Systems and methods related to power amplification and power supply control. A method of operating a power amplification control system can include receiving, by an interface, a transceiver control signal from a transceiver. The method can further include generating, by a power amplifier control component, a power amplifier control signal based on the transceiver control signal from the transceiver. The method can also include generating, by a power supply control component, a power supply control signal based on one or more of the transceiver control signal from the transceiver or a local control signal from the power amplifier control component.

A transistor includes an active region bounded by an outer periphery and formed in a substrate. The active region includes sets of input fingers, output fingers, and common fingers disposed within the substrate and oriented substantially parallel to one another. The transistor further includes an input port, an output port, a first via connection disposed at the outer periphery of the active region proximate the input port and a second via connection disposed at the outer periphery of the active region proximate the output port. The second via connection has a noncircular cross-section with a second major axis and a second minor axis, the second major axis having a second major axis length, the second minor axis having a second minor axis length that is less than the second major axis length. The second major axis is oriented parallel to a longitudinal dimension of the input, output, and common fingers.

Various examples are directed to a power amplifier circuit, comprising a digital predistortion circuit, first and second power amplifiers, and a bias feedback circuit. The digital predistortion circuit may be configured to generate a predistorted input signal based at least in part on an input signal. The first power amplifier may be configured to generate a first amplified signal based at least in part on the predistorted input signal. The second power amplifier may be configured to generate a second amplified signal based at least in part on the predistorted input signal. The bias feedback circuit may be configured to adjust at least one of a bias of the first power amplifier or a bias of the second power amplifier to align a first nonlinear behavior of the first power amplifier with a second nonlinear behavior of the second power amplifier.

An amplifier circuit configuration capable of processing non-contiguous intra-band carrier aggregate (CA) signals using amplifiers is disclosed herein. In some cases, each of a plurality of amplifiers is an amplifier configured as a cascode (i.e., a two-stage amplifier having two transistors, the first configured as a common source input transistor, e.g., input field effect transistor (FET), and the second configured in a common gate configuration as a cascode output transistor, (e.g. cascode output FET). In other embodiments, the amplifier may have additional transistors (i.e., more than two stages and/or stacked transistors). The amplifier circuit configuration can be operated in either single mode or split mode. A switchable coupling is placed between the drain of the input FETs of each amplifier within the amplifier circuit configuration. During split mode, the coupling is added to the circuit to allow some of the signal present at the drain of each input FET to be coupled to the drain of the other input FET.

Various embodiments of the present technology may provide methods and apparatus for an amplifier integrated circuit. The amplifier integrated circuit may provide a low gain bandwidth product to amplify at a higher speed and a high gain bandwidth product to amplify at a lower speed. The amplifier integrated circuit may achieve the low and high gain bandwidth product by generating a first current and a second current through a plurality of sets of series-connected transistors and operating a plurality of switches.

A power amplifier module includes an amplifier transistor and a bias circuit. A first power supply voltage based on a first operation mode or a second power supply voltage based on a second operation mode is supplied to the amplifier transistor. The amplifier transistor receives a first signal and outputs a second signal obtained by amplifying the first signal. The bias circuit supplies a bias current to the amplifier transistor. The bias circuit includes first and second resistors and first and second transistors. The first transistor is connected in series with the first resistor and is turned ON by a first bias control voltage which is supplied when the first operation mode is used. The second transistor is connected in series with the second resistor and is turned ON by a second bias control voltage which is supplied when the second operation mode is used.

A system having a set of power amplifiers each having a primary inductive structure configured to provide an output signal. A secondary inductive structure is configured to inductively couple to each of the primary inductive structures. A transmission line is provided with a signal trace and a ground trace. The signal trace of the transmission line is connected to a first end of the secondary inductive structure. A return path from a second end of the secondary inductive structure is coupled via a resonant network to the ground trace of the transmission line, in which the return path is spaced away from the secondary inductive structure to minimize inductive coupling to the primary structures.

The exemplified disclosure presents a highly power efficient amplifier (e.g., front-end inverter and/or amplifier) that achieves significant current reuse (e.g., 6-time for a 3-stack embodiments) by stacking inverters and splitting the capacitor feedback network. In some embodiments, the exemplified technology facilitates N-time current reuse to substantially reduced power consumption. It is observed that the exemplified disclosure facilitates significant current-reuse operation that significantly boost gain gm while providing low noise performance without increasing power usage. In addition, the exemplified technology is implemented such that current reuse and number of transistor has a generally linear relationship and using fewer transistors as compared to known circuits of similar topology.

A multiple-path amplifier (e.g., a Doherty amplifier) includes a semiconductor die, a radio frequency (RF) signal input terminal, a combining node structure integrally formed with the semiconductor die, and first and second amplifiers (e.g., main and peaking amplifiers) integrally formed with the die. Inputs of the first and second amplifiers are electrically coupled to the RF signal input terminal. A plurality of wirebonds is connected between an output of the first amplifier and the combining node structure. An output of the second amplifier is electrically coupled to the combining node structure (e.g., through a conductive path with a negligible phase delay). A phase delay between the outputs of the first and second amplifiers is substantially equal to 90 degrees. The second amplifier may be divided into two amplifier portions that are physically located on opposite sides of the first amplifier.

A power amplifier includes a semiconductor die, and an amplifier and bias circuit integrally formed with the semiconductor die. The die has opposed first and second sides, and a device bisection line extends between the first and second sides. The bias circuit includes a multi-point input terminal with first and second terminals that are electrically connected through a conductive path that extends across the device bisection line, and one or more bias circuit components connected between the multi-point input terminal and the amplifier. The amplifier may include a field effect transistor (FET) with gate and drain terminals, and the bias circuit component(s) are electrically connected between the multi-point input terminal and the gate terminal. In addition or alternatively, the bias circuit component(s) are electrically connected between a multi-point input terminal and the drain terminal. The one or more components may include a resistor-divider circuit.