A semiconductor structure for RF applications comprises: a first μTP GaN transistor on an SOI wafer or die; and a first resistor connected to the gate of said first transistor.

Monolithic microwave integrated circuits (MMICs) tolerant to electrical overstress are provided. In certain embodiments, a MMIC includes a signal pad that receives a radio frequency (RF) signal, and an RF circuit coupled to the RF signal pad. The RF circuit includes a transistor layout, an input field-effect transistor (FET) implemented using a first portion of a plurality of gate fingers of the transistor layout, and an embedded protection device electrically connected between a gate and a source of the input FET and implemented using a second portion of the plurality of gate fingers. The MMIC is tolerant to electrical overstress events, such as field-induced charged-device model (FICDM) events.

Monolithic microwave integrated circuits (MMICs) tolerant to electrical overstress are provided. In certain embodiments, a MMIC includes a signal pad that receives a radio frequency (RF) signal, and an RF circuit coupled to the RF signal pad. The RF circuit includes a transistor layout, an input field-effect transistor (FET) implemented using a first portion of a plurality of gate fingers of the transistor layout, and an embedded protection device electrically connected between a gate and a source of the input FET and implemented using a second portion of the plurality of gate fingers. The MMIC is tolerant to electrical overstress events, such as field-induced charged-device model (FICDM) events.

A multi-frequency low noise amplifier includes an input matching network, an amplifying circuit and an output matching network. The input matching network includes a first out-of-band rejection circuit and a first frequency band selection circuit. The output matching network includes a second out-of-band rejection circuit and a second frequency band selection circuit. The first out-of-band rejection circuit can reject signal of any frequency band in the radio frequency signals so that signals of the remaining frequency bands can pass through. The first frequency band selection circuit can screen out the signals of reference frequency spots from the remaining frequency bands. The second frequency band selection circuit can screen out the signals of partial frequency spots from the amplified signals of reference frequency spots. The second out-of-band rejection circuit can reject the signal of any frequency spot in the signals of partial frequency spots.

A multi-frequency low noise amplifier includes an input matching network, an amplifying circuit and an output matching network. The input matching network includes a first out-of-band rejection circuit and a first frequency band selection circuit. The output matching network includes a second out-of-band rejection circuit and a second frequency band selection circuit. The first out-of-band rejection circuit can reject signal of any frequency band in the radio frequency signals so that signals of the remaining frequency bands can pass through. The first frequency band selection circuit can screen out the signals of reference frequency spots from the remaining frequency bands. The second frequency band selection circuit can screen out the signals of partial frequency spots from the amplified signals of reference frequency spots. The second out-of-band rejection circuit can reject the signal of any frequency spot in the signals of partial frequency spots.

An amplitude modulation-phase modulation compensation circuit includes a detection circuit, a reconfigurable current control voltage source circuit and a phase shifting circuit, in which, the detection circuit is configured to detect the power of an input signal and output a control current according to the power of the input signal when the power of the input signal is greater than a preset power threshold; the reconfigurable current control voltage source circuit is configured to generate a bias voltage according to the control current; the phase shifting circuit is configured to compensate the AM-PM distortion of the radio frequency power amplifier according to the bias voltage. In this way, by the compensation circuit, when the power of the input signal is greater than a preset power threshold, the AM-PM distortion of the radio frequency power amplifier can be compensated according to the power of the input signal.

An amplitude modulation-phase modulation compensation circuit includes a detection circuit, a reconfigurable current control voltage source circuit and a phase shifting circuit, in which, the detection circuit is configured to detect the power of an input signal and output a control current according to the power of the input signal when the power of the input signal is greater than a preset power threshold; the reconfigurable current control voltage source circuit is configured to generate a bias voltage according to the control current; the phase shifting circuit is configured to compensate the AM-PM distortion of the radio frequency power amplifier according to the bias voltage. In this way, by the compensation circuit, when the power of the input signal is greater than a preset power threshold, the AM-PM distortion of the radio frequency power amplifier can be compensated according to the power of the input signal.

Various embodiments of the disclosure disclose a method and apparatus, comprising: a communication processor; a radio frequency integrated circuit (RFIC) connected to the communication processor and outputting at least one of a first radio frequency signal, a second radio frequency signal, a third radio frequency signal, and a fourth radio frequency signal; a first circuit connected to the RFIC and including a first filter; a first radio frequency front end (RFFE) connected to the first circuit and including a first amplifier configured to amplify the first radio frequency signal and/or the third radio frequency signal; and a second RFFE including a second amplifier configured to amplify the second radio frequency signal and/or the fourth radio frequency signal output from the RFIC, wherein the communication processor is configured to control the first circuit to remove the fourth radio frequency signal induced to the first circuit through the first filter.

A peak detector for a power amplifier is provided that includes a threshold voltage detector configured to pulse a detection current in response to an amplified output signal from the amplifier exceeding a peak threshold. A plurality of such peak detectors may be integrated with a corresponding plurality of power amplifiers in a transmitter. Should any peak detector assert an alarm signal or more than a threshold number of alarm signals during a given period, a controller reduces a gain for the plurality of power amplifiers.

A peak detector for a power amplifier is provided that includes a threshold voltage detector configured to pulse a detection current in response to an amplified output signal from the amplifier exceeding a peak threshold. A plurality of such peak detectors may be integrated with a corresponding plurality of power amplifiers in a transmitter. Should any peak detector assert an alarm signal or more than a threshold number of alarm signals during a given period, a controller reduces a gain for the plurality of power amplifiers.