A microwave amplifier having a field effect transistor formed on an upper surface of a substrate. A de-Q'ing section connected to the field effect transistor includes: a de-Q'ing resistive via that passes through the substrate; and a de-Q'ing capacitor having one plate thereof connected a ground plane conductor through the de-Q'ing resistive via.

A microwave amplifier having a field effect transistor formed on an upper surface of a substrate. A de-Q'ing section connected to the field effect transistor includes: a de-Q'ing resistive via that passes through the substrate; and a de-Q'ing capacitor having one plate thereof connected a ground plane conductor through the de-Q'ing resistive via.

Monolithic microwave integrated circuits are provided that include a substrate having a transistor and at least one additional circuit formed thereon. The transistor includes a drain contact extending in a first direction, a source contact extending in the first direction in parallel to the drain contact, a gate finger extending in the first direction between the source contact and the drain contact and a gate jumper extending in the first direction. The gate jumper conductively connects to the gate finger at two or more locations that are spaced apart from each other along the first direction.

Monolithic microwave integrated circuits are provided that include a substrate having a transistor and at least one additional circuit formed thereon. The transistor includes a drain contact extending in a first direction, a source contact extending in the first direction in parallel to the drain contact, a gate finger extending in the first direction between the source contact and the drain contact and a gate jumper extending in the first direction. The gate jumper conductively connects to the gate finger at two or more locations that are spaced apart from each other along the first direction.

A temperature correction circuit and method for maintaining a transistor of a power amplifier in a linear operating region of the transistor. The temperature correction circuit includes a first current source circuit operable to provide a first correction current proportional to an absolute temperature of a semiconductor die including the transistor. The temperature correction circuit also includes a second current source circuit operable to provide a second correction current proportional to a change in temperature of a part of the semiconductor die in which the transistor is located during operation of the transistor. The temperature correction circuit further includes a third current source circuit operable to provide a gain selection current. The temperature correction circuit also includes circuitry for producing a reference current from the first and second correction currents and the gain current. The temperature correction circuit further includes an output for providing the reference current to the transistor.

Examples of an amplifier includes an input divider section having a first path and a second path for branching of an input signal, wherein a passing phase at the first path and a passing phase at the second path are different; a first amplifying element that amplifies a signal input to the first path; a second amplifying element that amplifies a signal input to the second path; an output synthesizing section that performs synthesis of an output of the first amplifying element and an output of the second amplifying element with a third path for transmitting the output of the first amplifying element and a fourth path for transmitting the output of the second amplifying element, wherein a passing phase at the third path and a passing phase at the fourth path are different; and an electromagnetic coupling section that establishes electromagnetic coupling of two signals.

A radio frequency (RF) transmitter includes a power amplifier comprising a plurality of power amplifier cells. At least one digital signal processing module of the RF transmitter is operably coupled to the power amplifier and comprises at least one digital pre-distortion component arranged to apply at least one digital pre-distortion codeword to the plurality of power amplifier cells, wherein the at least one digital pre-distortion codeword is applied to at least one of the plurality of power amplifier cells via a digital filter. A combiner is arranged to combine outputs of the plurality of power amplifier cells thereby generating an analogue RF signal for transmission over an RF interface based at least partly on the digitally filtered at least one digital pre-distortion codeword.

A radio frequency (RF) transmitter includes a power amplifier comprising a plurality of power amplifier cells. At least one digital signal processing module of the RF transmitter is operably coupled to the power amplifier and comprises at least one digital pre-distortion component arranged to apply at least one digital pre-distortion codeword to the plurality of power amplifier cells, wherein the at least one digital pre-distortion codeword is applied to at least one of the plurality of power amplifier cells via a digital filter. A combiner is arranged to combine outputs of the plurality of power amplifier cells thereby generating an analogue RF signal for transmission over an RF interface based at least partly on the digitally filtered at least one digital pre-distortion codeword.

Embodiments of the invention provide an apparatus for amplifying a radio frequency transmission signal, comprising: an envelope signal obtaining unit (210) configured to obtain a slow envelope signal indicating a time averaging amplitude component of the radio frequency signal and a fast envelope signal indicating an instant amplitude component of the radio frequency signal; a supply voltage modulating unit (230) configured to provide an output modulated supply voltage to the power amplifying unit by modulating a direct current supply voltage based on both the slow envelope signal and the fast envelope signal; and a power amplifying unit (220) configured to amplify power of the radio frequency transmission signal according to the output modulated supply voltage.

Embodiments of the invention provide an apparatus for amplifying a radio frequency transmission signal, comprising: an envelope signal obtaining unit (210) configured to obtain a slow envelope signal indicating a time averaging amplitude component of the radio frequency signal and a fast envelope signal indicating an instant amplitude component of the radio frequency signal; a supply voltage modulating unit (230) configured to provide an output modulated supply voltage to the power amplifying unit by modulating a direct current supply voltage based on both the slow envelope signal and the fast envelope signal; and a power amplifying unit (220) configured to amplify power of the radio frequency transmission signal according to the output modulated supply voltage.