A device that includes a substrate and a power amplifier coupled to the substrate. The substrate includes at least one dielectric layer, a plurality of interconnects, and a capacitor configured to operate as an output match element, where the capacitor is defined by a plurality of capacitor interconnects. The power amplifier is coupled to the capacitor. The capacitor is configured to operate as an output match element for the power amplifier. The substrate includes an inductor coupled to the capacitor, where the inductor is defined by at least one inductor interconnect. The capacitor and the inductor are configured to operate as a resonant trap or an output match element.

An overvoltage protection and gain bootstrap circuit of a power amplifier includes a power amplification transistor, and a diode reversely connected with a gate of the power amplification transistor. A negative electrode of the diode is connected with the gate of the power transistor, and a positive electrode of the diode is connected with a constant voltage source, such that a function of overvoltage protection and gain bootstrap of the circuit is realized by controlling a turn-on state of the diode. By adding a diode device to the circuit, gate-drain overvoltage protection for the power amplification transistor can be provided, and the gain of the amplifier can be improved before power compression, thereby improving linearity of the power amplifier. The structure of the circuit can be simple, with reduced occupied area hardware cost.

An overvoltage protection and gain bootstrap circuit of a power amplifier includes a power amplification transistor, and a diode reversely connected with a gate of the power amplification transistor. A negative electrode of the diode is connected with the gate of the power transistor, and a positive electrode of the diode is connected with a constant voltage source, such that a function of overvoltage protection and gain bootstrap of the circuit is realized by controlling a turn-on state of the diode. By adding a diode device to the circuit, gate-drain overvoltage protection for the power amplification transistor can be provided, and the gain of the amplifier can be improved before power compression, thereby improving linearity of the power amplifier. The structure of the circuit can be simple, with reduced occupied area hardware cost.

Efficient amplifier operation. In one aspect, there is a radio transceiver device. The radio transceiver device includes a distorting unit configured to receive an input signal and distort the received input signal, thereby producing a distorted input signal. The radio transceiver device further includes a limiter configured to receive the distorted input signal and produce a limited signal based on the received distorted input signal. The radio transceiver device further includes a power amplifier configured to receive the limited signal and amplify the limited signal, thereby producing an amplified limited signal.

This application provides a chip apparatus, including a die, a first bond pad, a second bond pad, and a first solder pad. The first bond pad and the second bond pad are disposed on an upper surface of the die. A first power module and a second power module are disposed in the die. The first power module is coupled to the first bond pad. The second power module is coupled to the second bond pad. The first solder pad is separately coupled to an external power supply of the chip apparatus, the first bond pad, and the second bond pad. According to the foregoing technical solution, isolation between different power modules is improved, and noise transmitted on a power supply path can be better filtered out. This improves power supply noise performance of the chip apparatus.

A semiconductor device package includes a plurality of input leads and an output lead, a plurality of transistor amplifier dies having inputs respectively coupled to the plurality of input leads, and a combination circuit configured to combine output signals received from the plurality of transistor amplifier dies and output a combined signal to the output lead.

A difference between subsequent measures of a second signal when a first signal crosses a threshold value can be used to estimate a delay between the first and second signal. The delay can be used to compensate for delays between an envelope power supply signal and a radio frequency (RF) input signal.

A difference between subsequent measures of a second signal when a first signal crosses a threshold value can be used to estimate a delay between the first and second signal. The delay can be used to compensate for delays between an envelope power supply signal and a radio frequency (RF) input signal.

The present invention discloses an amplifier. The bias amplifier includes a signal input end, for inputting an input signal; a voltage input end, for inputting a source voltage; an amplifying circuit, for generating an amplified input signal according to the input signal, and the amplified input signal comprises a fundamental signal, a first harmonic signal and a second harmonic signal, wherein the first harmonic signal is a second order harmonic of the fundamental signal, and the second harmonic signal is a third order harmonic of the fundamental signal; a harmonic filter, coupled between the voltage input end and the amplifying circuit, for filtering the first harmonic signal and the second harmonic signal; and a signal output end, coupled to the harmonic filter, for outputting an output signal according to the amplified input signal.

A semiconductor device package includes a plurality of input leads, a plurality of transistor amplifier dies having inputs respectively coupled to the plurality of input leads, and a combined output lead configured to combine output signals received from the plurality of transistor amplifier dies and output a combined signal.