H03F3/195

Power amplifier circuit

A power amplifier circuit includes a power splitter, a first amplifier configured to output a first amplified signal from a first output terminal, and a second amplifier configured to output a second amplified signal from a second output terminal. The power amplifier circuit further includes a first termination circuit connected between the first output terminal and the second output terminal, a first transmission line, a second transmission line, a second termination circuit connected between another end of the first transmission line and another end of the second transmission line, and a power combiner.

Power amplifier circuit

A power amplifier circuit includes a power splitter, a first amplifier configured to output a first amplified signal from a first output terminal, and a second amplifier configured to output a second amplified signal from a second output terminal. The power amplifier circuit further includes a first termination circuit connected between the first output terminal and the second output terminal, a first transmission line, a second transmission line, a second termination circuit connected between another end of the first transmission line and another end of the second transmission line, and a power combiner.

Power amplifier system

A power amplifier system includes: a base substrate; a driver stage configured to receive and amplify an RF input signal, wherein the driver stage is disposed within the base substrate and is implemented in a first substrate; and a power stage configured to receive the RF input signal amplified by the driver stage and amplify the RF input signal amplified by the driver stage, wherein the power stage is disposed outside the base substrate and is implemented in a second substrate independent from the first substrate.

Power amplifier system

A power amplifier system includes: a base substrate; a driver stage configured to receive and amplify an RF input signal, wherein the driver stage is disposed within the base substrate and is implemented in a first substrate; and a power stage configured to receive the RF input signal amplified by the driver stage and amplify the RF input signal amplified by the driver stage, wherein the power stage is disposed outside the base substrate and is implemented in a second substrate independent from the first substrate.

Radio frequency transistor amplifiers having multi-layer encapsulations that include functional electrical circuits

RF transistor amplifiers are provided that include a submount and an RF transistor amplifier die that is mounted on top of the submount. A multi-layer encapsulation is formed that at least partially covers the RF transistor amplifier die. The multi-layer encapsulation includes a first dielectric layer and a first conductive layer, where the first dielectric layer is between a top surface of the RF transistor amplifier die and the first conductive layer.

Radio frequency transistor amplifiers having multi-layer encapsulations that include functional electrical circuits

RF transistor amplifiers are provided that include a submount and an RF transistor amplifier die that is mounted on top of the submount. A multi-layer encapsulation is formed that at least partially covers the RF transistor amplifier die. The multi-layer encapsulation includes a first dielectric layer and a first conductive layer, where the first dielectric layer is between a top surface of the RF transistor amplifier die and the first conductive layer.

Transformer-based current-reuse amplifier with embedded IQ generation for compact image rejection architecture in multi-band millimeter-wave 5G communication
11677430 · 2023-06-13 · ·

According to one embodiment, a transformer-based in-phase and quadrature (IQ) includes a differential balun having a first inductor and a second inductor. The first inductor has a first input terminal and a first output terminal. The second inductor has a second input terminal and a second output terminal. Additionally, the IQ generator circuit includes a third inductor magnetically coupled with the first inductor. The third inductor has a first isolation terminal and a third output terminal. The IQ generator circuit also includes a fourth inductor magnetically coupled with the second inductor. The fourth inductor has a second isolation terminal and a fourth output terminal. The IQ generator circuit additionally includes a first transistor coupled to the first input terminal of the first inductor. Further, the generator circuit includes a second transistor coupled to the second input terminal of the second inductor. The first transistor, the second transistor, the first inductor, and the second inductor form a part of a differential amplifier.

POWER AMPLIFIER MODULE, FRONTEND CIRCUIT, AND COMMUNICATION DEVICE
20230179151 · 2023-06-08 ·

A PA module includes: a multilayer substrate having a ground pattern layer connected to a ground of a power source; amplifier transistors disposed on the multilayer substrate; a bypass capacitor having one end connected to the collector of the amplifier transistor; a first wiring line connecting the emitter of the amplifier transistor and the ground pattern layer to each other; a second wiring line connecting the emitter of the amplifier transistor and the ground pattern layer to each other; a third wiring line connecting the other end of the bypass capacitor and the ground pattern layer to each other; and a fourth wiring line formed between the amplifier transistor and the ground pattern layer and between the bypass capacitor and the ground pattern layer and connecting the first wiring line and the third wiring line to each other.

POWER AMPLIFIER MODULE, FRONTEND CIRCUIT, AND COMMUNICATION DEVICE
20230179151 · 2023-06-08 ·

A PA module includes: a multilayer substrate having a ground pattern layer connected to a ground of a power source; amplifier transistors disposed on the multilayer substrate; a bypass capacitor having one end connected to the collector of the amplifier transistor; a first wiring line connecting the emitter of the amplifier transistor and the ground pattern layer to each other; a second wiring line connecting the emitter of the amplifier transistor and the ground pattern layer to each other; a third wiring line connecting the other end of the bypass capacitor and the ground pattern layer to each other; and a fourth wiring line formed between the amplifier transistor and the ground pattern layer and between the bypass capacitor and the ground pattern layer and connecting the first wiring line and the third wiring line to each other.

Envelope tracking with low frequency loss correction

A low frequency loss correction circuit that improves the efficiency of a power amplifier at near-DC low frequencies The low frequency loss correction circuit can include a signal error detection circuit configured to produce an error signal in response to detecting one or more frequency components of a tracking signal below a cutoff frequency that are substantially attenuated through a capacitive path. The low frequency loss correction circuit can include a drive circuit configured to convert the error signal into a low frequency correction signal, and provide the low frequency correction signal to a voltage supply line, the low frequency correction signal including at least some of the one or more frequency components of the tracking signal below a cutoff frequency that are substantially attenuated through the capacitive path.