In some embodiments, radio-frequency amplifiers can include a plurality of narrow band power amplifiers implemented. Each narrow band power amplifier can be configured to operate with a high voltage in an average power tracking mode and be capable of being coupled to an output filter associated with a respective individual frequency band. Each narrow band power amplifier can be sized smaller than a wide band power amplifier configured to operate with more than one of the frequency bands associated with the plurality of narrow band power amplifiers.

Solder bumps are placed in direct contact with the silicon substrate of an amplifier integrated circuit having a flip chip configuration. A plurality of amplifier transistor arrays generate waste heat that promotes thermal run away of the amplifier if not directed out of the integrated circuit. The waste heat flows through the thermally conductive silicon substrate and out the solder bump to a heat-sinking plane of an interposer connected to the amplifier integrated circuit via the solder bumps.

Disclosed herein are methods for use in operating signal amplifiers that provide impedance adjustments for different gain modes. The impedance adjustments are configured to result in a constant real impedance for an input signal at the amplifier. Some of the disclosed methods adjust impedance using switchable inductors to compensate for changes in impedance with changing gain modes. Some of the disclosed methods adjust a device size to compensate for changes in impedance with changing gain modes. By providing impedance adjustments, the amplifiers reduce losses and improve performance by improving impedance matching over a range of gain modes.

A high-frequency module (1) includes a first substrate (101), a second substrate (102) that faces the first substrate (101), a support (103) that supports the first substrate (101) and the second substrate (102), and a plurality of high-frequency circuit components arranged in internal space formed by the first substrate (101), the second substrate (102), and the support and on both of facing principal faces of the first substrate (101) and the second substrate (102), and the plurality of high-frequency circuit components include a power amplifier element that constitutes a power amplifier circuit (16).

Apparatus and methods for oscillation suppression of cascode power amplifiers are provided herein. In certain implementations, a power amplifier system includes a cascode power amplifier including a plurality of transconductance devices that operate in combination with a plurality of cascode devices to amplify a radio frequency input signal. The power amplifier system further includes a bias circuit that biases the plurality of cascode devices with two or more bias voltages that are decoupled from one another at radio frequency to thereby inhibit the cascode power amplifier from oscillating.

A PA module includes: a multilayer substrate having a ground pattern layer connected to a ground of a power source; amplifier transistors disposed on the multilayer substrate; a bypass capacitor having one end connected to the collector of the amplifier transistor; a first wiring line connecting the emitter of the amplifier transistor and the ground pattern layer to each other; a second wiring line connecting the emitter of the amplifier transistor and the ground pattern layer to each other; a third wiring line connecting the other end of the bypass capacitor and the ground pattern layer to each other; and a fourth wiring line formed between the amplifier transistor and the ground pattern layer and between the bypass capacitor and the ground pattern layer and connecting the first wiring line and the third wiring line to each other.

An RF power amplifier is described including a first amplifier and a second amplifier arranged in parallel between an RF power amplifier input and an RF power amplifier output. A phase adjuster adjusts the phase of a signal on at least one of the first amplifier signal path and the second amplifier signal path. A first impedance inverter has a first impedance inverter input coupled to an output of the second amplifier and a first impedance inverter output coupled to the RF power amplifier output. The RF power amplifier is configured to enable at least one of the first amplifier and the second amplifier dependent on an operation mode and the first impedance inverter is configured to modulate the load impedance of the second amplifier in response to the operation mode changing.

An amplification circuit includes a first group of amplifiers including N first amplifiers, a second group of amplifiers including K second amplifiers, a first terminal, a second terminal, and a third terminal. Each of the N first amplifiers and each of the K second amplifiers includes an output. The second group of amplifiers is divided into a first subassembly of amplifiers and a second subassembly of amplifiers. The first subassembly includes M second amplifiers of the second group. The second subassembly includes K-M remaining second amplifiers of the second group. The first terminal is coupled to each output of the N first amplifiers and to a first radio frequency output terminal. The second terminal is coupled to each output of the M second amplifiers. The third terminal is coupled to each output of the K-M second remaining amplifiers and to a second radio frequency output terminal.

A variable gain amplifier includes a first transistor group which is connected to an input terminal and an output terminal, and which amplifies a signal from the input terminal to output the amplified signal to the output terminal; a second transistor group connected to the input terminal; a third transistor group connected to the output terminal; and a controller configured to control the first transistor group, the second transistor group, and the third transistor group so that a total number of the number of transistors to be turned on in the first transistor group and the second transistor group is kept at a constant value, and total numbers of transistors to be turned on in the first transistor group and in the third transistor group are the same.

An RF power package includes a substrate having a metallized part and an insulating part, an RF power transistor die embedded in or attached to the substrate, the RF power transistor die having a die input terminal, a die output terminal, an input impedance and an output impedance, a package input terminal formed in the metallized part or attached to the insulating part of the substrate, a package output terminal formed in the metallized part or attached to the insulating part of the substrate, and a first plurality of planar tuning lines formed in the metallized part of the substrate and electrically connecting the die output terminal to the package output terminal. The first plurality of planar tuning lines is shaped so as to transform the output impedance at the die output terminal to a higher target level at the package output terminal.