A method and apparatus for decomposition of signals with varying envelope into offset components are disclosed here, that sample the time variant envelope of a single carrier (SC) or a multi-carrier (MC) band limited signal, quantizes the sampled value using N.sub.b quantization bits and decomposes the sample into N.sub.b in-phase and quadrature components that are combined in pairs and modulated to generate a set of N.sub.b offset signals. The pulse shape applied in each offset signal is selected according to the spectral mask needed for the signal and to minimize envelope fluctuations in each offset signal from the set of N.sub.b components.

Various embodiments disclose a method and a device including: an antenna, a switching regulator, communication chip including an amplifier and a linear regulator operably connected to the amplifier and the switching regulator, the communication chip configured to transmit a radio-frequency signal from the electronic device through the antenna, and control circuitry configured to control the communication chip such that the linear regulator provides the amplifier with a voltage corresponding to an envelope of an input signal input to the amplifier, the input signal corresponding to the radio-frequency signal.

Various embodiments of the present technology may provide methods and apparatus for an amplifier integrated circuit. The amplifier integrated circuit may provide two amplifiers, one amplifier set to a low gain bandwidth product to amplify at a higher speed and the other amplifier set to a high gain bandwidth product to amplify at a lower speed. The amplifier integrated circuit may further provide a switching circuit connected to the amplifiers, wherein the switching circuit is responsive to a control signal and operates to selectively activate the high speed amplifier and the low speed amplifier in sequence.

A balancing circuit which may compensate for bandwidth attenuation introduced by interference between signals includes an amplifying circuit, a rising edge detection circuit and/or a falling edge detection circuit. By means of detecting the rising/falling edge of an original signal, the resulting pulse signal contains the phase information of a single 0 bit and a single 1 bit in the original signal, thus the phase of a rising edge or the phase of a falling edge of the original signal may be compensated respectively, so as to compensate for the high-frequency attenuation caused by interference between signals.

A multi-mode envelope tracking (ET) amplifier circuit is provided. The multi-mode ET amplifier circuit can operate in a low-resource block (RB) mode, a mid-RB mode, and a high-RB mode. The multi-mode ET amplifier circuit includes fast switcher circuitry having a first switcher path and a second switcher path and configured to generate an alternating current (AC) current. A control circuit activates the fast switcher circuitry in the mid-RB mode and the high-RB mode, while deactivating the fast switcher circuitry in the low-RB mode. More specifically, the control circuit selectively activates one of the first switcher path and the second switcher path in the mid-RB mode and activates both the first switcher path and the second switcher path in the high-RB mode. As a result, it is possible to improve efficiency of ET tracker circuitry and the multi-mode ET amplifier circuit in all operation modes.

An amplification unit contains two or more sets containing a plurality of amplification circuits, and amplifies power of an RF (Radio Frequency) signal. A combining unit contains two or more combiners corresponding to the two or more sets, combines RF signals output by the amplification circuits, and outputs a resultant RF signal. The amplification unit and the combining unit have two or more connectors which are arranged transversely. The amplification unit and the combining unit are attachable/detachable.

A power amplifier circuit includes a first transistor amplifying a first signal; a second transistor amplifying a second signal; a bias circuit supplying a bias current or voltage to a base or gate of the second transistor; and an attenuator attenuating the first or second signal in accordance with a control voltage supplied from the bias circuit. The attenuator includes a first diode to which the control voltage is supplied, a third transistor including a collector connected to a supply path of the first or second signal, an emitter connected to a ground, and a base to which the control voltage is supplied from the first diode, and a capacitor connected in parallel with the first diode. The control voltage decreases as a second signal power level increases. The third transistor allows part of the first or second signal to pass to the emitter in accordance with the control voltage.

A signal responding method includes: receiving a carrier signal with a frequency of 125 KHz via an antenna with a resonance frequency of 13.56 MHz; amplifying the carrier signal and performing analog-to-digital conversion on the amplified carrier signal to obtain a digital signal; acquiring, according to the digital signal, a signal characteristic of the carrier signal which comprises at least a frequency and a phase; and encoding response data at the frequency of the carrier signal to obtain an encoded signal, determining an initial phase to output the encoded signal based on the phase of the carrier signal, and outputting the encoded signal via the antenna, such that the encoded signal and the carrier signal are superposed at a same phase.

A receiver circuit is disclosed. The receiver circuit includes an amplifier configured to generate an RF signal based on a received signal, where the RF signal includes an information signal and a blocker signal modulating an RF carrier frequency. The receiver circuit also includes an RF filter connected to the amplifier, where the RF filter is configured to selectively attenuate the blocker signal.

In some embodiments, a wireless local area network (WLAN) front-end can be implemented on a semiconductor die having a semiconductor substrate, and a power amplifier implemented on the semiconductor substrate and configured for WLAN transmit operation associated with a frequency range. The semiconductor die can further include a low-noise amplifier (LNA) implemented on the semiconductor substrate and configured for WLAN receive operation associated with the frequency range. The semiconductor die can further include a transmit/receive switch implemented on the semiconductor substrate and configured to support the transmit and receive operations.