A transmission apparatus is provided with: a plurality of amplification units that amplify RF signals arranged in at least 2 bands; a first control unit that selects amplification units that perform an amplification operation, from among the plurality of amplification units, in accordance with total power of RF signals to be transmitted; a second control unit which, in accordance with a power ratio of the RF signals to be transmitted in respective bands, changes the power ratio of the RF signals in the respective bands while keeping constant the total power of the RF signals received at each of the selected amplification units; and a combining unit that combines the RF signals outputted by the selected amplification units.

A wireless communication device includes a signal generator supply a signal to an input node to which a power amplifier is connected. The power amplifier includes an inverter including a first transistor with a gate connected to the input node via a first signal path and a second transistor with a gate electrode connected to the input node via a second signal path. An output signal corresponding to the signal supplied to the input node is supplied from an output node between the first and second transistors. A filter is connected to the output node and outputs a filtered signal having a high frequency component removed. A bias application unit applies a first bias voltage to the first signal path and a second bias voltage to the second signal path. Levels of the bias voltages being set according to a direct current component in the filtered signal.

A power amplifier is described that includes a balanced amplifier arrangement having an input quadrant coupler and output quadrant coupler and two amplifiers, which may include or consist of single transistors, there between. The power amplifier also can provide a signal to an isolated port of the output coupler in order to provide impedance matching. This arrangement dispenses with the need for transistor matching networks at the output of the two amplifiers, which in turn enables the power amplifier to be operable over a wider frequency range as compared with a Doherty power amplifier.

Size reduction is enabled. A power amplifying circuit includes a splitter, a first amplifier, a second amplifier, and a third amplifier. The splitter splits an input signal into a first signal and a second signal. The first amplifier has a first input terminal and a first output terminal, amplifies the first signal, and outputs a first amplified signal. The second amplifier has a second input terminal and a second output terminal, amplifies the second signal, and outputs a second amplified signal. The third amplifier has a third input terminal and a third output terminal, amplifies the first signal, and outputs a third amplified signal. The first output terminal and the second output terminal are connected to each other, the third input terminal is connected to the first input terminal, and the third output terminal is connected to the second output terminal.

Apparatuses and systems implementing an amplifier module are described. The amplifier module can include a substrate. A driver amplifier die, a splitter network, an output amplifier die, a bias controller, and a combiner network can be coupled to the substrate. The driver amplifier die can be configured to receive an input radio frequency (RF) signal. The splitter network can be configured to split an intermediate RF signal outputted from the driver amplifier die into first and second RF signals. The output amplifier die can be configured to receive the first and second RF signals. The bias controller can be configured to bias the driver amplifier die and the output amplifier die. The combiner network can be configured to combine first and second outputs of the output amplifier die to generate an output RF signal and terminate at least one harmonic of the output amplifier die's output impedance.

The disclosure relates to a 5th generation (5G) or a pre-5G communication system for supporting a higher data transmission rate after a 4th generation (4G) communication system such as long-term evolution (LTE). A Doherty power amplifier of a wireless communication system is provided. The Doherty power amplifier includes a first power amplifier, a second power amplifier, a first transmission line connected to an output end of the first power amplifier, a second transmission line connected to an input end of the second power amplifier, a first network, and a second network, the first network may interconnect a first node connected with one end of the first transmission line and a second node connected with an output end of the second power amplifier, the one end of the first transmission line may be positioned on an opposite side with respect to the output end of the first power amplifier, and the second network may connect the first node, the second node, and a third node which is an output end of the Doherty power amplifier.

Described are an amplifier circuits, systems, and methods for amplifying a plurality of sinusoid signals having a relative phase difference to each other. The amplifier circuit comprises a first sequence of at least three transistor amplifiers, wherein a first terminal of each transistor amplifier of the first sequence is configured to receive one respective signal of the plurality sinusoid signals. The amplifier further comprises a second sequence of at least three transistor amplifiers. A second terminal of each transistor amplifier of the second sequence is connected to a third terminal of one respective transistor amplifier of the first sequence. A first terminal of each transistor amplifier of the second sequence is connected to the third terminal of a next transistor amplifier of the second sequence. The first terminal of a last transistor amplifier is connected to the third terminal of a first transistor amplifier.

Circuits for protecting devices, such as gallium nitride (VcclGaN) devices, and operating methods thereof are described. The circuits monitor a magnitude of the current in a device and reduce the magnitude of the current and/or shut down the device responsive to the magnitude of the current exceeding a threshold. These circuits safeguard devices from damaging operating conditions to prolong the operating life of the protected devices.

An amplifier, communication device and method of amplification are disclosed. An RF signal is amplified by a Doherty power amplifier (DPA). The DPA has a main amplifier with a Class-AB amplifier in parallel with a Class-C amplifier. When the RF signal power is smaller than 6 dB PBO, the Class-AB amplifier provides the main amplifier amplification; when the RF signal is between 6 dB PBO and 0 dB PBO, both the Class-AB and Class-C amplifiers provide the main amplifier amplification.

A power amplifier may include a first amplifying circuit configured to amplify an input RF signal; a second amplifying circuit connected to the first amplifying circuit in parallel configured to amplify the input RF signal; and a controller connected to at least one of the first amplifying circuit and the second amplifying circuit and configured to output a control signal in order to control an on-off state of at least one of the first amplifying circuit and the second amplifying circuit. Such an approach provides high efficiency without adding significant complexity to the power amplifier.