A circuit including an amplifier having an input and an output. The circuit also includes a current-to-voltage amplifier having an input. The circuit further includes a current mirror coupled between the output of the amplifier and the input of the current-to-voltage amplifier. The current mirror is configured to chop current flowing through the first current mirror.

The present disclosure relates to a power divider and a circuit including the same. The power divider may comprise: at least two branches; the at least two branches comprise a first branch coupled between a first port and a second port; and a second branch coupled between the first port and a third port; the first branch comprises a first transmission line for power dividing function coupled to the first port, and a first impedance matching structure coupled to the second port; and the second branch comprises a second transmission line for power dividing function coupled to the first port, and a second impedance matching structure coupled to the third port. According to embodiments of the present disclosure, lengths and/or even types of the transmission lines in the power divider may be reduced.

An electrically conductive sub-collector layer is provided in a surface layer portion of a substrate. A collector layer, a base layer, and an emitter layer are located within the sub-collector layer when viewed in plan. The collector layer is connected to the sub-collector layer. An emitter electrode and a base electrode are long in a first direction when viewed in plan. The emitter electrode overlaps the emitter layer. The base electrode and the emitter electrode are discretely located away from each other in a second direction orthogonal to the first direction. A collector electrode is located on one side in the second direction with respect to the emitter electrode and is not located on the other side when viewed in plan. A base line is connected to the base electrode in a manner so as to adjoin a portion other than longitudinal ends of the base electrode.

A noise detecting circuit including an amplifier circuit, a filtering circuit and a comparing circuit. The amplifier circuit is arranged to amplify an input signal and output an amplified signal, wherein the input signal is received from a circuit to be detected and indicates a noise level of the circuit to be detected. The filtering circuit is coupled to the amplifier circuit and arranged to filter the amplified signal and output a filtered signal. The comparing circuit is coupled to the filtering circuit and arranged to compare the filtered signal to a reference voltage and output an output signal indicating the noise level of the circuit to be detected.

Systems and methods are related to a distributed amplification. An amplification device can include cells including a first cell and a second cell and transmission lines including a first line and a second line. The first cell is coupled to the first line, and the second cell is coupled to the second line. The first line is configured to provide a first delay related to a delay between the first cell and the second cell. The device also includes a summer including a first input coupled to the first line and second input coupled to the second line. The summer is configured to provide an output signal.

A transistor device package includes a component assembly comprising an interconnect structure, a transistor die having a front surface including gate, drain, and source terminal on a first surface of the interconnect structure, and one or more passive electrical components electrically coupled to the gate, drain, and/or source terminal by the interconnect structure. A thermally conductive flange is attached to a back surface of the transistor die, which is opposite the front surface, by a conductive adhesive. Respective patterns of the conductive adhesive are provided on the first surface of the interconnect structure, and least one of the respective patterns of the conductive adhesive provides an input, output, or ground signal path for the transistor device package. Related fabrication methods are also discussed.

Embodiments are described herein for power generation systems and methods that use quadrature splitters and combiners to facilitate plasma stability and control. For one embodiment, a quadrature splitter receives an input signal and generates a first and second signals as outputs with the second signal being ninety degrees out of phase with respect to the first signal. Two amplifiers then generate a first and second amplified signals. A quadrature combiner receives the first and second amplified signals and generates a combined amplified signal that represents re-aligned versions of the first and second amplified signals. The power amplifiers can be combined into a system to generate a high power output to a processing chamber. Further, detectors can generate measurements used to monitor and control power generation. The power amplifiers, system, and methods provide significant advantages for high-power generation delivered to process chambers for plasma generation during plasma processing.

A load detection circuit includes a first detection part and a second detection part. The first detection part includes a first capacitor and a second capacitor, forms capacitive coupling with a signal transmission line connecting an output port of an RF amplifier and a load, and outputs a first signal. The second detection part includes a first inductor and a second inductor, forms inductive coupling with the signal transmission line, and outputs a second signal.

A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

An embodiment electronic device comprises at least two antennas for transmitting signals, and at least one transmission path, the transmission path including a first coupling stage including a power divider, variable-gain power amplifiers, and a second coupling stage including a power combiner. Each coupling stage includes two inputs and two outputs, the two inputs of the first coupling stage being configured to receive a power input signal. Each output of the first coupling stage is connected to a different input of the second coupling stage via the variable-gain power amplifiers, and each output of the second coupling stage is connected to a different antenna. A controller is configured to control the gains of the variable-gain power amplifiers according to the characteristics of the power input signal, the signals transmitted by the antennas, and the coupling stages.