Aspects of this disclosure relate to a coupler circuit configured to receive an output of a radio frequency coupler. The coupler circuit can be arranged in a daisy chain with other coupler circuits. The coupler circuit can include a switch configured to turn on based on a signal level of a direct current component of a coupler signal from another coupler circuit and pass a radio frequency component of the coupler signal when on. The coupler circuit can pass the coupler signal while a module that includes the coupler circuit is otherwise inactive.

Aspects of this disclosure relate to a coupler circuit configured to receive an output of a radio frequency coupler. The coupler circuit can be arranged in a daisy chain with other coupler circuits. The coupler circuit can include a switch configured to turn on based on a signal level of a direct current component of a coupler signal from another coupler circuit and pass a radio frequency component of the coupler signal when on. The coupler circuit can pass the coupler signal while a module that includes the coupler circuit is otherwise inactive.

A power amplifier circuit amplifies a radio-frequency signal in a transmit frequency band. The power amplifier circuit includes an amplifier, a bias circuit, and an impedance circuit. The amplifier amplifies power of a radio-frequency signal and outputs an amplified signal. The impedance circuit is connected between a signal input terminal of the amplifier and a bias-current output terminal of the bias circuit and has frequency characteristics in which attenuation is obtained in the transmit frequency band. The impedance circuit includes first and second impedance circuits. The first impedance circuit is connected to the signal input terminal. The second impedance circuit is connected between the first impedance circuit and the bias-current output terminal.

A power amplifier circuit amplifies a radio-frequency signal in a transmit frequency band. The power amplifier circuit includes an amplifier, a bias circuit, and an impedance circuit. The amplifier amplifies power of a radio-frequency signal and outputs an amplified signal. The impedance circuit is connected between a signal input terminal of the amplifier and a bias-current output terminal of the bias circuit and has frequency characteristics in which attenuation is obtained in the transmit frequency band. The impedance circuit includes first and second impedance circuits. The first impedance circuit is connected to the signal input terminal. The second impedance circuit is connected between the first impedance circuit and the bias-current output terminal.

Example embodiments relate to power amplifier devices and semiconductor dies. One example power amplifier device includes a semiconductor die having a first input terminal and a first output terminal. The power amplifier device also includes a power transistor integrated on the semiconductor die and including a second input terminal and a second output terminal arranged at an input side and output side of the power transistor, respectively. The power transistor has an output capacitance. Further, the power amplifier device includes a shunt network that includes a plurality of first bondwires arranged in series with a first capacitor. The first capacitor is arranged near the input side of the power transistor. At one end of the shunt network one end of the plurality of first bondwires is coupled to the second output terminal. Additionally, the power amplifier includes a pair of coupled lines formed on the semiconductor die.

RF amplifiers are provided that include a submount such as a thermally conductive flange. A dielectric substrate is mounted on an upper surface of the submount, the dielectric substrate having a first outer sidewall, a second outer sidewall that is opposite and substantially parallel to the first outer sidewall, and an interior opening. An RF amplifier die is mounted on the submount within the interior opening of the dielectric substrate, where a longitudinal axis of the RF amplifier die defines a first axis. The RF amplifier die is positioned so that a first angle defined by the intersection of the first axis with the first outer sidewall is between 5° and 45°. The dielectric substrate may be a ceramic substrate or a dielectric layer of a printed circuit board.

RF amplifiers are provided that include a submount such as a thermally conductive flange. A dielectric substrate is mounted on an upper surface of the submount, the dielectric substrate having a first outer sidewall, a second outer sidewall that is opposite and substantially parallel to the first outer sidewall, and an interior opening. An RF amplifier die is mounted on the submount within the interior opening of the dielectric substrate, where a longitudinal axis of the RF amplifier die defines a first axis. The RF amplifier die is positioned so that a first angle defined by the intersection of the first axis with the first outer sidewall is between 5° and 45°. The dielectric substrate may be a ceramic substrate or a dielectric layer of a printed circuit board.

The present disclosure relates to a radio frequency power amplifier system (200) comprising a first (114) and a second input port (121). The radio frequency power amplifier system (200) comprises a main amplifier (101) having an input (107) and an output (108) and a first (102) and a second auxiliary amplifier (122) having respective inputs (109, 129) and outputs (110, 128). The radio frequency power amplifier system (200) comprises an internal load (103) connected to the output (110) of the first auxiliary amplifier (102), a feedback network (104) having an input end (111) connected to the output (110) of the first auxiliary amplifier (102) and an output end (112) connected to the input (109) of the first auxiliary amplifier (102). The radio frequency power amplifier system (200) also comprises a feedforward amplifier (123) having an input (124) and an output (130). The inputs (107, 129, 109) of the main amplifier and the auxiliary amplifiers are interconnected with the first input port (114) at a common input node (113), the output (128) of the second auxiliary amplifier (122) and the second input port (121) are interconnected with the input (124) of the feedforward amplifier (123) at a common node (127) and the outputs (130,108) of the feedforward amplifier (123) and the main amplifier (101) are interconnected at a common output node (125). The main amplifier (101) is a replica of the first auxiliary amplifier (102) with an increased gain and the second auxiliary amplifier (122) is a replica of the first auxiliary amplifier (102).

The present disclosure relates to a radio frequency power amplifier system (200) comprising a first (114) and a second input port (121). The radio frequency power amplifier system (200) comprises a main amplifier (101) having an input (107) and an output (108) and a first (102) and a second auxiliary amplifier (122) having respective inputs (109, 129) and outputs (110, 128). The radio frequency power amplifier system (200) comprises an internal load (103) connected to the output (110) of the first auxiliary amplifier (102), a feedback network (104) having an input end (111) connected to the output (110) of the first auxiliary amplifier (102) and an output end (112) connected to the input (109) of the first auxiliary amplifier (102). The radio frequency power amplifier system (200) also comprises a feedforward amplifier (123) having an input (124) and an output (130). The inputs (107, 129, 109) of the main amplifier and the auxiliary amplifiers are interconnected with the first input port (114) at a common input node (113), the output (128) of the second auxiliary amplifier (122) and the second input port (121) are interconnected with the input (124) of the feedforward amplifier (123) at a common node (127) and the outputs (130,108) of the feedforward amplifier (123) and the main amplifier (101) are interconnected at a common output node (125). The main amplifier (101) is a replica of the first auxiliary amplifier (102) with an increased gain and the second auxiliary amplifier (122) is a replica of the first auxiliary amplifier (102).

In a semiconductor device, a first member having a first surface includes a plurality of circuit blocks disposed in an inner region of the first surface when the first surface is viewed in plan. The second member is joined to the first surface of the first member in surface contact with the first surface. The second member includes a plurality of first transistors that are connected in parallel to each other and form a first amplifier circuit. A conductive protrusion protrudes from the second member on an opposite side to the first member. The first transistors are disposed in a region not overlapping any of the circuit blocks in the first member in a plan view.