Techniques for efficiently generating a variable boosted supply voltage for an amplifier and/or other circuits are disclosed. In an exemplary design, an apparatus includes an amplifier, a boost converter, and a boost controller. The amplifier receives an envelope signal and a variable boosted supply voltage and provides an output voltage and an output current. The boost converter receives a power supply voltage and at least one signal determined based on the envelope signal and generates the variable boosted supply voltage based on the power supply voltage and the at least one signal. The boost controller generates the at least one signal (e.g., an enable signal and/or a threshold voltage) for the boost converter based on the envelope signal and/or the output voltage. The boost converter is enabled or disabled based on the enable signal and generates the variable boosted supply voltage based on the power supply voltage and the threshold voltage.

Techniques for efficiently generating a variable boosted supply voltage for an amplifier and/or other circuits are disclosed. In an exemplary design, an apparatus includes an amplifier, a boost converter, and a boost controller. The amplifier receives an envelope signal and a variable boosted supply voltage and provides an output voltage and an output current. The boost converter receives a power supply voltage and at least one signal determined based on the envelope signal and generates the variable boosted supply voltage based on the power supply voltage and the at least one signal. The boost controller generates the at least one signal (e.g., an enable signal and/or a threshold voltage) for the boost converter based on the envelope signal and/or the output voltage. The boost converter is enabled or disabled based on the enable signal and generates the variable boosted supply voltage based on the power supply voltage and the threshold voltage.

A transformer is provided. The transformer includes at least one first primary turn; at least one second primary turn; and a first secondary turn and a second secondary turn. The first secondary turn and the second secondary turn are arranged laterally between the at least one first primary turn and the at least one second primary turn. The first secondary turn and the second secondary turn are arranged one above the other.

A transformer is provided. The transformer includes at least one first primary turn; at least one second primary turn; and a first secondary turn and a second secondary turn. The first secondary turn and the second secondary turn are arranged laterally between the at least one first primary turn and the at least one second primary turn. The first secondary turn and the second secondary turn are arranged one above the other.

A radio-frequency module includes power amplifiers on a major surface of a module substrate, a transmit filter coupled to an output terminal of the power amplifier to pass a transmit signal in a communication band A, a transmit filter coupled to an output terminal of the power amplifier to pass a transmit signal in a communication band C, a transmit filter coupled to an output terminal of the power amplifier to pass a transmit signal in a communication band E, a resin member covering the major surface, a metal shield layer covering a surface of the resin member, and a metal shield plate on the major surface between the power amplifier and the power amplifier and also between the power amplifier and the power amplifier. The metal shield plate is in contact with a first ground electrode at the major surface and also with the metal shield layer.

A high-frequency module includes: a module board that has main surfaces which are opposed to each other; a plurality of high-frequency components that are arranged on at least one of the main surfaces; a resin member that covers at least one of the main surfaces and has a plurality of side surfaces along an outer edge of the module board; and a shield electrode layer that covers some of the side surfaces without covering other side surfaces.

A semiconductor IC includes a first radio-frequency element (e.g., an inductor in a low-noise amplifier), a second radio-frequency element (e.g., an inductor in a low-noise amplifier), a first via conductor (e.g., a via conductor that is placed between the first radio-frequency element and the second radio-frequency element and that is connected to a ground potential.

A transmitter/receiver apparatus including: a transmitter/receiver terminal; a switching amplifier that includes a low-side switching element connected between a ground terminal and a pulse output terminal and a high-side switching element connected between the pulse output terminal and a power supply terminal and that outputs a pulse signal from the pulse output terminal; a filter that passes therethrough and outputs as a transmitted signal a predetermined frequency component of the pulse signal from a transmitter terminal; and a transmit/receive switch unit that switches the connection status between the transmitter/receiver terminal and the transmitter terminal and also switches the connection status between the transmitter/receiver terminal and a receiver terminal. During receiving, on the basis of the connection status between the transmitter/receiver terminal and the transmitter terminal, the low-side and high-side switching elements are fixed to conductive and non-conductive states, respectively, to non-conductive and conductive states, respectively, or both to non-conductive states.

A transmitter/receiver apparatus including: a transmitter/receiver terminal; a switching amplifier that includes a low-side switching element connected between a ground terminal and a pulse output terminal and a high-side switching element connected between the pulse output terminal and a power supply terminal and that outputs a pulse signal from the pulse output terminal; a filter that passes therethrough and outputs as a transmitted signal a predetermined frequency component of the pulse signal from a transmitter terminal; and a transmit/receive switch unit that switches the connection status between the transmitter/receiver terminal and the transmitter terminal and also switches the connection status between the transmitter/receiver terminal and a receiver terminal. During receiving, on the basis of the connection status between the transmitter/receiver terminal and the transmitter terminal, the low-side and high-side switching elements are fixed to conductive and non-conductive states, respectively, to non-conductive and conductive states, respectively, or both to non-conductive states.

An RF transistor amplifier circuit comprises a Group III nitride based RF transistor amplifier having a gate terminal, a Group III nitride based self-bias circuit that includes a first Group III nitride based depletion mode high electron mobility transistor, the Group III nitride based self-bias circuit configured to generate a bias voltage, and a Group III nitride based depletion mode differential amplifier that is configured to generate an inverted bias voltage from the bias voltage and to apply the inverted bias voltage to the gate terminal of the Group III nitride based RF transistor amplifier. The Group III nitride based RF transistor amplifier, the Group III nitride based self-bias circuit and the Group III nitride based depletion mode differential amplifier are all implemented in a single die.