An amplifier includes a semiconductor substrate. A first conductive feature partially covers the bottom substrate surface to define a conductor-less region of the bottom substrate surface. A first current conducting terminal of a transistor is electrically coupled to the first conductive feature. Second and third conductive features may be coupled to other regions of the bottom substrate surface. A first filter circuit includes an inductor formed over a portion of the top substrate surface that is directly opposite the conductor-less region. The first filter circuit may be electrically coupled between a second current conducting terminal of the transistor and the second conductive feature. A second filter circuit may be electrically coupled between a control terminal of the transistor and the third conductive feature. Conductive leads may be coupled to the second and third conductive features, or the second and third conductive features may be coupled to a printed circuit board.

An LNA having a plurality of paths, each of which can be controlled independently to achieve a gain mode. Each path includes at least an input FET and an output FET coupled in series. A gate of the output FET is controlled to set the gain of the LNA. Signals to be amplified are applied to the gate of the input FET. Additional stacked FETs are provided in series between the input FET and the output FET.

An amplification circuit includes a first switching circuit that includes input terminals and first and second output terminals and that puts the second output terminal into an open state with respect to the input terminals while selectively putting the first output terminal into a state of being connected to any of the input terminals or selectively puts the second output terminal into a state of being connected to any of input terminals while putting the first output terminal into a state of being open with respect to the input terminals; a matching network that is connected to the first output terminal; an amplifier that is connected to an output side of the matching network; a second switching circuit that is connected to an output side of the amplifier; and a bypass path that electrically connects the second output terminal and an output terminal of the second switching circuit. The amplifier is a variable-gain amplifier.

Metal pillars are placed adjacent to NPN transistor arrays that are used in the power amplifier for RF power generation. By placing the metal pillars in intimate contact with the silicon substrate, the heat generated by the NPN transistor arrays flows down into the silicon substrate and out the metal pillar. The metal pillar also forms an electrical ground connection in close proximity to the NPN transistors to function as a grounding point for emitter ballast resistors, which form an optimum electrothermal configuration for a linear SiGe power amplifier.

A power amplifier circuit, including: an input node configured to receive a radio frequency (RF) signal; an output node configured to output an amplified RF signal; a main path switchably coupled between the input node and the output node, and including a first plurality of amplification stages to generate a first amplified RF signal; a bypass path switchably coupled between the input node and the output node, and including at least one second amplification stage to generate a second amplified RF signal; and a coupling switch configured to reuse at least a portion of the bypass path to drive the main path to generate a third amplified RF signal.

Metal pillars are placed adjacent to NPN transistor arrays that are used in the power amplifier for RF power generation. By placing the metal pillars in intimate contact with the silicon substrate, the heat generated by the NPN transistor arrays flows down into the silicon substrate and out the metal pillar. The metal pillar also forms an electrical ground connection in close proximity to the NPN transistors to function as a grounding point for emitter ballast resistors, which form an optimum electrothermal configuration for a linear SiGe power amplifier.

Multi-band power amplification system having enhanced efficiency through elimination of band selection switch. In some embodiments, a power amplification system can include a plurality of power amplifiers (PAs), with each PA being configured to receive and amplify a radio-frequency (RF) signal in a frequency band. The power amplification system can further include an output filter coupled to each of the PAs by a separate output path such that the power amplification system is substantially free of a band selection switch between the plurality of PAs and their corresponding output filters. Each PA can be further configured to drive approximately a characteristic load impedance of the corresponding output filter by, for example, the PA being operated with a high-voltage (HV) supply.

Package assemblies for improving heat dissipation of high-power components in microwave circuits are described. A laminate that includes microwave circuitry may have cut-outs that allow high-power components to be mounted directly on a heat slug below the laminate. Electrical connections to circuitry on the laminate may be made with wire bonds. The packaging allows more flexible design and tuning of packaged microwave circuitry.

In some implementations, there is provided an apparatus comprising a resonant amplifier circuit including a first inductor having a first inductive input and a first inductive output; a second inductor having a second inductive input and a second inductive output; a first switch coupled to the first inductive output; and a second switch coupled to the second inductive output, wherein the first switch and the second switched are driven out of phase, wherein the first inductor is configured to be resonant with a first capacitance associated with the first switch, and wherein the second inductor is configured to be resonant with a second capacitance associated with the second switch. Related systems and articles of manufacture are also provided.

An amplification circuit includes: a current source; a first input transistor pair suitable for receiving a positive input voltage and having a split-length gate structure; a second input transistor pair suitable for receiving a negative input voltage and having a split-length gate structure; an enable unit suitable for supplying a current from the current source to each of the first input transistor pair and the second input transistor pair in response to an enable signal; a switching unit suitable for coupling a second split gate node between the second input transistor pair to a compensation capacitor node during an activation section of the enable signal; and a compensation driving unit suitable for compensating and driving a first split gate node between the first input transistor pair at an initial stage of the activation section of the enable signal.