Systems and devices are provided for tracking bandgap current generated by a bandgap circuit and mitigation of leakage current regardless of variations in PVT conditions. An apparatus may include one or more power amplifiers that powers components of the apparatus and comprising a transistor. The apparatus may also include bandgap current mirroring circuitry that generates a mirrored current that mirrors a received current that is process, voltage, and temperature (PVT) independent. The apparatus may also include a bulk voltage generator circuit including an amplifier having an input coupled to the bandgap current mirroring circuitry. Bulk voltage control circuitry is coupled to an output of the amplifier and generates a bulk voltage based on the relationship between the mirrored current and the leakage current.

Apparatus and methods for an improved-efficiency Doherty amplifier are described. The Doherty amplifier may include a two-stage peaking amplifier that transitions from an “off” state to an “on” state later and more rapidly than a single-stage peaking amplifier used in a conventional Doherty amplifier. The improved Doherty amplifier may operate at higher gain values than a conventional Doherty amplifier, with no appreciable reduction in signal bandwidth.

A power amplifier system is disclosed having a first stage amplifier that includes a first supply terminal, a first input, and a first output. A second stage amplifier has a second supply terminal, a second input, and a second output. A first stage bias circuitry has a bias output coupled to a bias input of the first stage amplifier and a bias control input. Absolute maximum ratings protection circuitry has a voltage monitoring input coupled to the second supply terminal and a bias control output coupled to the bias control input, wherein the absolute maximum ratings protection circuitry is configured to reduce the bias of the first stage amplifier through the bias control output based upon voltage monitored at the voltage monitoring input exceeding a predetermined voltage level. Additional absolute maximum ratings protection circuitry reduces the bias of the first stage amplifier if first stage amplifier supply voltage is excessive.

A multi-transmission power management circuit is provided. In embodiments disclosed herein, the multi-transmission power management circuit includes multiple quadrature power amplifier circuits each configured to concurrently generate multiple amplified radio frequency (RF) signals based on a respective modulated voltage(s). The multi-transmission power management circuit also includes an envelope tracking (ET) integrated circuit (ETIC) configured to concurrently generate multiple modulated voltages. A control circuit is configured to determine one or more of the multiple quadrature power amplifier circuits that are involved in a multi-transmission scheme. Accordingly, the control circuit can cause the ETIC to provide one or more of the multiple modulated voltages to each of the quadrature power amplifier circuits involved in the multi-transmission scheme. In this regard, the multi-transmission power management circuit can be flexibly configured to support different multi-transmission schemes.

Embodiments are described herein for power generation systems and methods that use quadrature splitters and combiners to facilitate plasma stability and control. For one embodiment, a quadrature splitter receives an input signal and generates a first and second signals as outputs with the second signal being ninety degrees out of phase with respect to the first signal. Two amplifiers then generate a first and second amplified signals. A quadrature combiner receives the first and second amplified signals and generates a combined amplified signal that represents re-aligned versions of the first and second amplified signals. The power amplifiers can be combined into a system to generate a high power output to a processing chamber. Further, detectors can generate measurements used to monitor and control power generation. The power amplifiers, system, and methods provide significant advantages for high-power generation delivered to process chambers for plasma generation during plasma processing.

A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.

A power splitter that amplifies an input radio-frequency (RF) signal. The power splitter uses a single transistor in a common emitter stage of a cascode amplifier and two or more common base stages of the cascode amplifier to amplify and to split the input RF signal. A common base biasing signal can be used to simultaneously enable two or more of the common base stages to generate two or more amplified RF output signals.

A high frequency circuit includes a transmit terminal and a transmit and receive terminal, a power amplifier that amplifies a high frequency signal inputted from the transmit terminal and outputs the high frequency signal toward the transmit and receive terminal, and an output matching circuit that is positioned on a signal path connecting the power amplifier and the transmit and receive terminal and that optimizes the output load impedance of the power amplifier. The output matching circuit includes a matching circuit coupled to an output terminal of the power amplifier, another matching circuit, and a switch that changes a connection between the matching circuits. The power amplifier and the switch are formed at a single semiconductor IC. The matching circuits are formed outside the semiconductor IC.

A power generator includes a plurality of amplifier blocks and a combiner. Each of the amplifier blocks include one or more amplifiers, and the combiner combines modulated power signals output from the amplifier blocks to generate an RF power signal of a load. The amplifier blocks are controlled to outphase the modulated power signals based on a phase angle. Ones of the amplifier blocks may perform discrete modulation to generate a respective one of the modulated power signals. The discrete modulation includes selecting different combinations of the amplifiers in one or more of the amplifier blocks to change the RF power signal in discrete steps. In embodiments, the amplifiers may be radio frequency power amplifiers.

An attenuator arrangement comprising at least a first attenuation path configured to couple between a signal processing chain, SPC, and a measurement apparatus; said SPC comprising a first and second SPC terminal, said SPC configured to apply one or both of a gain and phase change on a signal passed between the SPC terminals; said measurement apparatus configured to measure one or both of the gain and the phase change applied by SPC by coupling to and receiving signals from said SPC terminals; wherein one of said first SPC terminal and said second SPC terminal is coupled to the measurement apparatus through said first attenuation path; and wherein the at least first attenuation path of the attenuator arrangement is configured to provide, selectively, for attenuation of the signal to the measurement apparatus to make the signal power of the signals from said SPC terminals more equal.