An output matching circuit includes: a converter electrically connected to an output end of a power amplifier element to convert an impedance of the output end to an impedance higher than the impedance of the output end by magnetic coupling; and a first filter circuit electrically connected between the output end of the power amplifier element and the converter to make a short circuit in a frequency band different from a predetermined transmission frequency band.

A radio-frequency module includes a module substrate and a power amplification circuit that includes first to fourth amplification elements, a transformer including primary and secondary coils, an output terminal to which the secondary coil is connected, and a circuit component disposed on the module substrate. Output terminals of the first and third amplification elements and output terminals of the second and fourth amplification elements are respectively connected to a first terminal and a second terminal of the primary coil. A capacitor is connected to a wiring line path connected between the output terminal of the first amplification element and the first terminal of the primary coil and to a wiring line path connected between the output terminal of the second amplification element and the second terminal of the primary coil. The primary or secondary coil includes a conductive layer surrounding at least part of the circuit component.

A number of biasing circuits for amplifiers including voltage controlled amplifier is presented. Also a number of field effect transistor circuits include voltage controlled attenuators or voltage controlled processing circuits. Example circuits include modulators, lower distortion variable voltage controlled resistors, sine wave to triangle wave converters, and or servo controlled biasing circuits.

An amplifier includes a semiconductor die and a substrate that is distinct from the semiconductor die. The semiconductor die includes a first RF signal input terminal, a first RF signal output terminal, and a transistor. The transistor has a control terminal electrically coupled to the first RF signal input terminal, and a current-carrying terminal electrically coupled to the first RF signal output terminal. The substrate includes a second RF signal input terminal, a second RF signal output terminal, circuitry coupled between the second RF signal input terminal and the second RF signal output terminal, and an electrostatic discharge (ESD) protection circuit. The amplifier also includes a connection electrically coupled between the ESD protection circuit and the control terminal of the transistor. The substrate may be another semiconductor die (e.g., with a driver transistor and/or impedance matching circuitry) or an integrated passive device.

An amplifier includes a semiconductor die and a substrate that is distinct from the semiconductor die. The semiconductor die includes a first RF signal input terminal, a first RF signal output terminal, and a transistor. The transistor has a control terminal electrically coupled to the first RF signal input terminal, and a current-carrying terminal electrically coupled to the first RF signal output terminal. The substrate includes a second RF signal input terminal, a second RF signal output terminal, circuitry coupled between the second RF signal input terminal and the second RF signal output terminal, and an electrostatic discharge (ESD) protection circuit. The amplifier also includes a connection electrically coupled between the ESD protection circuit and the control terminal of the transistor. The substrate may be another semiconductor die (e.g., with a driver transistor and/or impedance matching circuitry) or an integrated passive device.

A switched capacitor modulator (SCM) includes a RF power amplifier. The RF power amplifier receives a rectified voltage and a RF drive signal and modulates an input signal in accordance with the rectified voltage to generate a RF output signal to an output terminal. A reactance in parallel with the output terminal is configured to vary in response to a control signal to vary an equivalent reactance in parallel with the output terminal. A controller generates the control signal and a commanded phase. The commanded phase controls the RF drive signal. The reactance is at least one of a capacitance or an inductance, and the capacitance or the inductance varies in accordance with the control signal.

A switched capacitor modulator (SCM) includes a RF power amplifier. The RF power amplifier receives a rectified voltage and a RF drive signal and modulates an input signal in accordance with the rectified voltage to generate a RF output signal to an output terminal. A reactance in parallel with the output terminal is configured to vary in response to a control signal to vary an equivalent reactance in parallel with the output terminal. A controller generates the control signal and a commanded phase. The commanded phase controls the RF drive signal. The reactance is at least one of a capacitance or an inductance, and the capacitance or the inductance varies in accordance with the control signal.

An integrated microstrip circulator comprises a dielectric substrate having an aperture, a ferrite disc secured within the aperture in the dielectric substrate, metallization on upper surfaces of the dielectric substrate and the ferrite disc, and surface mount contacts disposed on lower surfaces of the dielectric substrate and the ferrite disc and in electrical communication with the metallization on the upper surfaces of the dielectric substrate and the ferrite disc.

A Doherty amplifier including a main amplifier and a peak amplifier is mounted on a package substrate. A low noise amplifier is further mounted on the package substrate. A transmit/receive switch switches in terms of time between a transmission connection state in which an output signal of the Doherty amplifier is supplied to an antenna and a reception connection state in which a signal received by the antenna is inputted to the low noise amplifier.

A Doherty amplifier including a main amplifier and a peak amplifier is mounted on a package substrate. A low noise amplifier is further mounted on the package substrate. A transmit/receive switch switches in terms of time between a transmission connection state in which an output signal of the Doherty amplifier is supplied to an antenna and a reception connection state in which a signal received by the antenna is inputted to the low noise amplifier.