Disclosed is an integrated circuit amplifier having a power transistor with a signal/bias input terminal, a first high current terminal, and a second high current terminal, and thermal protection circuitry with a sensor transistor having a sensor control terminal, a sensor output terminal, and a sensor current terminal coupled to a fixed voltage node. Sensor bias circuitry includes a sensor bias terminal coupled to the sensor control terminal, wherein the sensor bias circuitry is configured to generate a temperature set point at which a sensor output voltage at the sensor output terminal drops at least 50% when the temperature of the sensor transistor is above the temperature set point. Shutdown circuitry coupled between the sensor output terminal and the signal/bias input terminal is configured to reduce a bias signal at the signal/bias terminal in response to the at least 50% drop in sensor output voltage.

Aspects of this disclosure relate to acoustic wave filters with bulk acoustic wave resonators. An acoustic wave filter can include a first bulk acoustic wave resonator configured to excite an overtone mode as a main mode and a second bulk acoustic wave resonator having a fundamental mode as a main mode.

A low-power standard-compliant NB-IoT wake-up receiver (WRX) is presented. The WRX is designed as a companion radio to a full NB-IoT receiver, only operating during discontinuous RX modes (DRX and eDRX), which allows the full high-power radio to turn off while the wake-up receiver efficiently receives NB-IoTWake-Up Signals (WUS). The fabricated receiver achieves 2.1 mW power at −109 dBm sensitivity with 180 kHz bandwidth over the 750-960 MHz bands. The WRX is fabricated in 28 nm CMOS and consumes 5× less power than the best previously published traditional NB-IoT receivers. This disclosure is the first designed dedicated wake-up receiver for the NB-IoT protocol and demonstrates the benefits of utilizing a WRX to reduce power consumption of NB-IoT radios.

A transformer-based amplifier, an operating method thereof, and devices including the same are disclosed. A millimeter wave amplifier includes a first transformer positioned on an input side of the millimeter wave amplifier, a second transformer positioned on an output side of the millimeter wave amplifier, and one or more of amplification stages positioned between the first transformer and the second transformer.

A radio-frequency module includes a multilayer substrate, a first semiconductor device, a second semiconductor device, a mold layer, and a shield layer. The multilayer substrate includes a plurality of stacked layers, and has a first major face and a second major face. The mold layer seals at least the second semiconductor device. The shield layer 80 covers the mold layer. The first major face includes a first recess. The first semiconductor device is mounted over a bottom face of the first recess. The second semiconductor device is mounted over the first major face so as to overlie the first recess. The first semiconductor device is connected with a metallic via that extends through a portion of the multilayer substrate from the bottom face of the first recess to the second major face. The mold layer does not cover a top face of the second semiconductor device.

A radio-frequency module includes a multilayer substrate, a first semiconductor device, a second semiconductor device, and a metal layer. The multilayer substrate includes a plurality of stacked layers, and has a first major face and a second major face. The first major face includes a first recess. The first semiconductor device is mounted over a bottom face of the first recess. The second semiconductor device is mounted over the first major face so as to overlie the first recess. The first semiconductor device is connected with a metallic via that extends through a portion of the multilayer substrate from the bottom face of the first recess to the second major face. The metal layer is disposed between the first semiconductor device and the second semiconductor device so as to overlie the first recess.

Gallium nitride based RF transistor amplifiers include a semiconductor structure having a gallium nitride based channel layer and a gallium nitride based barrier layer thereon, and are configured to operate at a specific direct current drain-to-source bias voltage. These amplifiers are configured to have a normalized drain-to-gate capacitance at the direct current drain-to-source bias voltage, and to have a second normalized drain-to-gate capacitance at two-thirds the direct current drain-to-source bias voltage, where the second normalized drain-to-gate capacitance is less than twice the first normalized drain-to-gate capacitance.

Methods and apparatuses for controlling gain of a single stage cascode FET amplifier are presented. According to one aspect, a series-connected resistor and capacitor is coupled to a gate of a cascode FET transistor of the amplifier, the capacitor providing a short at frequencies of operation of the amplifier. According to another aspect, values of the resistor can be used to control gain of the amplifier. According to yet another aspect, the resistor is a variable resistor whose value can be controlled/adjusted to provide different gains of the amplifier according to a linear function of the resistor value. An input matching network coupled to an input of the amplifier can be used to compensate for different noise figure degradations from different values of the resistor.

Methods and apparatuses for controlling gain of a single stage cascode FET amplifier are presented. According to one aspect, a series-connected resistor and capacitor is coupled to a gate of a cascode FET transistor of the amplifier, the capacitor providing a short at frequencies of operation of the amplifier. According to another aspect, values of the resistor can be used to control gain of the amplifier. According to yet another aspect, the resistor is a variable resistor whose value can be controlled/adjusted to provide different gains of the amplifier according to a linear function of the resistor value. An input matching network coupled to an input of the amplifier can be used to compensate for different noise figure degradations from different values of the resistor.

Provided are a low noise amplifier and a receiver. The low noise amplifier comprises at least one input port configured to receive an input signal including a carrier, first to third output ports connected to first to third load circuits, respectively, and configured to transmit an output signal, a first amplifier stage comprising a first type gain stage connected to the input port and first to third first type drive stages connected to the first to third output ports, respectively and second to third amplifier stages, each comprising a second type gain stage and a second type drive stage, wherein the low noise amplifier is configured to vary an impedance of an input transistor included in each of the first type gain stage and the second type gain stage, so that an input impedance is uniform even when operating in a plurality of operation modes.