Examples of integrated semiconductor devices are described. In one example, an integrated device includes first and second transistors formed on a substrate, where the transistors share a terminal metal feature to reduce a size of the integrated device. The terminal metal feature can include a shared source electrode metalization, for example, although other electrode metalizations can be shared. In other aspects, a first width of a gate of the first transistor can be greater than a second width of a gate of the second transistor, and the shared metalization can taper from the first width to the second width. The integrated device can also include a metal ground plane on a backside of the substrate, and the terminal metal feature can also include an in-source via for the shared source electrode metalization. The in-source via can electrically couple the shared source electrode metalization to the metal ground plane.

An electronic package houses one or more RF amplifier circuits. At least one of an input or output impedance matching network integrated on the package and electrically coupled to the gate or drain bias voltage connection, respectively, of an amplifier circuit, includes a multi-stage decoupling network. Each multi-stage decoupling network includes two or more decoupling stages. Each decoupling stage of the multi-stage decoupling network includes a resistance, inductance, and capacitance, and is configured to reduce impedance seen by the amplifier circuit at a different frequency below an operating band of the amplifier circuit. Bias voltage connections to the impedance matching circuits may be shared, and may be connected anywhere along the multi-stage decoupling network.

An electronic package houses one or more RF amplifier circuits. At least one of an input or output impedance matching network integrated on the package and electrically coupled to the gate or drain bias voltage connection, respectively, of an amplifier circuit, includes a multi-stage decoupling network. Each multi-stage decoupling network includes two or more decoupling stages. Each decoupling stage of the multi-stage decoupling network includes a resistance, inductance, and capacitance, and is configured to reduce impedance seen by the amplifier circuit at a different frequency below an operating band of the amplifier circuit. Bias voltage connections to the impedance matching circuits may be shared, and may be connected anywhere along the multi-stage decoupling network.

In one embodiment, an apparatus includes: a digital baseband circuit to receive a digital baseband signal and output a first digital baseband signal and a second digital baseband signal, the second digital baseband signal comprising a scaled version of the first digital baseband signal; a first transmitter signal path coupled to the digital baseband circuit to process the first digital baseband signal and output a first radio frequency (RF) signal; a second transmitter signal path coupled to the digital baseband circuit to process the second digital baseband signal and output a second RF signal; a first power amplifier coupled to the first transmitter signal path to amplify the first RF signal and output an amplified first RF signal; and a second power amplifier coupled to the second transmitter signal path to amplify the second RF signal and output an amplified second RF signal.

The present disclosure provides a magnetic resonance imaging (MRI) radio frequency (RF) coil assembly. The MRI RF coil assembly may include one or more coils and one or more control circuits. Each of the one or more coils may include a first end and a second end. Each of the one or more control circuits may electrically connect the first end and the second end of one of the one or more coil. Each of the one or more control circuits may be configured to adjust an operation of the coil that is electrically connected with the control circuit based on an input control signal. The one or more control circuits may be located at different regions.

A differential amplifier circuit includes a first and second amplifiers that output a differential signal in a radio-frequency band, a first inductor having a first end connected to an output end of the first amplifier, a second inductor having a first end connected to an output end of the second amplifier, a choke inductor connected to second ends of the first and second inductors, a first and second capacitors, and a switch that connects the second capacitor in parallel to the first capacitor or terminates a parallel connection of the first and second capacitors. A resonant circuit formed by connecting the first or second inductor in series with the first capacitor has a different resonant frequency from a resonant circuit formed by connecting the first or second inductor in series with the parallel-connected first and second capacitors. These resonant frequencies correspond to second harmonic frequencies of the differential signal.

The present disclosure relates to added isolation between transistors in a multiple path amplifier circuit. The multiple path amplifier circuit includes a substrate, a first transistor on the substrate in a first path, and a second transistor on the substrate in a second path. The multiple path amplifier circuit also includes at least one electrical connection associated with the first and the second transistors and positioned to at least partially extend between the first path and the second path.

The present disclosure relates to added isolation between transistors in a multiple path amplifier circuit. The multiple path amplifier circuit includes a substrate, a first transistor on the substrate in a first path, and a second transistor on the substrate in a second path. The multiple path amplifier circuit also includes at least one electrical connection associated with the first and the second transistors and positioned to at least partially extend between the first path and the second path.

Systems and apparatuses are disclosed that include an RF generator configured to generate RF signals having a wavelength. Amplifiers are configured to receive and amplify the RF signals from the RF generator and are separated from each other by a separation distance in a range between about 0.2 times the wavelength and about 10.0 times the wavelength. A power management system is configured to control one or more of the amplifiers based on information received that is associated with the RF signals.

Systems and apparatuses are disclosed that include an RF generator configured to generate RF signals having a wavelength. Amplifiers are configured to receive and amplify the RF signals from the RF generator and are separated from each other by a separation distance in a range between about 0.2 times the wavelength and about 10.0 times the wavelength. A power management system is configured to control one or more of the amplifiers based on information received that is associated with the RF signals.