A single semiconductor device package that reduces electromagnetic coupling between elements of a semiconductor device embodied within the package is provided. For a dual-path amplifier, such as a Doherty power amplifier, an isolation feature that separates carrier amplifier elements from peaking amplifier elements is included within the semiconductor device package. The isolation feature can take the form of a structure that is constructed of a conductive material coupled to ground and which separates the elements of the amplifier. The isolation feature can be included in a variety of semiconductor packages, including air cavity packages and overmolded packages. Through the use of the isolation feature provided by embodiments of the present invention a significant improvement in signal isolation between amplifier elements is realized, thereby improving performance of the dual-path amplifier.

A linearization circuit reduces intermodulation distortion in an amplifier that includes a first stage and a second stage. The linearization circuit receives a first signal that includes a first frequency and a second frequency and generates a difference signal having a frequency approximately equal to the difference of the first frequency and the second frequency, generates an envelope signal based at least in part on a power level of the first signal, and adjusts a magnitude of the difference signal based on the envelope signal. When the amplifier receives the first signal at an input terminal, the first stage receives the adjusted signal, and the second stage does not receive the adjusted signal, intermodulation between the adjusted signal and the first signal cancels at least a portion of the intermodulation between the first frequency and the second frequency from the output of the amplifier.

A linearization circuit that reduces intermodulation distortion in an amplifier output receives a first signal that includes a first frequency and a second frequency and generates a difference signal having a frequency approximately equal to the difference of the first frequency and the second frequency. The linearization circuit generates an envelope signal based at least in part on a power level of the first signal and adjusts a magnitude of the difference signal based on the envelope signal. When the amplifier receives the first signal at an input terminal and the adjusted signal at a second terminal, intermodulation between the adjusted signal and the first signal cancels at least a portion of the intermodulation products that result from the intermodulation of the first frequency and the second frequency.

In a general aspect, a circuit can include an amplifier circuit including a first amplifier, a first feedback path, and a second feedback path. The first feedback path can provide a feedback path from a positive output of the first amplifier to a negative input of the first amplifier. The second feedback path can provide a feedback path from a negative output of the first amplifier to a positive input of the first amplifier, The circuit can also include a loop circuit including a second amplifier, The loop circuit can be configured to provide a local feedback loop for the first amplifier and configured to control current flow into the positive input of the first amplifier and into the negative input of the first amplifier.

The purpose of the present invention is to provide an amplifier having high signal-to-noise ratio of a transmitted signal and high electrical efficiency. Another purpose is to suppress complexity of amplifier's wiring connecting a signal generator that generates a binary digital signal and an amplification unit that amplifies the same. This amplifier generates a binary digital signal. The amplifier further generates a K-value digital signal (K is an integer greater than or equal to 3) from the binary digital signal and generating a plurality of binary digital signals from the K-value digital signal. The amplifier amplifies each of the plurality of binary digital signals, and combines the plurality of amplified binary digital signals and generating a combined signal having a substantially proportional relationship with the K-value digital signal.

A power amplifier device includes a first amplifier, a second amplifier, a capacitor, a node, and an impedance matching circuit. The second amplifier amplifies a radio frequency signal transmitted from the first amplifier. The capacitor is coupled between an output terminal of the first amplifier and an input terminal of the second amplifier. The node is disposed between the input terminal of the second amplifier and the capacitor. The impedance matching circuit is coupled to the node and a common voltage terminal. The impedance matching circuit is substantially an open circuit at a center frequency of the radio frequency signal. The impedance matching circuit provides substantially a short-circuited path from the node to the common voltage terminal at a frequency twice the center frequency.

The present disclosure provides an output matching pattern of a power amplifier module. The output matching pattern of the power amplifier module includes a first transmission line and a second transmission line. The first transmission line, in a circuit board, is configured for impedance conversion, and is configured to transfer a signal. The second transmission line, in the circuit board, is configured to sample the signal from the first transmission line. The first transmission line and the second transmission line are separate from each other, and extend and trend in the same direction.

An active device and circuits utilized therewith are disclosed. In an aspect, the active device comprises an n-type transistor having a drain, gate and bulk and a p-type transistor having a drain, gate and bulk. The n-type transistor and the p-type transistor include a common source. The device includes a first capacitor coupled between the gate of the n-type transistor and the gate of the p-type transistor, a second capacitor coupled between the drain of the n-type transistor and the drain of p-type transistor and a third capacitor coupled between the bulk of the n-type transistor and the bulk of p-type transistor. The active device has a high breakdown voltage, is memory less and traps even harmonic signals.

A quasi-differential amplifier with an input port and an output port. The amplifier has a phase shifter network with a first port connected to the input port, a second port, and a third port. A first amplifier has an input connected to the second port of the phase shifter network, and an output, and a second amplifier has an input connected to the third port of the phase shifter network, and an output. A balun circuit includes a first differential port connected to an output of the first amplifier, a second differential port connected to an output of the second amplifier, and a single-ended port. An output matching network is connected to the single-ended port of the balun circuit and to the output port.

An embodiment of a Doherty amplifier module includes a substrate, an RF signal splitter, a carrier amplifier die, and a peaking amplifier die. The RF signal splitter divides an input RF signal into first and second input RF signals, and conveys the first and second input RF signals to first and second splitter output terminals. The carrier amplifier die includes one or more first power transistors configured to amplify, along a carrier signal path, the first input RF signal to produce an amplified first RF signal. The peaking amplifier die includes one or more second power transistors configured to amplify, along a peaking signal path, the second input RF signal to produce an amplified second RF signal. The carrier and peaking amplifier die are coupled to the substrate so that the RF signal paths through the carrier and peaking amplifier die extend in substantially different (e.g., orthogonal) directions.