A method of fabricating a cascode amplifier including a common-source device and a common-gate device includes performing one or more of ion implantation of a well of the common-source device, ion implantation of a source extension and/or drain extension of the common-source device, or a halo ion implantation of the common-source device with one or more of a different ionic species, a different dosage, a different energy, or a different tilt angle than a corresponding one or more of ion implantation of a well of the common-gate device, ion implantation of a source and/or drain extension of the common-gate device, or a halo ion implantation of the common-gate device.

A method of fabricating a cascode amplifier including a common-source device and a common-gate device includes performing one or more of ion implantation of a well of the common-source device, ion implantation of a source extension and/or drain extension of the common-source device, or a halo ion implantation of the common-source device with one or more of a different ionic species, a different dosage, a different energy, or a different tilt angle than a corresponding one or more of ion implantation of a well of the common-gate device, ion implantation of a source and/or drain extension of the common-gate device, or a halo ion implantation of the common-gate device.

A semiconductor device includes a ground plane, a capacitor disposed on the ground plane and having a first top surface, a semiconductor chip disposed on the ground plane and having a second top surface, a bonding wire connecting the first top surface and the second top surface, and a conductive member disposed on the ground plane. The conductive member is electrically connected to the ground plane. The bonding wire extends in a first direction in a planar view normal to the ground plane. The conductive member is positioned apart from the bonding wire in a second direction orthogonally intersecting in the planar view with the first direction.

Methods related to amplification of radio-frequency signals. In some embodiments, a method for amplifying a radio-frequency signal can include configuring a gain stage to be in a selected one of a plurality of gain settings, with at least some of the gain settings resulting in different phases for the radio-frequency signal. The method can further include adjusting the phase of the radio-frequency signal for the selected gain setting, such that the adjusted phase is part of desired phases adjusted from the different phases.

Methods related to amplification of radio-frequency signals. In some embodiments, a method for amplifying a radio-frequency signal can include configuring a gain stage to be in a selected one of a plurality of gain settings, with at least some of the gain settings resulting in different phases for the radio-frequency signal. The method can further include adjusting the phase of the radio-frequency signal for the selected gain setting, such that the adjusted phase is part of desired phases adjusted from the different phases.

The present disclosure provides a multiple output low noise amplifier circuit, chip and electronic device. The multiple output low noise amplifier circuit includes: a first processing module for amplifying an input voltage signal and converting it into at least two first current signals; a second processing module for impedance matching at the input terminal of the low noise amplifier circuit, and for amplifying the input voltage signal and converting it into at least two second current signals; a voltage output module, connected to the first processing module and the second processing module, for combining the first current signals and the second current signals and converting them into output voltage signals. The low noise amplifier circuit can convert a single input voltage signal to at least two output voltage signals, and is applicable in RF front ends with multiple output terminals.

The present disclosure provides a Multiple Inputs Multiple Outputs RF front-end amplifier circuit, chip, and electronic device and a method for configuring signal path. The RF front-end amplifier circuit includes: at least two low-noise amplifying modules, each of which amplifies one voltage signal and converts into one or more intermediate current signals; a voltage output module, connected to each of the low-noise amplifying modules, for combining the intermediate current signal output by the low-noise amplifying module and converting them into one or more output voltage signals. The RF front-end amplifier circuit can be applied to an RF front-end with a Multiple Inputs Multiple Outputs structure.

A circuit for controlling wireless transmissions. The circuit includes a multi-input logic gate coupled to a power amplifier for wireless transmission. A first input of the logic gate is coupled to a first wireless transceiver; and a second input of the gate is coupled to one or more wireless devices.

An electronic circuit according to various embodiments may comprise: a switch circuit, wherein the switch circuit may comprise: a first switch connected to a first port and a second switch connected to a second port, the first and second switches being connected in series with each other; a first parallel switch connected to a node between the first switch and the second switch; and a first shunt inductor connected to the node between the first switch and the second switch and configured to cancel a parasitic capacitance component of the first parallel switch.

Disclosed is a dual-band coupling low-noise amplifying circuit and an amplifier, which comprises an input frequency dividing circuit, a high-frequency amplifying circuit, a low-frequency amplifying circuit and an output combining circuit. The input frequency dividing circuit includes a first duplexer, a first capacitor and a second capacitor, and the output combining circuit includes a second duplexer, a third capacitor and a fourth capacitor. The input frequency dividing circuit divides the received radio frequency signals into high-frequency signals and low-frequency signals, then inputs the high-frequency signals into the high-frequency amplifying circuit for power amplification, and inputs the low-frequency signals into the low-frequency amplifying circuit for power amplification, and outputs the high-frequency signals and the low-frequency signals after power amplification through the output combining circuit.