Amplifier having input power protection. In some embodiments, an amplifier circuit can include an input node and an output node, and an amplifier implemented between the input node and the output node. The amplifier circuit can further include a bias circuit configured to provide a bias signal to the amplifier. The amplifier circuit can further include a protection circuit configured to generate a detected voltage representative of a peak of a radio-frequency signal present at the input node. The protection circuit can be further configured to enable a protection mode when the detected voltage is greater than a first threshold value and to disable the protection mode when the detected voltage is less than a second threshold value that is less than the first threshold value.

Amplifier having input power protection. In some embodiments, an amplifier circuit can include an input node and an output node, and an amplifier implemented between the input node and the output node. The amplifier circuit can further include a bias circuit configured to provide a bias signal to the amplifier. The amplifier circuit can further include a protection circuit configured to generate a detected voltage representative of a peak of a radio-frequency signal present at the input node. The protection circuit can be further configured to enable a protection mode when the detected voltage is greater than a first threshold value and to disable the protection mode when the detected voltage is less than a second threshold value that is less than the first threshold value.

A radio frequency (RF) device may include an RF signal source having a selectable frequency, an RF antenna, and an RF power amplifier module coupled between the RF signal source and the RF antenna. The RF power amplifier module may include at least one input tunable cavity impedance matching device, at least one output tunable cavity impedance matching device, and a power amplifier device connected therebetween. A controller may select the selectable frequency of the RF signal source, tune the at least one input tunable cavity impedance matching device based upon the selected frequency, and tune the at least one output tunable cavity impedance matching device based upon the selected frequency.

A radio frequency (RF) device may include an RF signal source having a selectable frequency, an RF antenna, and an RF power amplifier module coupled between the RF signal source and the RF antenna. The RF power amplifier module may include at least one input tunable cavity impedance matching device, at least one output tunable cavity impedance matching device, and a power amplifier device connected therebetween. A controller may select the selectable frequency of the RF signal source, tune the at least one input tunable cavity impedance matching device based upon the selected frequency, and tune the at least one output tunable cavity impedance matching device based upon the selected frequency.

An apparatus includes a radio-frequency (RF) circuit, which includes a power amplifier coupled to receive an RF input signal and to provide an RF output signal in response to a modified bias signal. The RF circuit further includes a bias path circuit coupled to modify a bias signal as a function of a characteristic of an input signal to generate the modified bias signal. The bias path circuit provides the modified bias signal to the power amplifier.

An amplifier module includes a module substrate with a mounting surface, a signal conducting layer, a ground layer, and a ground terminal pad at the mounting surface. A thermal dissipation structure extends through the module substrate. A ground contact of a power transistor die is coupled to a surface of the thermal dissipation structure. Encapsulant material covers the mounting surface of the module substrate and the power transistor die, and a surface of the encapsulant material defines a contact surface of the amplifier module. A ground terminal is embedded within the encapsulant material. The ground terminal has a proximal end coupled to the ground terminal pad, and a distal end exposed at the contact surface. The ground terminal is electrically coupled to the ground contact of the power transistor die through the ground terminal pad, the ground layer of the module substrate, and the thermal dissipation structure.

A circuit module (e.g., an amplifier module) includes a module substrate, a thermal dissipation structure, a semiconductor die, encapsulant material, and an interposer. The module substrate has a mounting surface and a plurality of conductive pads at the mounting surface. The thermal dissipation structure extends through the module substrate, and a surface of the thermal dissipation structure is exposed at the mounting surface of the module substrate. The semiconductor die is coupled to the surface of the thermal dissipation structure. The encapsulant material covers the mounting surface of the module substrate and the semiconductor die, and a surface of the encapsulant material defines a contact surface of the circuit module. The interposer is embedded within the encapsulant material. The interposer includes a conductive terminal with a proximal end coupled to a conductive pad of the module substrate, and a distal end exposed at the contact surface of the circuit module.

The disclosure relates to an electronic device and a method for wireless communication including a power amplification circuit. According to an embodiment, an electronic device may include: a radio frequency processing module comprising radio frequency circuitry, a first power amplification circuit connected to the radio frequency processing module, a second power amplification circuit connected to the radio frequency processing module and the first power amplification circuit, and a front-end module comprising circuitry connected to the second power amplification circuit and an antenna and configured to transmit a signal, wherein the second power amplification circuit is configured to acquire, from the first power amplification circuit, a first signal obtained by amplifying a signal output from the radio frequency processing module and a second signal by amplifying a signal output from the radio frequency processing module, based on a combination of frequency bands for a first communication scheme and a second communication scheme, and switch at least one of the first signal or the second signal to at least one output port connected to the front-end module, based on a first frequency band of the first signal and a second frequency band of the second signal. Other embodiments are also possible.

The present disclosure provides a multiple output low noise amplifier circuit, chip and electronic device. The multiple output low noise amplifier circuit includes: a first processing module for amplifying an input voltage signal and converting it into at least two first current signals; a second processing module for impedance matching at the input terminal of the low noise amplifier circuit, and for amplifying the input voltage signal and converting it into at least two second current signals; a voltage output module, connected to the first processing module and the second processing module, for combining the first current signals and the second current signals and converting them into output voltage signals. The low noise amplifier circuit can convert a single input voltage signal to at least two output voltage signals, and is applicable in RF front ends with multiple output terminals.

The present disclosure provides a Multiple Inputs Multiple Ouputs RF front-end amplifier circuit, chip, and electronic device and a method for configuring signal path. The RF front-end amplifier circuit includes: at least two low-noise amplifying modules, each of which amplifies one voltage signal and converts into one or more intermediate current signals; a voltage output module, connected to each of the low-noise amplifying modules, for combining the intermediate current signal output by the low-noise amplifying module and converting them into one or more output voltage signals. The RF front-end amplifier circuit can be applied to an RF front-end with a Multiple Inputs Multiple Outputs structure.