Amplifiers can be used for a variety of electronic-based applications. Therefore, amplifier performance is of importance. A low noise amplifier can be interfaced after an antenna or a band-select filter as a first active stage, in a receiver since its bandwidth characteristics can be closely related to a system data rate. A bandwidth enhancement technique can be leverage for low noise amplifiers by embedding a transformer between a gate and a drain terminal of a common gate transistor in a cascode topology. The embedded transformer can introduce an additional high-frequency conjugate zero pair, which can push the gain rolling-off start-up point to a higher frequency, peak the higher frequency gain, and broaden the low noise amplifier gain bandwidth.

A radio frequency (RF) device may include an RF signal source having a selectable frequency, an RF antenna, and an RF power amplifier module coupled between the RF signal source and the RF antenna. The RF power amplifier module may include at least one input tunable cavity impedance matching device, at least one output tunable cavity impedance matching device, and a power amplifier device connected therebetween. A controller may select the selectable frequency of the RF signal source, tune the at least one input tunable cavity impedance matching device based upon the selected frequency, and tune the at least one output tunable cavity impedance matching device based upon the selected frequency.

A radio frequency (RF) device may include an RF signal source having a selectable frequency, an RF antenna, and an RF power amplifier module coupled between the RF signal source and the RF antenna. The RF power amplifier module may include at least one input tunable cavity impedance matching device, at least one output tunable cavity impedance matching device, and a power amplifier device connected therebetween. A controller may select the selectable frequency of the RF signal source, tune the at least one input tunable cavity impedance matching device based upon the selected frequency, and tune the at least one output tunable cavity impedance matching device based upon the selected frequency.

A high frequency power amplifier includes a first high frequency amplifier, a final high frequency amplifier, and a tunable filter. The tunable filter is connected between the first high frequency amplifier and the final high frequency amplifier. The first high frequency amplifier and the final high frequency amplifier are each a multimode/multiband power amplifier. The tunable filter is regulated such that its pass band includes the frequency band of a transmission signal and its attenuation band includes the frequency band of a reception signal in a communication band used in transmission and reception. The pass band and the attenuation band are switched by the tunable filter in accordance with the communication band used in transmission and reception.

A high frequency power amplifier includes a first high frequency amplifier, a final high frequency amplifier, and a tunable filter. The tunable filter is connected between the first high frequency amplifier and the final high frequency amplifier. The first high frequency amplifier and the final high frequency amplifier are each a multimode/multiband power amplifier. The tunable filter is regulated such that its pass band includes the frequency band of a transmission signal and its attenuation band includes the frequency band of a reception signal in a communication band used in transmission and reception. The pass band and the attenuation band are switched by the tunable filter in accordance with the communication band used in transmission and reception.

Power amplifier having staggered cascode layout for enhanced thermal ruggedness. In some embodiments, a radio-frequency (RF) amplifier such as a power amplifier (PA) can be configured to receive and amplify an RF signal. The PA can include an array of cascoded devices connected electrically parallel between an input node and an output node. Each cascoded device can include a common emitter transistor and a common base transistor arranged in a cascode configuration. The array can be configured such that the common base transistors are positioned in a staggered orientation relative to each other.

Power amplifier having staggered cascode layout for enhanced thermal ruggedness. In some embodiments, a radio-frequency (RF) amplifier such as a power amplifier (PA) can be configured to receive and amplify an RF signal. The PA can include an array of cascoded devices connected electrically parallel between an input node and an output node. Each cascoded device can include a common emitter transistor and a common base transistor arranged in a cascode configuration. The array can be configured such that the common base transistors are positioned in a staggered orientation relative to each other.

An amplifier circuit having an improved inter-stage matching network and improved performance. In one embodiment, an RF signal source having an output impedance Z.sub.SOURCE is approximately impedance matched through an inductive tuning circuit to a power amplifier having an input impedance Z.sub.PA. The inductive tuning circuit includes a tunable capacitor element C1 and inductive elements L1, L2, which may be fabricated as stacked conductor coils. Since the capacitance of C1 is tunable, impedance matching is available over a broad range of RF frequencies. Also provided are DC isolation between the RF signal source and the power amplifier, coupling of a voltage source to the output of the RF signal source through L1, and coupling of a bias voltage to the input of the power amplifier through L2.

An amplifier circuit having an improved inter-stage matching network and improved performance. In one embodiment, an RF signal source having an output impedance Z.sub.SOURCE is approximately impedance matched through an inductive tuning circuit to a power amplifier having an input impedance Z.sub.PA. The inductive tuning circuit includes a tunable capacitor element C1 and inductive elements L1, L2, which may be fabricated as stacked conductor coils. Since the capacitance of C1 is tunable, impedance matching is available over a broad range of RF frequencies. Also provided are DC isolation between the RF signal source and the power amplifier, coupling of a voltage source to the output of the RF signal source through L1, and coupling of a bias voltage to the input of the power amplifier through L2.

A radiofrequency power amplifier includes a balun transformer and a plurality of power transistor pairs arranged in a push-pull configuration. The balun transformer has an unbalanced coil extending between a first single-ended signal terminal and a first reference, and a balanced coil extending between a first balanced signal terminal and a second balanced signal terminal. The balun transformer also includes an auxiliary coil electrically isolated from the unbalanced coil and the balanced coil. The auxiliary coil is inductively coupled to the unbalanced coil and extends between a third balanced signal terminal and a fourth balanced signal terminal forming a balanced combiner-divider. An output of a first one of the power transistor pairs is coupled to the first and second balanced signal terminals and an output of a second one of the power transistor pairs is coupled to the third and fourth balanced signal terminals.