A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier configured to amplify a transmission signal; a first circuit component; and a power amplifier (PA) control circuit configured to control the power amplifier. The power amplifier and the PA control circuit are stacked on the first principal surface, and the first circuit component is disposed on the second principal surface.

A power generator is disclosed for use with a medical tool used to perform a medical ablation procedure. The power generator comprises a power supply configured to generate a DC voltage, a phase shifter configured to shift signal transmission phase angles, a plurality of switched-mode amplifiers each configured to convert the DC voltage received from the power supply to an AC voltage signal. The power generator also comprises a processor configured to control a phase shift of each AC voltage signal converted by the switched-mode amplifiers and an amplitude of each AC voltage signal converted by the switched-mode amplifiers. Each AC voltage signal is provided to one of a plurality of ablation electrodes of a medical tool.

An amplifier with stacked transconducting cells in “current mode combining” is disclosed herein. In one or more embodiments, a method for operation of a high-voltage signal amplifier comprises inputting, into each transconducting cell of a plurality of transconducting cells, a direct current (DC) supply current (Idc), an alternating current (AC) radio frequency (RF) input current (I.sub.RF_IN), and an RF input signal (RF.sub.IN). The method further comprises outputting, by each of the transconducting cells of the plurality of transconducting cells, the DC supply current (Idc) and an AC RF output current (I.sub.RF_OUT). In one or more embodiments, the transconducting cells are connected together in cascode for the DC supply current, and are connected together in cascade for the AC RF input and output currents.

An amplifier circuit (1) includes a FET (10) having a source terminal (S1), a drain terminal (D1), and a gate terminal (G1), a FET (20) having a source terminal (S2), a drain terminal (D2), and a gate terminal (G2) and coupled in parallel with the FET (10), a FET (30) having a source terminal (S3) coupled to the drain terminals (D1 and D2), a drain terminal (D3), and a gate terminal (G3) and cascoded with the FETs (10 and 20), and feedback circuits (21 and 22) configured to feed back to the gate terminal (G2) a high frequency signal outputted from the source terminal (S2) or the drain terminal (D2).

A power splitter for use in an amplifier (e.g., a Doherty amplifier) includes an input terminal, and first and second output terminals. The input terminal is configured to receive an input RF signal, the first output terminal is configured to produce a first RF output signal, and the second output terminal is configured to produce a second RF output signal. The power splitter also includes a first capacitance electrically coupled between the input terminal and the first output terminal, a second capacitance electrically coupled between the input terminal and the second output terminal, a first inductance electrically coupled between the input terminal and a ground reference node, a second inductance electrically coupled between the first output terminal and the ground reference node, a third inductance electrically coupled between the second output terminal and the ground reference node, and a resistance electrically coupled between the first and second output terminals.

A multistage Doherty power amplifier and a transmitter are provided, and the multistage Doherty power amplifier includes: a generalized carrier amplifier, which is a nested 2-way inverted Doherty sub amplifier, and a generalized peaking amplifier, connected to the generalized carrier amplifier, which is a nested single ended sub amplifier or a nested 2-way normal Doherty sub amplifier, the generalized carrier amplifier and the generalized peaking amplifier are arranged in a generalized 2-way inverted Doherty power amplifier form. With the multistage Doherty power amplifier, signal power probability distribution function (PDF) oriented for a cost-effective multi stage Doherty PA design is applied, and 2-way normal and inverted Doherty PA cells are used as basic units to construct multistage Doherty PA with gain extension effect.

A piecewise linear gain amplifier circuit includes a differential preamplifier and a plurality of transconductors. The differential preamplifier is electrically coupled to a differential input having an input voltage. The transconductors are electrically coupled in parallel with each other. Each transconductor includes a respective differential input that is electrically coupled to a differential output of the differential preamplifier. In addition, each transconductor includes a respective differential output that is electrically coupled to a common differential PWL output. Each transconductor has a different linear input range. An optional attenuation circuit can be electrically coupled in parallel to the differential preamplifier. The differential output of the attenuation circuit can be electrically coupled to a differential input of another transconductor, and that transconductor can have a differential output that is electrically coupled to the common differential PWL output.

A Doherty amplifier circuit having a tunable impedance and phase (“TIP”) circuit to provide an adjustable alpha factor, which allows for a selection of power added efficiency (PAE) curves that are useful for applications having different modulations or to meet other criteria. Embodiments include a Doherty amplifier having a TIP circuit that provides for tunability of the impedance Z.sub.INV (resulting in an adjustable alpha factor) while maintaining the phase of the output of the carrier amplifier at 90° (for a selected polarity) ±a low phase variation. Embodiments of the TIP circuit include one or more series-connected TIP cells comprising at least one TIP circuit combined with a tunable phase adjustment circuit. In operation, when the impedance of a TIP cell is adjusted, adjustments within the cell are also made to provide a phase shift correction back towards 90° (at the selected polarity).

The present disclosure provides a multiple output low noise amplifier circuit, chip and electronic device. The multiple output low noise amplifier circuit includes: a first processing module for amplifying an input voltage signal and converting it into at least two first current signals; a second processing module for impedance matching at the input terminal of the low noise amplifier circuit, and for amplifying the input voltage signal and converting it into at least two second current signals; a voltage output module, connected to the first processing module and the second processing module, for combining the first current signals and the second current signals and converting them into output voltage signals. The low noise amplifier circuit can convert a single input voltage signal to at least two output voltage signals, and is applicable in RF front ends with multiple output terminals.

The present disclosure provides a Multiple Inputs Multiple Outputs RF front-end amplifier circuit, chip, and electronic device and a method for configuring signal path. The RF front-end amplifier circuit includes: at least two low-noise amplifying modules, each of which amplifies one voltage signal and converts into one or more intermediate current signals; a voltage output module, connected to each of the low-noise amplifying modules, for combining the intermediate current signal output by the low-noise amplifying module and converting them into one or more output voltage signals. The RF front-end amplifier circuit can be applied to an RF front-end with a Multiple Inputs Multiple Outputs structure.