An inductor isolation apparatus and method to reduce interaction between inductors on an integrated circuit.

An inductor isolation apparatus and method to reduce interaction between inductors on an integrated circuit.

An isolated power transfer device includes a transformer formed in a multi-layer substrate of an integrated circuit package. A primary winding of the transformer is coupled to a first integrated circuit to form a DC/AC power converter and a secondary winding of the transformer is coupled to a second integrated circuit to form an AC/DC power converter. The first and second integrated circuits are electrically isolated from each other. The first integrated circuit includes a lightly doped drain MOSFET integrated with conventional CMOS devices and the second integrated circuit includes a Schottky diode integrated with conventional CMOS devices. The isolated power transfer device includes a capacitive channel for communication of information across an isolation barrier from the second integrated circuit to the first integrated circuit. Capacitors of the capacitive channel may be formed in the multi-layer substrate of the integrated circuit package.

An isolated power transfer device includes a transformer formed in a multi-layer substrate of an integrated circuit package. A primary winding of the transformer is coupled to a first integrated circuit to form a DC/AC power converter and a secondary winding of the transformer is coupled to a second integrated circuit to form an AC/DC power converter. The first and second integrated circuits are electrically isolated from each other. The first integrated circuit includes a lightly doped drain MOSFET integrated with conventional CMOS devices and the second integrated circuit includes a Schottky diode integrated with conventional CMOS devices. The isolated power transfer device includes a capacitive channel for communication of information across an isolation barrier from the second integrated circuit to the first integrated circuit. Capacitors of the capacitive channel may be formed in the multi-layer substrate of the integrated circuit package.

System-on-chip (SOC) products using high frequency, wideband, highly linear, CMOS and BiCMOS processes will be the next evolution of wireless and wireline communications integrated circuits. Aspects described herein can provide enhanced overall performance over existing prior art single-ended, wideband RF amplifier topologies. A single-ended third order intermodulation distortion nulling circuit can extend the dynamic range for wideband amplifiers up to an order-of-magnitude, without a DC power or noise figure (NF) penalty. The application of distortion nulling can be extended to all the building blocks used in CMOS/BiCMOS RF transceivers to improve performance. The application of this concept to all of the building blocks in an RF transceiver will allow the dynamic range of the transceiver to be increased without suffering a DC power dissipation increase or a significant noise increase.

System-on-chip (SOC) products using high frequency, wideband, highly linear, CMOS and BiCMOS processes will be the next evolution of wireless and wireline communications integrated circuits. Aspects described herein can provide enhanced overall performance over existing prior art single-ended, wideband RF amplifier topologies. A single-ended third order intermodulation distortion nulling circuit can extend the dynamic range for wideband amplifiers up to an order-of-magnitude, without a DC power or noise figure (NF) penalty. The application of distortion nulling can be extended to all the building blocks used in CMOS/BiCMOS RF transceivers to improve performance. The application of this concept to all of the building blocks in an RF transceiver will allow the dynamic range of the transceiver to be increased without suffering a DC power dissipation increase or a significant noise increase.

Apparatus and methods for a no-load-modulation power amplifier are described. No-load-modulation power amplifiers can comprise multiple amplifiers connected in parallel to amplify a signal that has been divided into parallel circuit branches. One of the amplifiers can operate as a main amplifier in a first amplification class and the remaining amplifiers can operate as peaking amplifiers in a second amplification class. The main amplifier can see essentially no modulation of its load between the power amplifier's fully-on and fully backed-off states. The power amplifiers can operate in symmetric and asymmetric modes. Improvements in bandwidth and drain efficiency over conventional Doherty amplifiers are obtained. Further improvements can be obtained by combining signals from the amplifiers with hybrid couplers.

A system having a set of power amplifiers each having a primary inductive structure configured to provide an output signal. A secondary inductive structure is configured to inductively couple to each of the primary inductive structures. A transmission line is provided with a signal trace and a ground trace. The signal trace of the transmission line is connected to a first end of the secondary inductive structure. A return path from a second end of the secondary inductive structure is coupled via a resonant network to the ground trace of the transmission line, in which the return path is spaced away from the secondary inductive structure to minimize inductive coupling to the primary structures.

A system having a set of power amplifiers each having a primary inductive structure configured to provide an output signal. A secondary inductive structure is configured to inductively couple to each of the primary inductive structures. A transmission line is provided with a signal trace and a ground trace. The signal trace of the transmission line is connected to a first end of the secondary inductive structure. A return path from a second end of the secondary inductive structure is coupled via a resonant network to the ground trace of the transmission line, in which the return path is spaced away from the secondary inductive structure to minimize inductive coupling to the primary structures.

A radio frequency module has a substrate, a first chip inductor, an integrated circuit, and a first amplifier connected to the first chip inductor. The first chip inductor is on a first main surface of the substrate and the integrated circuit is on a second main surface of the substrate, the second main surface being opposite the first main surface. The integrated circuit includes the first amplifier. When the substrate is viewed from a direction perpendicular to the first main surface of the substrate, the first chip inductor at least partially overlaps the integrated circuit.