A cooling structure for a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) includes a plurality of semiconductor strips separated from each other by isolation trenches, each of the semiconductor strips extending away from a transistor P-well disposed on top of a buried oxide (BOX) layer formed in a semiconductor substrate and having first and second ends, the second end being farther than the first end from the transistor P-well. Applying a voltage to the plurality of semiconductor strips may generate, in at least one of the strips, a first area having a reduced temperature closer to the first end than to the second end of the strip and a second area having an increased temperature closer to the second end than to the first end of the strip. The first and second areas may be generated by the Peltier effect.

Provided is a radio-frequency module that includes a module substrate having first and second main surfaces on opposite sides of the module substrate, a resin member that covers the second main surface and includes a first groove and the second groove, a plurality of post electrodes that include a first post electrode and the second post electrode, that are arranged on the second main surface, and that penetrate through the resin member, and a semiconductor component that is arranged between the first post electrode and the second post electrode on the second main surface and that includes a surface that is not covered by the resin member. The first groove is arranged between the first post electrode and the semiconductor component. The second groove is arranged between the second post electrode and the semiconductor component.

An amplifier includes an input matching network; at least one transistor; an input lead coupled to the at least one transistor; a ground terminal coupled to the transistor; an output lead coupled to the at least one transistor; an output matching circuit coupled to the output lead and to the at least one transistor; and a baseband impedance enhancement circuit having at least one reactive element coupled to the input matching network. The baseband impedance enhancement circuit is configured to reduce resonances of a baseband termination.

A system having a set of power amplifiers each having a primary inductive structure configured to provide an output signal. A secondary inductive structure is configured to inductively couple to each of the primary inductive structures. A transmission line is provided with a signal trace and a ground trace. The signal trace of the transmission line is connected to a first end of the secondary inductive structure. A return path from a second end of the secondary inductive structure is coupled via a resonant network to the ground trace of the transmission line, in which the return path is spaced away from the secondary inductive structure to minimize inductive coupling to the primary structures.

A system having a set of power amplifiers each having a primary inductive structure configured to provide an output signal. A secondary inductive structure is configured to inductively couple to each of the primary inductive structures. A transmission line is provided with a signal trace and a ground trace. The signal trace of the transmission line is connected to a first end of the secondary inductive structure. A return path from a second end of the secondary inductive structure is coupled via a resonant network to the ground trace of the transmission line, in which the return path is spaced away from the secondary inductive structure to minimize inductive coupling to the primary structures.

Described herein are systems, architectures, circuits, devices, and methods for a DC-DC converter that dynamically adjusts a supply voltage to a power amplifier based on the number of resource blocks in a signal to be transmitted. The disclosed technologies estimate the number of resource blocks in a signal, generate a signal corresponding to the estimated number of resource blocks, and modify a supply voltage based on the generated signal. These technologies can be used to increase the efficiency of power amplifier systems for cellular signals being transmitted that have fewer resource blocks than is typically assumed (e.g., at least 100 resource blocks).

Described herein are systems, architectures, circuits, devices, and methods for a DC-DC converter that dynamically adjusts a supply voltage to a power amplifier based on the number of resource blocks in a signal to be transmitted. The disclosed technologies estimate the number of resource blocks in a signal, generate a signal corresponding to the estimated number of resource blocks, and modify a supply voltage based on the generated signal. These technologies can be used to increase the efficiency of power amplifier systems for cellular signals being transmitted that have fewer resource blocks than is typically assumed (e.g., at least 100 resource blocks).

A high-frequency module includes an antenna terminal, a transmission signal terminal, a reception signal terminal, a plurality of earth terminals, a switch, a transmission filter, a reception filter, and a multilayer board. The multilayer board includes a ground electrode arranged between the transmission filter and the reception filter. The plurality of earth terminals include a first earth terminal and a second earth terminal. When the high-frequency module is viewed in a direction perpendicular to a principal surface of the multilayer board, the reception signal terminal is provided between the antenna terminal and the transmission signal terminal, the first earth terminal is provided between the antenna terminal and the reception signal terminal, and the second earth terminal is provided between the reception signal terminal and the transmission signal terminal.

A solid state power amplifier uses a Doherty power amplifier that can be implemented as a monolithic microwave integrated circuit. By adjusting the DC bias of the amplifying stages in each branch of the Doherty amplifier, the output power, linearity, and DC power can be adjusted to provide a specified output, where the specification for the output can include the maintaining of desired DC power and linearity. The Doherty power amplifier can be used in a satellite payload or other application utilizing solid state power amplifiers, while providing the proper amount of RF output power and DC power. A single amplifier can have its bias levels adjusted for different output levels, helping to minimize the number of designs that are required for a given satellite payload, reducing the variety of parts in a satellite payload.

A solid state power amplifier uses a Doherty power amplifier that can be implemented as a monolithic microwave integrated circuit. By adjusting the DC bias of the amplifying stages in each branch of the Doherty amplifier, the output power, linearity, and DC power can be adjusted to provide a specified output, where the specification for the output can include the maintaining of desired DC power and linearity. The Doherty power amplifier can be used in a satellite payload or other application utilizing solid state power amplifiers, while providing the proper amount of RF output power and DC power. A single amplifier can have its bias levels adjusted for different output levels, helping to minimize the number of designs that are required for a given satellite payload, reducing the variety of parts in a satellite payload.