous intra-band carrier aggregate (CA) signals using amplifiers is disclosed herein. In some cases, each of a plurality of amplifiers is an amplifier configured as a cascode (i.e., a two-stage amplifier having two transistors, the first configured as a “common source” input transistor, e.g., input field effect transistor (FET), and the second configured in a “common gate” configuration as a cascode output transistor, (e.g. cascode output FET). In other embodiments, the amplifier may have additional transistors (i.e., more than two stages and/or stacked transistors). The amplifier circuit configuration can be operated in either single mode or split mode. A switchable coupling is placed between the drain of the input FETs of each amplifier within the amplifier circuit configuration. During split mode, the coupling is added to the circuit to allow some of the signal present at the drain of each input FET to be coupled to the drain of the other input FET.

An amplifier circuit includes a voltage-to-current conversion circuit and a current-to-voltage conversion circuit. The voltage-to-current conversion circuit generates a current signal according to an input voltage signal, and includes an operational transconductance amplifier (OTA) used to output the current signal at an output port of the OTA. The current-to-voltage conversion circuit generates an output voltage signal according to the current signal, and includes a linear amplifier (LA), wherein an input port of the LA is coupled to the output port of the OTA, and the output voltage signal is derived from an output signal at an output port of the LA.

An amplifier circuit is disclosed. The amplifier circuit includes an input terminal configured to receive an input signal, an output terminal configured to transmit an output signal, and a first signal path including a first amplifying circuit, where the first amplifying circuit is configured to receive the input signal and to transmit a first amplified output to the output terminal, and where the first amplified output includes first amplifier circuit harmonic noise. The amplifier circuit also includes a second signal path including a second amplifying circuit, where the second amplifying circuit receives the input signal and transmits a second amplified output to the output terminal, and where the second amplified output includes second amplifier circuit harmonic noise. The output signal includes the first and second amplified outputs, and the first amplifying circuit harmonic noise is at least partially canceled by the second amplifying circuit harmonic noise in the output signal.

Gallium nitride based RF transistor amplifiers include a semiconductor structure having a gallium nitride based channel layer and a gallium nitride based barrier layer thereon, and are configured to operate at a specific direct current drain-to-source bias voltage. These amplifiers are configured to have a normalized drain-to-gate capacitance at the direct current drain-to-source bias voltage, and to have a second normalized drain-to-gate capacitance at two-thirds the direct current drain-to-source bias voltage, where the second normalized drain-to-gate capacitance is less than twice the first normalized drain-to-gate capacitance.

Gallium nitride based RF transistor amplifiers include a semiconductor structure having a gallium nitride based channel layer and a gallium nitride based barrier layer thereon, and are configured to operate at a specific direct current drain-to-source bias voltage. These amplifiers are configured to have a normalized drain-to-gate capacitance at the direct current drain-to-source bias voltage, and to have a second normalized drain-to-gate capacitance at two-thirds the direct current drain-to-source bias voltage, where the second normalized drain-to-gate capacitance is less than twice the first normalized drain-to-gate capacitance.