A transistor amplifier includes a group III-nitride based amplifier die including a gate terminal, a drain terminal, and a source terminal on a first surface of the amplifier die and an interconnect structure electrically bonded to the gate terminal, drain terminal and source terminal of the amplifier die on the first surface of the amplifier die and electrically bonded to an input path and output path of the transistor amplifier.

A power amplifier module can be formed that includes metamaterial matching circuits. This power amplifier module can be included as part of a front-end module of a wireless device. The front-end module can replace a passive duplexer with an active duplexer that uses the power amplifier module in combination with a low noise amplifier circuit that can include a metamaterial matching circuit. The combination of PA and LNA circuits that utilize metamaterials can provide the functionality of a duplexer without including a stand-alone or passive duplexer. Thus, in certain cases, the front-end module can provide duplexer functionality without including a separate duplexer. Advantageously, in certain cases, the size of the front-end module can be reduced by eliminating the passive duplexer. Further, the loss introduced into the signal path by the passive duplexer is eliminated improving the performance of the communication system that includes the active duplexer.

A power amplifier module can be formed that includes metamaterial matching circuits. This power amplifier module can be included as part of a front-end module of a wireless device. The front-end module can replace a passive duplexer with an active duplexer that uses the power amplifier module in combination with a low noise amplifier circuit that can include a metamaterial matching circuit. The combination of PA and LNA circuits that utilize metamaterials can provide the functionality of a duplexer without including a stand-alone or passive duplexer. Thus, in certain cases, the front-end module can provide duplexer functionality without including a separate duplexer. Advantageously, in certain cases, the size of the front-end module can be reduced by eliminating the passive duplexer. Further, the loss introduced into the signal path by the passive duplexer is eliminated improving the performance of the communication system that includes the active duplexer.

A tunable matching network is disclosed. In a particular example, the matching network includes at least one first inductor in a signal path of the matching network. The matching network includes at least one second inductor outside of the signal path. The matching network includes one or more switches coupled to the at least one second inductor. The one or more switches are configured to selectively enable mutual coupling of the at least one first inductor and the at least one second inductor.

A circuit comprising: an input terminal; a first amplifier coupled to the input terminal of the circuit to receive an input signal; a first inductor having a first terminal coupled to the input terminal and a second terminal configured to be coupled to the ground terminal, wherein the first inductor is arranged with a second inductor and configured to magnetically couple therewith, wherein said second inductor is coupled to the first amplifier and is configured to sense a current through the amplifier.

The present disclosure discloses a Doherty power amplifier, including at least one carrier power amplifier and at least one peak power amplifier connected in parallel, each carrier power amplifier includes at least one carrier power amplifier unit connected in parallel for power combination, and each peak power amplifier includes at least one peak power amplifier unit connected in parallel for power combination, each of the carrier power amplifier unit and the peak power amplifier unit includes two power amplifier circuits connected in parallel for power combination, and each of the two power amplifier circuits includes a medium-low power amplifier transistor having saturation power less than or equal to a preset threshold. The present disclosure further discloses a power amplification method.

The present disclosure discloses a Doherty power amplifier, including at least one carrier power amplifier and at least one peak power amplifier connected in parallel, each carrier power amplifier includes at least one carrier power amplifier unit connected in parallel for power combination, and each peak power amplifier includes at least one peak power amplifier unit connected in parallel for power combination, each of the carrier power amplifier unit and the peak power amplifier unit includes two power amplifier circuits connected in parallel for power combination, and each of the two power amplifier circuits includes a medium-low power amplifier transistor having saturation power less than or equal to a preset threshold. The present disclosure further discloses a power amplification method.

Improvement in heat dissipation capability is intended. A radio-frequency module includes a mounting substrate, a plurality of transmission filters, a resin layer, and a shield layer. The mounting substrate has a first major surface and a second major surface opposite to each other. The plurality of transmission filters is mounted on the first major surface of the mounting substrate. The resin layer is disposed on the first major surface of the mounting substrate and covers at least part of an outer peripheral surface of each of the plurality of transmission filters. The shield layer covers the resin layer and at least part of each of the plurality of transmission filters. At least part of a major surface of each of the plurality of transmission filters on an opposite side to the mounting substrate side is in contact with the shield layer.

An output circuit includes a first transistor, a second transistor, an operational amplifier that outputs a control voltage, and a switch circuit that controls voltage output in accordance with a control signal. When the control signal is in a first state, the switch circuit supplies the control voltage to the gate of the first transistor to turn on the first transistor and electrically connects the drain of first transistor to the operational amplifier so that a first output voltage is output from the drain of the first transistor. When the control signal is in a second state, the switch circuit supplies the control voltage to the gate of the second transistor to turn on the second transistor and electrically connects the drain of the second transistor to the operational amplifier so that a second output voltage is output from the drain of the second transistor.

A radio-frequency module includes a multilayer substrate, a first semiconductor device, a second semiconductor device, and an anisotropic conductive resin component. The multilayer substrate includes a plurality of stacked layers, and has a first major face and a second major face. The first major face includes a first recess. The first semiconductor device is mounted over a bottom face of the first recess with the anisotropic conductive resin component interposed therebetween. The second semiconductor device is mounted over the first major face so as to overlie the first recess. The first semiconductor device is connected with a metallic via that extends through a portion of the multilayer substrate from the bottom face of the first recess to the second major face.