Patent classifications
H03F3/211
Bias control for stacked transistor configuration
Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage that varies according to a control voltage. The control voltage can be related to a desired output power of the amplifier and/or to an envelope signal of an input signal to the amplifier. Particular biasing for selectively controlling the stacked transistors to operate in either a saturation region or a triode region is also presented. Benefits of such controlling, including increased linear response of an output power of the amplifier, are also discussed.
Enhanced amplifier efficiency through cascode current steering
According to some implementations, a power amplifier (PA) includes a common emitter configured to receive a radio-frequency (RF) signal. The PA also includes a carrier amplifier coupled to the common emitter to form a carrier cascode configuration, a collector of the carrier amplifier provided with a first supply voltage. The PA further includes a peaking amplifier coupled to the common emitter to form a peaking cascode configuration, a collector of the peaking amplifier provided with a second supply voltage greater than the first supply voltage.
POWER AMPLIFIER WITH SUPPLY SWITCHING
A power amplifier with supply switching is provided. The power amplifier detects a magnitude of an outgoing broadband communication signal and determines whether the magnitude exceeds a predetermined voltage threshold. The power amplifier applies a first gain to the outgoing broadband communication signal using a first voltage supply rail when it is determined that the magnitude exceeds the predetermined voltage threshold and a second gain using a second voltage supply rail that is smaller than the first voltage supply rail when it is determined that the magnitude does not exceed the predetermined voltage threshold. The power amplifier produces an output signal from the outgoing broadband communication signal with the applied first gain or the applied second gain, wherein a current of the outgoing broadband communication signal is switched between the first voltage supply rail and the second voltage supply rail in response to the magnitude being detected.
ENVELOPE TRACKING POWER MANAGEMENT CIRCUIT
An envelope tracking (ET) power management circuit is provided. The ET power management circuit includes an amplifier circuit(s) configured to output a radio frequency (RF) signal at a defined power level corresponding to a direct current, an alternating current, and an ET modulated voltage received by the amplifier circuit(s). The ET power management circuit can operate in a high-power ET mode when the defined power level exceeds a defined power level threshold and the RF signal is modulated to include no more than a defined number of resource blocks. The ET power management includes two ET tracker circuitries each generating a respective ET modulated voltage and two charge pump circuitries each generating a respective current. In the high-power ET mode, both charge pump circuitries are activated to each provide a reduced current to the amplifier circuit, thus helping to reduce a footprint and cost of the ET power management circuit.
BIPOLAR TRANSISTOR AND RADIO-FREQUENCY POWER AMPLIFIER MODULE
A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.
Apparatus and method for variable voltage distribution
Apparatus and methods for providing variable regulated voltages are disclosed. Variable voltage control elements can adjust a regulated voltage provided by a single voltage regulator, thereby providing a variable regulated voltage. The regulated voltage can be used in a variety of applications, for example, as a bias voltage for a power amplifier.
Outphased spatial combiner
Spatially combining signals may include receiving a number of RF input signals at a number of RF input connectors. At least one of the RF input signals is a variable envelope signal. A variable envelope signal is converted into two or more outphased constant envelope signals. The two or more outphased constant envelope signals are amplified. The amplified outphased constant envelope signals are radiated. At a spatial combiner aperture, the radiated amplified outphased constant envelope signals are combined to create a combined signal. The combined signal is output onto an output RF connector.
Active transformer, corresponding apparatus and method
A distributed active transformer includes an input transformer set and an output transformer set. Active stages are coupled between a transformer in the input transformer set and a transformer in the output transformer set. The input and output transformer sets are each configured as a slab transformer. The input slab transformer includes a single primary slab and many secondary slabs. The output slab transformer includes many primary slabs and a single secondary slab.
Tunable filter for LTE bands
A tunable filter reduces the total number of filters used in TDD (Time-Division Duplex) communication circuitry. The communication circuitry may include a tunable filter and a first switch associated with the tunable filter. The tunable filter may include a tuning component and a filtering component. The tuning component may be located with the first switch on a first die. The filtering component may be located in a laminate underneath the first switch. Power amplifiers for amplifying transmission signals may be located on a second die, and the second die may be located on the laminate.
Multi-power amplification
An amplification circuit includes: an input stage including a driver; a transformer that includes a primary winding and a secondary winding, the primary winding being coupled to an output of the driver; and an output stage including: an output configured to be coupled to a load; and a plurality of paths coupled to the output and coupled to respective taps of the secondary winding; where at least one of the plurality of paths comprises a power amplifier.