Example embodiments relate to hybrid Doherty power amplifier modules. One embodiment includes a printed circuit board having an input RF terminal and an output RF terminal, and on which printed circuit board a primary Doherty amplifier is integrated. The primary Doherty amplifier includes a primary Doherty splitter arranged on the printed circuit board and configured for splitting an input RF signal received at the input RF terminal into a plurality of RF signal components. The primary Doherty amplifier also includes a plurality of amplifying paths, each amplifying path being partially integrated on a semiconductor die of a first kind mounted on the printed circuit board and partially integrated on a semiconductor die of a second kind mounted on the printed circuit board. Further, the primary Doherty amplifier includes a primary Doherty combiner arranged on the printed circuit board.

Example embodiments relate to hybrid Doherty power amplifier modules. One embodiment includes a printed circuit board having an input RF terminal and an output RF terminal, and on which printed circuit board a primary Doherty amplifier is integrated. The primary Doherty amplifier includes a primary Doherty splitter arranged on the printed circuit board and configured for splitting an input RF signal received at the input RF terminal into a plurality of RF signal components. The primary Doherty amplifier also includes a plurality of amplifying paths, each amplifying path being partially integrated on a semiconductor die of a first kind mounted on the printed circuit board and partially integrated on a semiconductor die of a second kind mounted on the printed circuit board. Further, the primary Doherty amplifier includes a primary Doherty combiner arranged on the printed circuit board.

A high-frequency power amplifier apparatus includes: a plurality of amplifiers that respectively amplify a plurality of distributed signals obtained by distributing a high-frequency signal of a predetermined frequency, the amplifiers respectively outputting a plurality of amplified signals; and a cavity-type high-frequency power combiner having a cavity surrounded by a conductor wall, the cavity-type high-frequency power combiner combining together power of the plurality of amplified signals in the cavity by operating in a TE.sub.011 resonance mode with a resonance frequency equal to the predetermined frequency.

A high-frequency power amplifier apparatus includes: a plurality of amplifiers that respectively amplify a plurality of distributed signals obtained by distributing a high-frequency signal of a predetermined frequency, the amplifiers respectively outputting a plurality of amplified signals; and a cavity-type high-frequency power combiner having a cavity surrounded by a conductor wall, the cavity-type high-frequency power combiner combining together power of the plurality of amplified signals in the cavity by operating in a TE.sub.011 resonance mode with a resonance frequency equal to the predetermined frequency.

A power amplifier circuit includes a power amplifier that amplifies the power of a high frequency signal, a power amplifier temperature detector circuit that includes a temperature detection element, the temperature detection element being thermally coupled with the power amplifier, a bias control signal generator circuit that generates a bias control signal for the power amplifier based on a temperature detection signal outputted from the power amplifier temperature detector circuit, and a regulator circuit that stabilizes the temperature detection signal. The power amplifier, the power amplifier temperature detector circuit, and the regulator circuit are formed in a first integrated circuit, and the bias control signal generator circuit is formed in a second integrated circuit. The substrate material (for example, GaAs) of the first integrated circuit has a higher cutoff frequency than the substrate material (for example, SOI) of the second integrated circuit.

A distributed power management apparatus is provided. The distributed power management apparatus includes an envelope tracking (ET) integrated circuit (ETIC) and a distributed ETIC separated from the ETIC. The ETIC is configured to generate a number of ET voltages for a number of power amplifier circuits and the distributed ETIC is configured to generate a distributed ET voltage(s) for a distributed power amplifier circuit(s). In a non-limiting example, the number of power amplifier circuits and the distributed power amplifier circuit(s) can be disposed on opposite sides (e.g., top and bottom) of a wireless device. As such, in embodiments disclosed herein, the ETIC is provided closer to the power amplifier circuits and the distributed ETIC is provided closer to the distributed power amplifier circuit(s). By providing the ETIC and the distributed ETIC closer to the respective power amplifier circuits, it is possible to reduce trace inductance and unwanted signal distortion.

A distributed power management apparatus is provided. The distributed power management apparatus includes an envelope tracking (ET) integrated circuit (ETIC) and a distributed ETIC separated from the ETIC. The ETIC is configured to generate a number of ET voltages for a number of power amplifier circuits and the distributed ETIC is configured to generate a distributed ET voltage(s) for a distributed power amplifier circuit(s). In a non-limiting example, the number of power amplifier circuits and the distributed power amplifier circuit(s) can be disposed on opposite sides (e.g., top and bottom) of a wireless device. As such, in embodiments disclosed herein, the ETIC is provided closer to the power amplifier circuits and the distributed ETIC is provided closer to the distributed power amplifier circuit(s). By providing the ETIC and the distributed ETIC closer to the respective power amplifier circuits, it is possible to reduce trace inductance and unwanted signal distortion.

A direct current (DC)-DC converter that includes a first switching converter and a multi-stage filter is disclosed. The multi-stage filter includes at least a first inductance (L) capacitance (C) filter and a second LC filter coupled in series between the first switching converter and a DC-DC converter output. The first LC filter has a first LC time constant and the second LC filter has a second LC time constant, which is less than the first LC time constant. The first LC filter includes a first capacitive element having a first self-resonant frequency, which is about equal to a first notch frequency of the multi-stage filter.

A direct current (DC)-DC converter that includes a first switching converter and a multi-stage filter is disclosed. The multi-stage filter includes at least a first inductance (L) capacitance (C) filter and a second LC filter coupled in series between the first switching converter and a DC-DC converter output. The first LC filter has a first LC time constant and the second LC filter has a second LC time constant, which is less than the first LC time constant. The first LC filter includes a first capacitive element having a first self-resonant frequency, which is about equal to a first notch frequency of the multi-stage filter.

Various embodiments relate to an apparatus and a method for processing a radio signal in an electronic device. The electronic device may include: a communication processor; and a power amplifier electrically connected to the communication processor, the power amplifier including a first switch, an input port, a first output port, and a second output port, the power amplifier further including a first amplification circuit disposed on a first electrical path between the input port and the first switch, a second amplification circuit disposed on a second electrical path between the first switch and the first output port, and a third amplification circuit disposed on a third electrical path between the first switch and the second output port.