A variable load power amplifier that improves the performance of a power amplifier that provides both envelope tracking (ET) and average power tracking (APT). The variable load power amplifier can include a plurality of amplifiers that are each selectively connectable into one of a plurality of parallel combinations, each of the plurality of parallel combinations characterized by a corresponding load line. The variable load power amplifier can also include a plurality of control elements arranged to selectively connect one or more of the plurality of amplifiers into one of the plurality of parallel combinations, each of the plurality of control elements having a respective input terminal provided to receive a respective control signal, each of the plurality of control elements responsive to the respective control signal.

The present disclosure provides a power amplifier and an electrical device. The two-stage power amplifier architecture is tuned staggered before power combining. A previous stage matching network and its input matching are split into a cascaded staggered tuning, such that the center frequency is at frequency point 1 less than the design frequency point and frequency point 2 greater than design frequency point, and then the power combining stage is tuned at the design frequency point. At advanced process nodes (such as 65 nm or below), compared with the known architecture, in-band signal quality and out-of-band filtering effect of the power amplifier chip integrating this architecture will be better when using the same number of transformers (same area), the reliability will be better. Due to its good flatness within the band, this architecture is especially suitable for carrier aggregation communication occasions.

Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed. The bulk acoustic wave components can be plasma diced along the exposed streets to thereby singulate the bulk acoustic wave components

Aspects of this disclosure relate to bulk acoustic wave components. A bulk acoustic wave component can include a substrate, at least one bulk acoustic wave resonator on the substrate, and a cap enclosing the at least one bulk acoustic wave resonator. The cap can include a sidewall spaced apart from an edge of the substrate. The sidewall can be 5 microns or less from the edge of the substrate.

A multi-voltage generation circuit and related envelope tracking (ET) amplifier apparatus is provided. In one aspect, a multi-voltage generation circuit is configured to generate a number of ET target voltages based on an analog voltage signal. In another aspect, a multi-amplifier ET circuit can be configured to include a number of amplifier circuits for amplifying concurrently a radio frequency (RF) signal based on a number of ET voltages. The multi-amplifier ET circuit also includes a number of driver circuits configured to generate the ET voltages base on a number of ET target voltages. In this regard, the multi-voltage generation circuit can be provided in the multi-amplifier ET circuit to generate the ET target voltages based on the analog voltage signal that corresponds to the RF signal. In examples discussed herein, the driver circuits are co-located with the amplifier circuits to help improve efficiency and maintain linearity in the amplifier circuits.

A distributed envelope tracking (ET) amplifier circuit and related apparatus are provided. The distributed ET amplifier apparatus includes an amplifier circuit configured to amplify a radio frequency (RF) signal based on a modulated voltage. In examples discussed herein, the amplifier circuit is co-located with an ET voltage circuit configured to supply the modulated voltage such that a trace inductance between the amplifier circuit and the ET voltage circuit can be reduced to below a defined threshold. By co-locating the amplifier circuit with the ET voltage circuit to reduce a coupling distance between the amplifier circuit and the ET voltage circuit and thus the trace inductance associated with the coupling distance, it may be possible to reduce degradation in the modulated voltage. As a result, it may be possible to improve efficiency and maintain linearity in the amplifier circuit, particularly when the RF signal is modulated at a higher modulation bandwidth.

A distributed envelope tracking (ET) amplifier circuit and related apparatus are provided. The distributed ET amplifier apparatus includes an amplifier circuit configured to amplify a radio frequency (RF) signal based on a modulated voltage. In examples discussed herein, the amplifier circuit is co-located with an

ET voltage circuit configured to supply the modulated voltage such that a trace inductance between the amplifier circuit and the ET voltage circuit can be reduced to below a defined threshold. By co-locating the amplifier circuit with the ET voltage circuit to reduce a coupling distance between the amplifier circuit and the ET voltage circuit and thus the trace inductance associated with the coupling distance, it may be possible to reduce degradation in the modulated voltage. As a result, it may be possible to improve efficiency and maintain linearity in the amplifier circuit, particularly when the RF signal is modulated at a higher modulation bandwidth.

A power amplifier (PA) system is provided for multi-mode multi-band operations. The PA system includes one or more amplifying modules, each amplifying module including one or more banks, each bank comprising one or more transistors; and a plurality of matching modules, each matching module being configured to be adjusted to provide impedances corresponding to frequency bands and conditions. A controller dynamically controls an input terminal of each bank and adjusts the matching modules to provide a signal path to meet specifications on properties associated with signals during each time interval.

A system and method for packaging a semiconductor device that includes a wall to reduce electromagnetic coupling is presented. A semiconductor device has a substrate on which a first circuit and a second circuit are formed proximate to each other. An isolation wall of electrically conductive material is located between the first circuit and the second circuit, the isolation wall being configured to reduce inductive coupling between the first and second circuits during an operation of the semiconductor device. Several types of isolation walls are presented.

An N-way RF power amplifier device includes a power divider, multiple first power amplifier circuits, multiple second power amplifier circuits, and a power combiner. The power divider divides an RF input signal into multiple differential signal pairs each including complementary first and second division signals. The first power amplifier circuits amplify the first division signals and the second power amplifier circuits amplify the second division signals in such a way that the amplified first division signals and the amplified second division signals have the same phase. The power combiner combines the amplified first and second division signals into an RF output signal.