H03F3/195

ENVELOPE TRACKING INTEGRATED CIRCUIT OPERABLE WITH MULTIPLE TYPES OF POWER AMPLIFIERS
20220399861 · 2022-12-15 ·

An envelope tracking (ET) integrated circuit (ETIC) operable with multiple types of power amplifiers is provided. The ETIC is configured to provide one or more ET voltages to a power amplifier(s) for amplifying a radio frequency (RF) signal. In embodiments disclosed herein, the ETIC can be configured to generate the ET voltages at same or different voltage levels based on specific types of the power amplifier(s), such as multi-stage power amplifier and Doherty power amplifier, and for a wider modulation bandwidth of the RF signal. As such, the ETIC can be flexibly adapted to enable a variety of power management scenarios and/or topologies.

Device for controlling wireless charging output power based on PWM integrating circuit

A device for controlling wireless charging output power based on a PWM integrating circuit includes a magnetic-resonance transmitting module and a magnetic-resonance receiving module. The magnetic-resonance transmitting module includes a wireless charging base, a Bluetooth master circuit, a DC/DC regulator circuit, a PWM integrating circuit, a radio-frequency power amplifier source, a radio-frequency current sampling circuit and a magnetic-resonance transmitting antenna. Both the radio-frequency power amplifier source and the magnetic-resonance transmitting antenna are mounted at the wireless charging base. The magnetic-resonance transmitting antenna is connected to the magnetic-resonance receiving module. The magnetic-resonance receiving module includes a cooling fin, a magnetic-resonance receiving antenna, a Bluetooth slave circuit, a receiving rectifier and regulator circuit and a charging control circuit. The magnetic-resonance receiving antenna, the receiving rectifier and regulator circuit and the charging control circuit are connected successively. The magnetic-resonance receiving antenna is arranged directly above the magnetic-resonance transmitting antenna.

Multiplexer and communication apparatus
11528010 · 2022-12-13 · ·

A multiplexer includes a transmission filter and a reception filter connected to a common terminal, a first inductor connected to the common terminal, and a multilayer substrate on which the transmission filter and the reception filter are mounted and which includes dielectric layers. The transmission filter includes a parallel-arm resonator connected to a path between the common terminal and a transmission terminal and a parallel-arm terminal, and a second inductor connected to the parallel-arm terminal and ground. The first inductor includes a first coil pattern on a first dielectric layer and a second coil pattern on a second dielectric layer. The second inductor includes a third coil pattern on the first dielectric layer and that is magnetically coupled to the first coil pattern. The inductance value of the second coil pattern is greater than that of the first coil pattern.

Radio frequency module and communication device
11528000 · 2022-12-13 · ·

A radio frequency module includes: a module board including a first principal surface and a second principal surface on opposite sides; a transmission input terminal; a transmission power amplifier that amplifies a transmission signal input from the transmission input terminal; a switch that switches between connecting and disconnecting the transmission input terminal and the transmission power amplifier, and a control circuit that controls the transmission power amplifier using digital control signals. The switch is disposed on the first principal surface, and the control circuit is disposed on the second principal surface.

Radio frequency module and communication device
11528000 · 2022-12-13 · ·

A radio frequency module includes: a module board including a first principal surface and a second principal surface on opposite sides; a transmission input terminal; a transmission power amplifier that amplifies a transmission signal input from the transmission input terminal; a switch that switches between connecting and disconnecting the transmission input terminal and the transmission power amplifier, and a control circuit that controls the transmission power amplifier using digital control signals. The switch is disposed on the first principal surface, and the control circuit is disposed on the second principal surface.

MONOLITHIC MICROWAVE INTEGRATED CIRCUIT FRONT-END MODULE
20220393656 · 2022-12-08 ·

There is provided a monolithic microwave integrated circuit, MMIC, front-end module (100) comprising: a gallium nitride structure (110) supported by a silicon substrate (120); a silicon-based transmit/receive switch (130) having a transmit mode and a receive mode; a transmit amplifier (112) configured to amplify an outgoing signal to be transmitted by said MMIC front-end module, wherein said transmit amplifier is electrically connected (132) to said transmit/receive switch, wherein said transmit amplifier comprises a gallium nitride high-electron-mobility transistor, HEMT, (114) formed in said gallium nitride structure; and a receive amplifier (113) configured to amplify an incoming signal received by said MMIC front-end module, wherein said receive amplifier is electrically connected (133) to said transmit/receive switch, wherein said receive amplifier comprises a gallium nitride HEMT (115) formed in said gallium nitride structure.

MONOLITHIC MICROWAVE INTEGRATED CIRCUIT FRONT-END MODULE
20220393656 · 2022-12-08 ·

There is provided a monolithic microwave integrated circuit, MMIC, front-end module (100) comprising: a gallium nitride structure (110) supported by a silicon substrate (120); a silicon-based transmit/receive switch (130) having a transmit mode and a receive mode; a transmit amplifier (112) configured to amplify an outgoing signal to be transmitted by said MMIC front-end module, wherein said transmit amplifier is electrically connected (132) to said transmit/receive switch, wherein said transmit amplifier comprises a gallium nitride high-electron-mobility transistor, HEMT, (114) formed in said gallium nitride structure; and a receive amplifier (113) configured to amplify an incoming signal received by said MMIC front-end module, wherein said receive amplifier is electrically connected (133) to said transmit/receive switch, wherein said receive amplifier comprises a gallium nitride HEMT (115) formed in said gallium nitride structure.

AMPLITUDE AND PHASE CONTROL DEVICE, AMPLITUDE AND PHASE CONTROL METHOD, AMPLIFICATION DEVICE, AND RADIO TRANSMITTER

An amplitude and phase control device includes a signal dividing unit to divide a transmission signal into first and second signals and output the first and second signals to a Doherty amplifier, an error calculating unit to acquire, from the Doherty amplifier, a synthesized signal of first and second signals amplified by the Doherty amplifier, multiply the synthesized signal by a reciprocal of a gain of the Doherty amplifier, and calculate an error between a synthesized signal after being multiplied by the reciprocal and the transmission signal, and a controlling unit to control an amplitude of each of the first signal and the second signal output from the signal dividing unit depending on the error calculated by the error calculating unit, and control a phase difference between the first signal output from the signal dividing unit and the second signal output from the signal dividing unit depending on the error.

PACKAGED TRANSISTOR AMPLIFIERS THAT INCLUDE INTEGRATED PASSIVE DEVICE MATCHING STRUCTURES HAVING DISTRIBUTED SHUNT INDUCTANCES
20220392857 · 2022-12-08 ·

A packaged RF transistor amplifier includes an RF transistor amplifier die having a first terminal, a first lead, an integrated passive device that includes a first series microstrip transmission line, a first bond wire coupled between the first terminal and the first series microstrip transmission line, and a second bond wire coupled between the first series microstrip transmission line and the first lead.

PACKAGED TRANSISTOR AMPLIFIERS THAT INCLUDE INTEGRATED PASSIVE DEVICE MATCHING STRUCTURES HAVING DISTRIBUTED SHUNT INDUCTANCES
20220392857 · 2022-12-08 ·

A packaged RF transistor amplifier includes an RF transistor amplifier die having a first terminal, a first lead, an integrated passive device that includes a first series microstrip transmission line, a first bond wire coupled between the first terminal and the first series microstrip transmission line, and a second bond wire coupled between the first series microstrip transmission line and the first lead.