Examples disclosed herein relate to a high gain active relay antenna system. The active relay antenna system comprises a first antenna pair having a first receive antenna and a first transmit antenna to communicate wireless signals in a forward link from a base station to a plurality of users; and a second antenna pair having a second receive antenna and a second transmit antenna to communicate wireless signals in a return link from the plurality of users to the base station. The active relay antenna system further comprises a first active relay section and a second active relay section to provide for adjustable power gain in the wireless signals.

Examples disclosed herein relate to a high gain active relay antenna system. The active relay antenna system comprises a first antenna pair having a first receive antenna and a first transmit antenna to communicate wireless signals in a forward link from a base station to a plurality of users; and a second antenna pair having a second receive antenna and a second transmit antenna to communicate wireless signals in a return link from the plurality of users to the base station. The active relay antenna system further comprises a first active relay section and a second active relay section to provide for adjustable power gain in the wireless signals.

A multimode power amplifier module, a chip and a communication terminal. In the module, a control circuit (104) sends a bias signal to a low-frequency power amplifier (102) or a high-frequency power amplifier (106) according to a baseband signal, so as to control the amplification of an accessed low-frequency radio frequency signal or a high-frequency radio frequency signal by the low-frequency power amplifier (102) or the high-frequency power amplifier (106); and a transceiving switch (108) selects a corresponding operation mode to conduct transmission or receiving according to an operation mode selection signal. A power amplification path is reused according to different modes, so that the power amplification path can be shared by different operation modes of a high and low frequency band with the adjustment of the control circuit (104), thus simplifying the complexity in designing the power amplifier module, and reducing the cost of relevant design implementation.

A multimode power amplifier module, a chip and a communication terminal. In the module, a control circuit (104) sends a bias signal to a low-frequency power amplifier (102) or a high-frequency power amplifier (106) according to a baseband signal, so as to control the amplification of an accessed low-frequency radio frequency signal or a high-frequency radio frequency signal by the low-frequency power amplifier (102) or the high-frequency power amplifier (106); and a transceiving switch (108) selects a corresponding operation mode to conduct transmission or receiving according to an operation mode selection signal. A power amplification path is reused according to different modes, so that the power amplification path can be shared by different operation modes of a high and low frequency band with the adjustment of the control circuit (104), thus simplifying the complexity in designing the power amplifier module, and reducing the cost of relevant design implementation.

An amplifier includes a semiconductor substrate. A first conductive feature partially covers the bottom substrate surface to define a conductor-less region of the bottom substrate surface. A first current conducting terminal of a transistor is electrically coupled to the first conductive feature. Second and third conductive features may be coupled to other regions of the bottom substrate surface. A first filter circuit includes an inductor formed over a portion of the top substrate surface that is directly opposite the conductor-less region. The first filter circuit may be electrically coupled between a second current conducting terminal of the transistor and the second conductive feature. A second filter circuit may be electrically coupled between a control terminal of the transistor and the third conductive feature. Conductive leads may be coupled to the second and third conductive features, or the second and third conductive features may be coupled to a printed circuit board.

An amplifier includes a semiconductor substrate. A first conductive feature partially covers the bottom substrate surface to define a conductor-less region of the bottom substrate surface. A first current conducting terminal of a transistor is electrically coupled to the first conductive feature. Second and third conductive features may be coupled to other regions of the bottom substrate surface. A first filter circuit includes an inductor formed over a portion of the top substrate surface that is directly opposite the conductor-less region. The first filter circuit may be electrically coupled between a second current conducting terminal of the transistor and the second conductive feature. A second filter circuit may be electrically coupled between a control terminal of the transistor and the third conductive feature. Conductive leads may be coupled to the second and third conductive features, or the second and third conductive features may be coupled to a printed circuit board.

A power amplifier module includes an amplifier that amplifies an input signal and outputs an amplified signal, an emitter follower transistor that supplies a bias signal to the amplifier to control a bias point of the amplifier, and a current source that supplies a control current which changes in accordance with a change in control voltage to a collector of the emitter follower transistor. The current source limits the control current to not greater than an upper limit.

A power amplifier module includes an amplifier that amplifies an input signal and outputs an amplified signal, an emitter follower transistor that supplies a bias signal to the amplifier to control a bias point of the amplifier, and a current source that supplies a control current which changes in accordance with a change in control voltage to a collector of the emitter follower transistor. The current source limits the control current to not greater than an upper limit.

A semiconductor device includes the following elements. A chip has a main surface substantially parallel with a plane defined by first and second directions intersecting with each other. A power amplifier amplifies an input signal and outputs an amplified signal from plural output terminals. First and second filter circuits attenuate harmonics of the amplified signal. The first filter circuit includes a first capacitor connected between the plural output terminals and a ground. The second filter circuit includes a second capacitor connected between the plural output terminals and a ground. On the main surface of the chip, the plural output terminals are disposed side by side in the first direction, and the first capacitor is disposed on a side in the first direction with respect to the plural output terminals, while the second capacitor is disposed on a side opposite the first direction with respect to the plural output terminals.

A semiconductor device includes the following elements. A chip has a main surface substantially parallel with a plane defined by first and second directions intersecting with each other. A power amplifier amplifies an input signal and outputs an amplified signal from plural output terminals. First and second filter circuits attenuate harmonics of the amplified signal. The first filter circuit includes a first capacitor connected between the plural output terminals and a ground. The second filter circuit includes a second capacitor connected between the plural output terminals and a ground. On the main surface of the chip, the plural output terminals are disposed side by side in the first direction, and the first capacitor is disposed on a side in the first direction with respect to the plural output terminals, while the second capacitor is disposed on a side opposite the first direction with respect to the plural output terminals.