H03F3/211

POWER AMPLIFICATION MODULE

Provided is a power amplification module that includes: a first transistor, a first signal being inputted to a base thereof; a second transistor, the first signal being inputted to a base thereof and a collector thereof being connected to a collector of the first transistor; a first resistor, a first bias current being supplied to one end thereof and another end thereof being connected to the base of the first transistor; a second resistor, one end thereof being connected to the one end of the first resistor and another end thereof being connected to the base of the second transistor; and a third resistor, a second bias current being supplied to one end thereof and another end thereof being connected to the base of the second transistor.

ENVELOPE TRACKING AMPLIFIER APPARATUS
20200295710 · 2020-09-17 ·

An envelope tracking (ET) amplifier apparatus is provided. In examples discussed herein, the ET amplifier apparatus can be configured to operate in a fifth-generation (5G) standalone (SA) mode and a 5G non-standalone (NSA) mode. In the SA mode, the ET amplifier apparatus can enable a first pair of amplifier circuits to amplifier a 5G signal for concurrent transmission in a 5G band(s). In the NSA mode, the ET amplifier apparatus can enable a second pair of amplifier circuits to amplify a non-5G anchor signal and a 5G signal for concurrent transmission in a non-5G anchor band(s) and a 5G band(s), respectively. As such, the ET circuit may be provided in a communication apparatus (e.g., a 5G-enabled smartphone) to help improve power amplifier linearity and efficiency in both 5G SA and NSA modes.

AMPLIFICATION APPARATUS AND TRANSMISSION APPARATUS

An amplification apparatus as the embodiment of the present invention includes a switching amplifier and an adjuster. The switching amplifier is driven on the basis of a control signal and amplifies an input signal to be amplified to generate an amplified signal. The adjuster adjusts at least one of the signal to be amplified and the control signal before being input into the switching amplifier. In addition, the adjuster adjusts so that timing when the control signal turns from LOW to HIGH aligns with timing when the signal to be amplified turns from LOW to HIGH, or aligns with timing when the signal to be amplified turns from HIGH to LOW.

RF phase shifting device
10778190 · 2020-09-15 · ·

A device for phase shifting is disclosed, comprising an input amplifier, a biasing circuit, a first output amplifier and a second output amplifier being variable-gain amplifiers, and a quadrature hybrid coupler. The input amplifier is connected to an input port of the coupler, the first output amplifier is connected to a through port of the coupler, the second output amplifier is connected to a coupled port of the coupler, and the biasing circuit is connected to an isolated port of the coupler. The device also includes, the quadrature hybrid coupler configured to receive, at the input port, an input signal from the input amplifier, output, at the through port, a through signal, receive, at the isolated port, a bias signal from the biasing circuit, and output, at the coupled port, a coupled signal having a phase differing from a phase of the through signal.

Ultra compact multi-band transmitter with robust AM-PM distortion self-suppression techniques

A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. A output passive network can further generate a flat-phase response between dual resonances of operation.

Power amplifier and compound semiconductor device

A power amplifier includes initial-stage and output-stage amplifier circuits, and initial-stage and output-stage bias circuits. The initial-stage amplifier circuit includes a first high electron mobility transistor having a source electrically connected to a reference potential, and a gate to which a radio-frequency input signal is inputted, and a first heterojunction bipolar transistor having an emitter electrically connected to a drain of the first high electron mobility transistor, a base electrically connected to the reference potential in an alternate-current fashion, and a collector to which direct-current power is supplied and from which a radio-frequency signal is outputted. The output-stage amplifier circuit includes a second heterojunction bipolar transistor having an emitter electrically connected to the reference potential, a base to which the radio-frequency signal outputted from the first heterojunction bipolar transistor is inputted, and a collector to which direct-current power is supplied and from which a radio-frequency output signal is outputted.

Power amplifiers having reduced loss
10778149 · 2020-09-15 · ·

Power amplifiers having reduced loss. In some embodiments, a power amplification system can include a plurality of power amplifiers, with each power amplifier being configured to receive and amplify a signal in a frequency band. The power amplification system can further include an output filter coupled to each of the power amplifiers by a separate output path such that the power amplification system is substantially free of a band selection switch between the plurality of power amplifiers and their corresponding output filters. Each power amplifier can be further configured to operate with a high-voltage supply to provide an impedance similar to an impedance of the corresponding output filter.

Rack comprising a high power RF amplifier
10779433 · 2020-09-15 · ·

In accordance with the embodiments of the present disclosure, a rack comprising a frame having first vertical posts on a first side and second vertical posts on a second side, wherein the first side is opposite the second side, between which a plurality of RF amplifier modules are mounted, is provided. The RF power outputs of the RF amplifier modules are connected to inputs of an RF power combiner to deliver a combined RF power output. The RF power combiner is arranged at least partially in at least one of a first volume between the first vertical posts of the frame or a second volume between the second vertical posts of the frame, thereby reducing a footprint of the rack.

Power splitter with cascode stage selection

A power splitter that amplifies an input radio-frequency (RF) signal. The power splitter uses a single transistor in a common emitter stage of a cascode amplifier and two or more common base stages of the cascode amplifier to amplify and to split the input RF signal. A common base biasing signal can be used to simultaneously enable two or more of the common base stages to generate two or more amplified RF output signals.

Multi-mode power management system supporting fifth-generation new radio
10778151 · 2020-09-15 · ·

Embodiments of the disclosure relate to a multi-mode power management system supporting fifth-generation new radio (5G-NR). The multi-mode power management system includes first tracker circuitry and second tracker circuitry each capable of supplying an envelope tracking (ET) modulated or an average power tracking (APT) modulated voltage. In examples discussed herein, the first tracker circuitry and the second tracker circuitry have been configured to support third-generation (3G) and fourth-generation (4G) power amplifier circuits in various 3G/4G operation modes. The multi-mode power management system is adapted to further support a 5G-NR power amplifier circuit(s) in various 5G-NR operation modes based on the existing first tracker circuitry and/or the existing second tracker circuitry. In this regard, the 5G-NR power amplifier circuit(s) can be incorporated into the existing multi-mode power management system with minimum hardware changes, thus enabling 5G-NR support without significantly increasing component count, cost, and footprint of the multi-mode power management system.