Systems, methods, and devices relate to tunable baluns for multimode power amplification. For example, a variable-gain amplification system can include a power amplifier configured to provide an amplified signal and to selectively operate in at least a first gain mode and a second gain mode. The variable-gain amplification system can also include a tunable balun circuit configured to receive the amplified signal from the power amplifier and to provide an output signal. The tunable balun circuit can be configured to implement a first turn ratio for the first gain mode and a second turn ratio for the second gain mode.

Systems, methods, and devices relate to tunable baluns for multimode power amplification. For example, a variable-gain amplification system can include a power amplifier configured to provide an amplified signal and to selectively operate in at least a first gain mode and a second gain mode. The variable-gain amplification system can also include a tunable balun circuit configured to receive the amplified signal from the power amplifier and to provide an output signal. The tunable balun circuit can be configured to implement a first turn ratio for the first gain mode and a second turn ratio for the second gain mode.

A radio frequency module includes: a first terminal to which a signal of a first frequency band is inputted, the first frequency band being at least a portion of an unlicensed band higher than or equal to 5 GHz; a second terminal to which a signal of a second frequency band is inputted, the second frequency band being at least a portion of a licensed band lower than 5 GHz; a first amplifier configured to amplify a signal of the first frequency band inputted to the first terminal; and a second amplifier configured to amplify a signal of the second frequency band inputted to the second terminal. In the radio frequency module, the first amplifier and the second amplifier are disposed in one package.

A radio frequency module includes: a first terminal to which a signal of a first frequency band is inputted, the first frequency band being at least a portion of an unlicensed band higher than or equal to 5 GHz; a second terminal to which a signal of a second frequency band is inputted, the second frequency band being at least a portion of a licensed band lower than 5 GHz; a first amplifier configured to amplify a signal of the first frequency band inputted to the first terminal; and a second amplifier configured to amplify a signal of the second frequency band inputted to the second terminal. In the radio frequency module, the first amplifier and the second amplifier are disposed in one package.

According to certain aspects, a chip includes a pad, a power amplifier, a transformer coupled between an output of the power amplifier and the pad, a transistor coupled between the transformer and a ground, and a first clamp circuit coupled between a gate of the transistor and a drain of the transistor.

According to certain aspects, a chip includes a pad, a power amplifier, a transformer coupled between an output of the power amplifier and the pad, a transistor coupled between the transformer and a ground, and a first clamp circuit coupled between a gate of the transistor and a drain of the transistor.

Methods and devices to implement efficiently an AUX terminal in RF front end receivers using LNAs are described. The described methods implement a smaller number of switches resulting in an overall performance improvement by reducing the noise figure at the input of the LNA. The presented devices can be used in low/high gain and bypass modes and can accommodate an arbitrary number of bands over a wide frequency range.

Methods and devices to implement efficiently an AUX terminal in RF front end receivers using LNAs are described. The described methods implement a smaller number of switches resulting in an overall performance improvement by reducing the noise figure at the input of the LNA. The presented devices can be used in low/high gain and bypass modes and can accommodate an arbitrary number of bands over a wide frequency range.

An RF transmitter (1) having a gate-segmented power output stage (2) and a digital driver (5). The gate-segmented power output stage (2) includes a field-effect transistor with a plurality of gate fingers (32) and drain fingers (31) that define a gate periphery. The field-effect transistor comprises a plurality of power output stage segments (3) that each correspond to a respective part of the gate periphery, and that each have a respective power output stage segment input (4). The digital driver (5) has control outputs (6) which are connected to corresponding ones of the respective power output stage segment inputs (4), and is configured for individually switching each of the power output stage segments (3) between an on mode and a cut-off mode in dependence of one or more input signals to obtain a modulated RF carrier signal at an output (7) of the gate-segmented power output stage (2).

A power amplifier circuit includes amplifying transistors electrically cascade-connected, amplifying a signal supplied to a base, and outputting an amplified signal; a first resistive element having end parts connected to the base of a first amplifying transistor; a second resistive element having end parts connected to the base of a second amplifying transistor, which is an amplifying transistor located closer to an input side than the first amplifying transistor; a first bias supplying transistor having an emitter connected to one of the end parts of the first resistive element; a second bias supplying transistor having an emitter connected to one of the end parts of the second resistive element; and a bias current compensation transistor having a base connected to the end part of the first resistive element, a collector connected to the end part of the second resistive element, and an emitter connected to ground.